STMicroelectronics STP95N4F3
- Part Number:
- STP95N4F3
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2483669-STP95N4F3
- Description:
- MOSFET N-CH 40V 80A TO-220
- Datasheet:
- STP95N4F3
STMicroelectronics STP95N4F3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP95N4F3.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™ III
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP95
- Pin Count3
- Number of Elements1
- Power Dissipation-Max110W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation110W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.2m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)80A
- Threshold Voltage2V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0062Ohm
- Drain to Source Breakdown Voltage40V
- Avalanche Energy Rating (Eas)400 mJ
- Height15.75mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP95N4F3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STP95N4F3 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 40 ns
a threshold voltage of 2V
STP95N4F3 Applications
There are a lot of STMicroelectronics
STP95N4F3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STP95N4F3 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 40 ns
a threshold voltage of 2V
STP95N4F3 Applications
There are a lot of STMicroelectronics
STP95N4F3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
STP95N4F3 More Descriptions
Transistor MOSFET N-CH 40V 80A 3-Pin (3 Tab) TO-220 Tube
N-channel 40 V, 5.4 mOhm, 80 A, TO-220 STripFET(TM) III Power MOSFET
Mosfet, N Ch, 40V, 80A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Product Range:- Rohs Compliant: Yes |Stmicroelectronics STP95N4F3
Power Field-Effect Transistor, 80A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-channel 40 V, 5.4 mOhm, 80 A, TO-220 STripFET(TM) III Power MOSFET
Mosfet, N Ch, 40V, 80A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Product Range:- Rohs Compliant: Yes |Stmicroelectronics STP95N4F3
Power Field-Effect Transistor, 80A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP95N4F3.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeWeightResistanceAdditional FeatureVoltage - Rated DCCurrent RatingDrain Current-Max (Abs) (ID)Peak Reflow Temperature (Cel)Pulsed Drain Current-Max (IDM)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusView Compare
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STP95N4F3ACTIVE (Last Updated: 7 months ago)12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeSTripFET™ IIIe3Active1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP9531110W TcSingleENHANCEMENT MODE110WDRAIN15 nsN-ChannelSWITCHING6.2m Ω @ 40A, 10V4V @ 250μA2200pF @ 25V80A Tc54nC @ 10V50ns10V±20V15 ns40 ns80A2VTO-220AB20V0.0062Ohm40V400 mJ15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free-------------
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ACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP9N31160W TcSingleENHANCEMENT MODE160W-22 nsN-ChannelSWITCHING1.3 Ω @ 3.6A, 10V4.5V @ 100μA2115pF @ 25V8A Tc72nC @ 10V13ns10V±30V28 ns55 ns8A3.75VTO-220AB30V-900V220 mJ15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free4.535924g1.3OhmAVALANCHE RATED900V8A8A------
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ACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP9N3130W TcSingleENHANCEMENT MODE30WISOLATED19 nsN-ChannelSWITCHING950m Ω @ 3.5A, 10V4.5V @ 100μA1110pF @ 25V7A Tc53nC @ 10V17ns10V±30V15 ns43 ns7A3.75VTO-220AB30V0.95Ohm600V-16.4mm10.4mm4.6mmNo SVHCNoROHS3 Compliant-4.535924g----7A24528A----
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--Through HoleThrough HoleTO-220-3-SILICON-55°C~150°C TJTubeSuperFREDmesh™e3Obsolete1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP9N31125W TcSingleENHANCEMENT MODE125W--N-ChannelSWITCHING950m Ω @ 3.5A, 10V4.5V @ 100μA1110pF @ 25V7A Tc53nC @ 10V17ns10V±30V15 ns42 ns7A-TO-220AB30V0.95Ohm600V235 mJ-----ROHS3 CompliantLead Free---600V7A7ANOT SPECIFIED28Anot_compliantNOT SPECIFIEDR-PSFM-T3Not Qualified
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