STMicroelectronics STP9NK50ZFP

Name: STP9NK50ZFP
Brand: STMicroelectronics
SKU: 2482896-STP9NK50ZFP
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP9NK50ZFP

Manufacturer:: STMicroelectronics

Ventron No:: 2482896-STP9NK50ZFP

Description:: MOSFET N-CH 500V 7.2A TO-220FP

ECAD Model:

Datasheet:: STP9NK50ZFP

Specifications

STMicroelectronics STP9NK50ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP9NK50ZFP.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
850MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP9N
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
30W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Case Connection
ISOLATED
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
850m Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
910pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.2A Tc
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
7.2A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
28.8A
Height
9.3mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP9NK50ZFP Description The SuperMESH? series is obtained through an extreme optimization of ST's well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including revolutionary MDmesh? products.

STP9NK50ZFP Features TYPICAL RDS(on) = 0.72 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATABILITY

STP9NK50ZFP Applications HIGH CURRENT, HIGH-SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING

STP9NK50ZFP More Descriptions

N-channel 500 V, 0.72 Ohm typ., 7.2 A SuperMESH Power MOSFET in TO-220FP packageCiiva Crawler
Trans MOSFET N-CH 500V 7.2A 3-Pin(3 Tab) TO-220FP Tube
MOSFET Operating temperature: -55...150 °C Housing type: TO-220FP Polarity: N Power dissipation: 30 W
N-Channel 500 V 0.85 Ohm Zener-Protected SuperMESH MOSFET
Mosfet, N Channel, 500V, 7.2A, To-220Fp-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:7.2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STP9NK50ZFP
Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP9NK50ZFP.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Terminal Finish

Additional Feature

Voltage - Rated DC

Current Rating

Drain Current-Max (Abs) (ID)

Avalanche Energy Rating (Eas)

Radiation Hardening

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
STP9NK50ZFP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Tin

Through Hole

Through Hole

TO-220-3 Full Pack

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

850MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP9N

3

Not Qualified

1

30W Tc

Single

ENHANCEMENT MODE

30W

ISOLATED

17 ns

N-Channel

SWITCHING

850m Ω @ 3.6A, 10V

4.5V @ 100μA

910pF @ 25V

7.2A Tc

32nC @ 10V

20ns

10V

±30V

22 ns

45 ns

7.2A

3.75V

TO-220AB

30V

500V

28.8A

9.3mm

10.4mm

4.6mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
STP9NK90Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

-

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

1.3Ohm

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

STP9N

3

-

1

160W Tc

Single

ENHANCEMENT MODE

160W

-

22 ns

N-Channel

SWITCHING

1.3 Ω @ 3.6A, 10V

4.5V @ 100μA

2115pF @ 25V

8A Tc

72nC @ 10V

13ns

10V

±30V

28 ns

55 ns

8A

3.75V

TO-220AB

30V

900V

-

15.75mm

10.4mm

4.6mm

No SVHC

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

AVALANCHE RATED

900V

8A

8A

220 mJ

No

-

-

-

STP9NK50ZFP vs STP9NK90Z
STP9NM60N

STMicroelectronics

NRND (Last Updated: 7 months ago)

-

-

Through Hole

Through Hole

TO-220-3

3

-

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

STP9N

3

-

1

70W Tc

Single

ENHANCEMENT MODE

70W

-

28 ns

N-Channel

SWITCHING

745m Ω @ 3.25A, 10V

4V @ 250μA

452pF @ 50V

6.5A Tc

17.4nC @ 10V

23ns

10V

±25V

26.7 ns

52.5 ns

6.5A

3V

TO-220AB

25V

-

26A

15.75mm

10.4mm

4.6mm

No SVHC

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

-

-

-

9A

-

No

600V

0.745Ohm

600V

STP9NK50ZFP vs STP9NM60N
STP9N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

Through Hole

Through Hole

TO-220-3

3

-

-

150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

-

EAR99

780mOhm

-

MOSFET (Metal Oxide)

-

-

STP9N

-

-

-

60W Tc

Single

-

60W

-

8.8 ns

N-Channel

-

780m Ω @ 3A, 10V

4V @ 250μA

320pF @ 100V

5.5A Tc

10nC @ 10V

7.5ns

10V

±25V

13.5 ns

22 ns

5.5A

-

-

25V

650V

-

15.75mm

10.4mm

4.6mm

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

No

600V

-

-

STP9NK50ZFP vs STP9N60M2