STMicroelectronics STP9NK60Z

Name: STP9NK60Z
Brand: STMicroelectronics
SKU: 2479352-STP9NK60Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP9NK60Z

Manufacturer:: STMicroelectronics

Ventron No:: 2479352-STP9NK60Z

Description:: MOSFET N-CH 600V 7A TO-220

ECAD Model:

Datasheet:: STP9NK60Z

Specifications

STMicroelectronics STP9NK60Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP9NK60Z.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
7A
Base Part Number
STP9N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
125W
Turn On Delay Time
19 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
950m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1110pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7A Tc
Gate Charge (Qg) (Max) @ Vgs
53nC @ 10V
Rise Time
17ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
3.5A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
7A
Drain-source On Resistance-Max
0.95Ohm
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
28A
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP9NK60Z Description
These are N-channel Zener-protected Power MOSFETs designed with STMicroelectronics' SuperMESHTM technology, which was obtained by optimizing ST's well-known strip-based PowerMESHTM layout. This device is designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.

STP9NK60Z Features
Extremely high dv/dt capability
Improved ESD capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances

STP9NK60Z Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

STP9NK60Z More Descriptions

N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
Trans MOSFET N-CH 600V 7A 3-Pin(3 Tab) TO-220AB Tube
N-channel 600 V 0.95 Ohm 125 W Through Hole SuperMESH Power Mosfet - TO-220
Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 7A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po

Product Comparison

The three parts on the right have similar specifications to STP9NK60Z.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Case Connection

Weight

Peak Reflow Temperature (Cel)

View Compare
STP9NK60Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

7A

STP9N

3

1

125W Tc

Single

ENHANCEMENT MODE

125W

19 ns

N-Channel

SWITCHING

950m Ω @ 3.5A, 10V

4.5V @ 100μA

1110pF @ 25V

7A Tc

53nC @ 10V

17ns

10V

±30V

15 ns

43 ns

3.5A

3.75V

TO-220AB

30V

7A

0.95Ohm

600V

28A

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-
STP9NM40N

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

-

150°C TJ

Tube

MDmesh™ II

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

STP9N

-

-

60W Tc

Single

-

-

7 ns

N-Channel

-

790m Ω @ 2.5A, 10V

4V @ 250μA

365pF @ 50V

5.6A Tc

14nC @ 10V

4.4ns

10V

±25V

8.8 ns

25 ns

5.6A

-

-

25V

-

-

400V

-

-

-

-

-

No

ROHS3 Compliant

-

-

-

-

STP9NK60Z vs STP9NM40N
STP9NK70ZFP

STMicroelectronics

ACTIVE (Last Updated: 2 weeks ago)

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP9N

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

22 ns

N-Channel

SWITCHING

1.2 Ω @ 4A, 10V

4.5V @ 100μA

1370pF @ 25V

7.5A Tc

68nC @ 10V

17ns

10V

±30V

13 ns

45 ns

4A

3.75V

TO-220AB

30V

7.5A

-

700V

-

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

ISOLATED

-

-

STP9NK60Z vs STP9NK70ZFP
STP9NK60ZFP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP9N

3

1

30W Tc

Single

ENHANCEMENT MODE

30W

19 ns

N-Channel

SWITCHING

950m Ω @ 3.5A, 10V

4.5V @ 100μA

1110pF @ 25V

7A Tc

53nC @ 10V

17ns

10V

±30V

15 ns

43 ns

7A

3.75V

TO-220AB

30V

7A

0.95Ohm

600V

28A

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

ISOLATED

4.535924g

245

STP9NK60Z vs STP9NK60ZFP