STMicroelectronics STP80PF55

Name: STP80PF55
Brand: STMicroelectronics
SKU: 2478418-STP80PF55
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP80PF55

Manufacturer:: STMicroelectronics

Ventron No:: 2478418-STP80PF55

Description:: MOSFET P-CH 55V 80A TO-220

ECAD Model:

Datasheet:: STP80PF55

Specifications

STMicroelectronics STP80PF55 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80PF55.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
18mOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-55V
Technology
MOSFET (Metal Oxide)
Current Rating
-80A
Base Part Number
STP80P
Pin Count
3
Number of Elements
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Turn On Delay Time
35 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
18m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
258nC @ 10V
Rise Time
190ns
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±16V
Fall Time (Typ)
80 ns
Turn-Off Delay Time
165 ns
Continuous Drain Current (ID)
80A
Threshold Voltage
-3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
-55V
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP80PF55 Description
The STP80PF55 Power MOSFET is the latest advancement in STMicroelectronics' proprietary "single feature size" strip-based technique. The resulting transistor has extremely high packing density for low on-resistance, tough avalanche properties, and fewer essential alignment steps, allowing for exceptional manufacturing reproducibility.

STP80PF55 Features
100% avalanche tested
Application-oriented characterization
Extremely dv/dt capability

STP80PF55 Applications
Automotive and Industrial Areas

STP80PF55 More Descriptions

P-channel 55 V, 0.016 Ohm typ, 80 A STripFET(TM) II Power MOSFET in TO-220 package
Transistor STP80PF55 P-Channel MOSFET 55 Volt 80 Amp TO-220
P-channel 55 V 18 mOhm Flange Mount STripFET II Power MOSFET - TO-220
Trans MOSFET P-CH 55V 80A 3-Pin(3 Tab) TO-220AB Tube
P Channel Mosfet, -55V, -80A, To-220; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP80PF55
Power Field-Effect Transistor, 80A I(D), 55V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P, TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: -80A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: -80A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 2.54mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Pin Format: 1 g; 2 d/tab; 3 s; Voltage Vds Typ: -55V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: -10V

Product Comparison

The three parts on the right have similar specifications to STP80PF55.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Additional Feature

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lifecycle Status

Factory Lead Time

Number of Channels

Case Connection

View Compare
STP80PF55

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

18mOhm

Tin (Sn)

Other Transistors

-55V

MOSFET (Metal Oxide)

-80A

STP80P

3

1

300W Tc

Single

ENHANCEMENT MODE

300W

35 ns

P-Channel

SWITCHING

18m Ω @ 40A, 10V

4V @ 250μA

5500pF @ 25V

80A Tc

258nC @ 10V

190ns

55V

10V

±16V

80 ns

165 ns

80A

-3V

TO-220AB

16V

-55V

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP8NM60D

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Obsolete

3 (168 Hours)

3

-

-

TIN

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP8N

3

1

100W Tc

Single

ENHANCEMENT MODE

100W

-

N-Channel

SWITCHING

1 Ω @ 2.5A, 10V

5V @ 250μA

380pF @ 25V

8A Tc

18nC @ 10V

10ns

-

10V

±30V

8 ns

26 ns

8A

-

TO-220AB

30V

600V

-

-

-

-

-

ROHS3 Compliant

Lead Free

yes

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

8A

1Ohm

32A

200 mJ

-

-

-

-

STP80PF55 vs STP8NM60D
STP8NM60

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

-

SILICON

-55°C~150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

-

-

Matte Tin (Sn) - annealed

FET General Purpose Power

650V

MOSFET (Metal Oxide)

8A

STP8N

3

1

100W Tc

Single

ENHANCEMENT MODE

100W

14 ns

N-Channel

SWITCHING

1 Ω @ 2.5A, 10V

5V @ 250μA

400pF @ 25V

8A Tc

18nC @ 10V

10ns

-

10V

±30V

10 ns

23 ns

8A

-

TO-220AB

30V

600V

-

-

-

-

No

ROHS3 Compliant

Lead Free

yes

-

-

-

-

-

8A

1Ohm

-

200 mJ

-

-

-

-

STP80PF55 vs STP8NM60
STP80N10F7

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

329.988449mg

SILICON

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VII

-

Active

1 (Unlimited)

3

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

STP80N

-

2

110W Tc

Single

ENHANCEMENT MODE

110W

19 ns

N-Channel

SWITCHING

10m Ω @ 40A, 10V

4.5V @ 250μA

3100pF @ 50V

80A Tc

45nC @ 10V

32ns

-

10V

±20V

13 ns

36 ns

80A

-

-

20V

100V

4.6mm

10.4mm

15.75mm

-

-

ROHS3 Compliant

Lead Free

-

ULTRA LOW-ON RESISTANCE

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

13 Weeks

1

DRAIN

STP80PF55 vs STP80N10F7