STMicroelectronics STS6NF20V

Name: STS6NF20V
Brand: STMicroelectronics
SKU: 2481754-STS6NF20V
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STS6NF20V

Manufacturer:: STMicroelectronics

Ventron No:: 2481754-STS6NF20V

Description:: MOSFET N-CH 20V 6A 8SOIC

ECAD Model:

Datasheet:: STS6NF20V

Specifications

STMicroelectronics STS6NF20V technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS6NF20V.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e4
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STS6N
Pin Count
8
Number of Elements
1
Power Dissipation-Max
2.5W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
40m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
460pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6A Tc
Gate Charge (Qg) (Max) @ Vgs
11.5nC @ 4.5V
Rise Time
33ns
Drive Voltage (Max Rds On,Min Rds On)
1.95V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
6A
Threshold Voltage
600mV
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
6A
Drain-source On Resistance-Max
0.045Ohm
Drain to Source Breakdown Voltage
20V
Pulsed Drain Current-Max (IDM)
24A
Height
1.25mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STS6NF20V Description
With a voltage of 20V, the STS6NF20V is an N-channel Power MOSFET from STMicroelectronics. STMicroelectronics' STripFETTM technology, which is specifically intended to minimize input capacitance and gate charge, was used to build this Power MOSFET series. This qualifies the device for usage as the principal switch in modern high-efficiency isolated DC-DC converters for telecom and computer applications, as well as applications requiring low gate charge driving.

STS6NF20V Features
Ultra-low threshold gate drive
100% avalanche tested
Low gate charge

STS6NF20V Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

STS6NF20V More Descriptions

N-channel 20 V, 0.030 Ohm, 6 A, 2.7 V drive STripFET(TM) II Power MOSFET in SO-8 package
N Channel 20 V 40 mOhm SMT StripFET II Power MOSFET - SOIC-8
Trans MOSFET N-CH 20V 6A 8-Pin SO N T/R / MOSFET N-CH 20V 6A 8SOIC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on)
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Fall Time tf: 10ns; No. of Transistors: 1; On State Resistance @ Vgs = 4.5V: 40mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: (1 2 3)S,4G, (8 7 6 5)D; Pulse Current Idm: 24A; Rise Time: 33ns; Voltage Vds Typ: 20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: 2.7V

Certification