STMicroelectronics STW11NK100Z

Name: STW11NK100Z
Brand: STMicroelectronics
SKU: 2478487-STW11NK100Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW11NK100Z

Manufacturer:: STMicroelectronics

Ventron No:: 2478487-STW11NK100Z

Description:: MOSFET N-CH 1KV 8.3A TO-247

ECAD Model:

Datasheet:: STW11NK100Z

Specifications

STMicroelectronics STW11NK100Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW11NK100Z.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
9.071847g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
1.38Ohm
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED, HIGH VOLTAGE
Subcategory
FET General Purpose Power
Voltage - Rated DC
1kV
Technology
MOSFET (Metal Oxide)
Current Rating
8.3A
Base Part Number
STW11N
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
230W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
230W
Turn On Delay Time
27 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.38 Ω @ 4.15A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8.3A Tc
Gate Charge (Qg) (Max) @ Vgs
162nC @ 10V
Rise Time
18ns
Drain to Source Voltage (Vdss)
1000V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
55 ns
Turn-Off Delay Time
98 ns
Continuous Drain Current (ID)
8.3A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
9A
Drain to Source Breakdown Voltage
1kV
Avalanche Energy Rating (Eas)
550 mJ
Max Junction Temperature (Tj)
150°C
Height
24.45mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW11NK100Z Description
STW11NK100Z is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM configuration. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high voltage MOSFETs, including the groundbreaking MDmeshTM devices, is complemented by this series.

STW11NK100Z Features
Exceptional dv/dt capabilities Avalanche safety is guaranteed. Gate charge has been reduced. Intrinsically low capacitances Exceptional manufacturing consistency

STW11NK100Z Applications
Switching application

STW11NK100Z More Descriptions

N-CHANNEL 1000V - 1.1 Ohm - 8.3A TO-247 Zener-Protected SuperMESH™ PowerMOSFET
N-Channel 1 kV 1.38 Ohm Flange Mount SuperMESH MOSFET - TO-247
Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:8.3A; On Resistance Rds(On):1.38Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Msl:- Rohs Compliant: Yes
Power Field-Effect Transistor, 8.3A I(D), 1000V, 1.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Product Comparison

The three parts on the right have similar specifications to STW11NK100Z.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Configuration

Contact Plating

Terminal Position

Pulsed Drain Current-Max (IDM)

View Compare
STW11NK100Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-247-3

3

9.071847g

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

1.38Ohm

Tin (Sn)

AVALANCHE RATED, HIGH VOLTAGE

FET General Purpose Power

1kV

MOSFET (Metal Oxide)

8.3A

STW11N

3

1

1

230W Tc

Single

ENHANCEMENT MODE

230W

27 ns

N-Channel

SWITCHING

1.38 Ω @ 4.15A, 10V

4.5V @ 100μA

3500pF @ 25V

8.3A Tc

162nC @ 10V

18ns

1000V

10V

±30V

55 ns

98 ns

8.3A

3.75V

TO-247AC

30V

9A

1kV

550 mJ

150°C

24.45mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
STW12NK60Z

STMicroelectronics

-

-

Through Hole

Through Hole

TO-247-3

3

-

-

150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

-

-

-

Tin (Sn)

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STW12N

-

-

-

150W Tc

-

-

-

-

N-Channel

-

640m Ω @ 5A, 10V

4.5V @ 100μA

1740pF @ 25V

10A Tc

59nC @ 10V

-

600V

10V

±30V

-

-

10A

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

not_compliant

Single

-

-

-

STW11NK100Z vs STW12NK60Z
STW10NK80Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-247-3

3

-

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

900mOhm

Tin (Sn)

-

FET General Purpose Power

800V

MOSFET (Metal Oxide)

9A

STW10N

3

1

-

160W Tc

Single

ENHANCEMENT MODE

160W

30 ns

N-Channel

SWITCHING

900m Ω @ 4.5A, 10V

4.5V @ 100μA

2180pF @ 25V

9A Tc

72nC @ 10V

20ns

-

10V

±30V

17 ns

65 ns

9A

3.75V

-

30V

9A

800V

290 mJ

-

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

STW11NK100Z vs STW10NK80Z
STW19NM50N

STMicroelectronics

NRND (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-247-3

3

-

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

250mOhm

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STW19N

3

1

-

110W Tc

Dual

ENHANCEMENT MODE

110W

12 ns

N-Channel

SWITCHING

250m Ω @ 7A, 10V

4V @ 250μA

1000pF @ 50V

14A Tc

34nC @ 10V

16ns

-

10V

±25V

17 ns

61 ns

14A

3V

-

25V

-

500V

208 mJ

-

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

Tin

SINGLE

56A

STW11NK100Z vs STW19NM50N