STMicroelectronics STW16N65M5
- Part Number:
- STW16N65M5
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488143-STW16N65M5
- Description:
- MOSFET N-CH 650V 12A TO-247
- Datasheet:
- STx16N65M5
STMicroelectronics STW16N65M5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW16N65M5.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- SeriesMDmesh™ V
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Resistance279MOhm
- Terminal FinishTin (Sn)
- Additional FeatureULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTW16N
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Power Dissipation-Max90W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation90W
- Turn On Delay Time25 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs279m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1250pF @ 100V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
- Rise Time7ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time6 ns
- Continuous Drain Current (ID)12A
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage650V
- Pulsed Drain Current-Max (IDM)48A
- Avalanche Energy Rating (Eas)200 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STW16N65M5 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1250pF @ 100V.This device has a continuous drain current (ID) of [12A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=650V, the drain-source breakdown voltage is 650V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 6 ns.A maximum pulsed drain current of 48A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STW16N65M5 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 6 ns
based on its rated peak drain current 48A.
STW16N65M5 Applications
There are a lot of STMicroelectronics
STW16N65M5 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1250pF @ 100V.This device has a continuous drain current (ID) of [12A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=650V, the drain-source breakdown voltage is 650V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 6 ns.A maximum pulsed drain current of 48A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STW16N65M5 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 6 ns
based on its rated peak drain current 48A.
STW16N65M5 Applications
There are a lot of STMicroelectronics
STW16N65M5 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STW16N65M5 More Descriptions
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-247
Trans MOSFET N-CH 650V 12A 3-Pin(3 Tab) TO-247 Tube
MOSFET MDmesh V 650V 12A 710V VDSS <0.299 Ohm
Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Trans MOSFET N-CH 650V 12A 3-Pin(3 Tab) TO-247 Tube
MOSFET MDmesh V 650V 12A 710V VDSS <0.299 Ohm
Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
The three parts on the right have similar specifications to STW16N65M5.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyBase Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusLifecycle StatusContact PlatingNumber of PinsECCN CodeTerminal PositionThreshold VoltageHeightLengthWidthREACH SVHCVoltage - Rated DCCurrent RatingDrain-source On Resistance-MaxView Compare
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STW16N65M5Through HoleThrough HoleTO-247-3SILICON150°C TJTubeMDmesh™ Ve3yesObsolete1 (Unlimited)3279MOhmTin (Sn)ULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)STW16N3R-PSFM-T3190W TcSingleENHANCEMENT MODE90W25 nsN-ChannelSWITCHING279m Ω @ 6A, 10V5V @ 250μA1250pF @ 100V12A Tc31nC @ 10V7ns10V±25V8 ns6 ns12A25V650V48A200 mJNoROHS3 CompliantLead Free------------------
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Through HoleThrough HoleTO-247-3SILICON150°C TJTubeMDmesh™ IIe3-Obsolete1 (Unlimited)3380mOhmTin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)STW14N3R-PSFM-T31125W TcSingleENHANCEMENT MODE125W-N-ChannelSWITCHING380m Ω @ 6A, 10V4V @ 250μA1300pF @ 50V12A Tc45nC @ 10V13ns10V±25V20 ns55 ns12A25V650V48A300 mJ-ROHS3 CompliantLead FreeNOT SPECIFIEDnot_compliantNOT SPECIFIEDNot Qualified-------------
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Through HoleThrough HoleTO-247-3SILICON150°C TJTubeMDmesh™ IIe3-Active1 (Unlimited)3250mOhm--FET General Purpose PowerMOSFET (Metal Oxide)STW19N3-1110W TcDualENHANCEMENT MODE110W12 nsN-ChannelSWITCHING250m Ω @ 7A, 10V4V @ 250μA1000pF @ 50V14A Tc34nC @ 10V16ns10V±25V17 ns61 ns14A25V500V56A208 mJNoROHS3 CompliantLead Free----NRND (Last Updated: 8 months ago)Tin3EAR99SINGLE3V20.15mm15.75mm5.15mmNo SVHC---
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Through HoleThrough HoleTO-247-3SILICON150°C TJTubeMDmesh™e3-Obsolete1 (Unlimited)3-Matte Tin (Sn)ULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)STW14N3R-PSFM-T31175W TcSingleENHANCEMENT MODE175W-N-ChannelSWITCHING350m Ω @ 6A, 10V5V @ 250μA1000pF @ 25V14A Tc38nC @ 10V10ns10V±30V8 ns19 ns14A30V500V56A400 mJ-ROHS3 CompliantLead FreeNOT APPLICABLEnot_compliantNOT APPLICABLENot Qualified---EAR99------550V14A0.35Ohm
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