STMicroelectronics STW12NM60N
- Part Number:
- STW12NM60N
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488059-STW12NM60N
- Description:
- MOSFET N-CH 600V 10A TO-247
- Datasheet:
- STx12NM60N(-1)
STMicroelectronics STW12NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW12NM60N.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™
- JESD-609 Codee3/e1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance410mOhm
- Terminal FinishMATTE TIN/TIN SILVER COPPER
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTW12N
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Power Dissipation-Max90W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation90W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs410m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds960pF @ 50V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs30.5nC @ 10V
- Rise Time9ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time60 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)40A
- Avalanche Energy Rating (Eas)200 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STW12NM60N Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 960pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STW12NM60N Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 40A.
STW12NM60N Applications
There are a lot of STMicroelectronics
STW12NM60N applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 960pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STW12NM60N Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 40A.
STW12NM60N Applications
There are a lot of STMicroelectronics
STW12NM60N applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
STW12NM60N More Descriptions
N-channel 600V - 0.35Ohm - 10A - D2/I2PAK - TO-220/FP - TO-247
N-Channel 600 V 0.41 Ohm Flange Mount MDmesh Power MOSFET - TO-247
Power Field-Effect Transistor, 10A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N-Channel 600 V 0.41 Ohm Flange Mount MDmesh Power MOSFET - TO-247
Power Field-Effect Transistor, 10A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
The three parts on the right have similar specifications to STW12NM60N.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyBase Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLead FreeNumber of PinsReach Compliance CodeConfigurationDrain to Source Voltage (Vdss)Peak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusLifecycle StatusFactory Lead TimeVoltage - Rated DCCurrent RatingThreshold VoltageDrain Current-Max (Abs) (ID)HeightLengthWidthREACH SVHCView Compare
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STW12NM60NThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeMDmesh™e3/e1Obsolete1 (Unlimited)3EAR99410mOhmMATTE TIN/TIN SILVER COPPERFET General Purpose PowerMOSFET (Metal Oxide)STW12N3R-PSFM-T3190W TcSingleENHANCEMENT MODE90WDRAIN15 nsN-ChannelSWITCHING410m Ω @ 5A, 10V4V @ 250μA960pF @ 50V10A Tc30.5nC @ 10V9ns10V±25V10 ns60 ns10A25V600V40A200 mJNoROHS3 CompliantLead Free------------------
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Through HoleThrough HoleTO-247-3-150°C TJTubeSuperMESH™e3Obsolete1 (Unlimited)---Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STW12N---150W Tc-----N-Channel-640m Ω @ 5A, 10V4.5V @ 100μA1740pF @ 25V10A Tc59nC @ 10V-10V±30V--10A-----ROHS3 Compliant-3not_compliantSingle600V-------------
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Through HoleThrough HoleTO-247-3SILICON150°C TJTubeMDmesh™ IIe3Obsolete1 (Unlimited)3-380mOhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STW14N3R-PSFM-T31125W TcSingleENHANCEMENT MODE125W--N-ChannelSWITCHING380m Ω @ 6A, 10V4V @ 250μA1300pF @ 50V12A Tc45nC @ 10V13ns10V±25V20 ns55 ns12A25V650V48A300 mJ-ROHS3 CompliantLead Free-not_compliant--NOT SPECIFIEDNOT SPECIFIEDNot Qualified----------
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Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99900mOhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STW10N3-1160W TcSingleENHANCEMENT MODE160W-30 nsN-ChannelSWITCHING900m Ω @ 4.5A, 10V4.5V @ 100μA2180pF @ 25V9A Tc72nC @ 10V20ns10V±30V17 ns65 ns9A30V800V-290 mJNoROHS3 CompliantLead Free3------ACTIVE (Last Updated: 8 months ago)12 Weeks800V9A3.75V9A20.15mm15.75mm5.15mmNo SVHC
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