STMicroelectronics STP80NF55

Name: STP80NF55
Brand: STMicroelectronics
SKU: 2849881-STP80NF55
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP80NF55

Manufacturer:: STMicroelectronics

Ventron No:: 2849881-STP80NF55

Description:: MOSFET N-CH 55V 80A TO220

ECAD Model:

Datasheet:: STP80NF55

Specifications

STMicroelectronics STP80NF55 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80NF55.

Factory Lead Time
12 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP80N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
80A
Drain-source On Resistance-Max
0.0065Ohm
Pulsed Drain Current-Max (IDM)
320A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
1300 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
210W
RoHS Status
ROHS3 Compliant

Description

STP80NF55 Description STP80NF55 is a 55V N-Channel STripFETTM II Power MOSFET developed using a unique strip-based process known as "single feature size"TM. It is also noteworthy that the transistor that was produced has extremely high packing density for low resistance, rugged avalanche characteristics, and less critical alignment steps, providing a remarkable level of manufacturing reproducibility. To address the challenging efficiency requirements of today, we have improved gate charges and reduced power dissipation.
STP80NF55 Features 100% avalanche tested
Switching application
Exceptional dv/dt capability
Application-oriented characterization
STP80NF55 Applications Industrial
Low power DC-to-DC converters
Load switching
Battery management
Battery-powered portable equipment

STP80NF55 More Descriptions

Mosfet, N-Ch, 55V, 80A, To-220 Rohs Compliant: Yes |Stmicroelectronics STP80NF55
IC OPAMP GP 700KHZ 8VSSOP
OEMs, CMs ONLY (NO BROKERS)
MOSFET POWER MOSFET
FETs - Single

Product Comparison

The three parts on the right have similar specifications to STP80NF55.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

Power Dissipation-Max (Abs)

RoHS Status

Mount

Operating Temperature

Series

Pbfree Code

Additional Feature

Technology

Power Dissipation-Max

Element Configuration

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

Lifecycle Status

Drain to Source Voltage (Vdss)

Number of Pins

Weight

Resistance

Voltage - Rated DC

Current Rating

Turn On Delay Time

Threshold Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
STP80NF55

STMicroelectronics

12 Weeks

Through Hole

TO-220-3

NO

SILICON

Tube

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

SINGLE

NOT SPECIFIED

not_compliant

NOT SPECIFIED

STP80N

3

R-PSFM-T3

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

TO-220AB

80A

0.0065Ohm

320A

55V

1300 mJ

METAL-OXIDE SEMICONDUCTOR

210W

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP8NM60D

STMicroelectronics

-

Through Hole

TO-220-3

-

SILICON

Tube

e3

Obsolete

3 (168 Hours)

3

-

TIN

FET General Purpose Power

-

NOT SPECIFIED

-

NOT SPECIFIED

STP8N

3

R-PSFM-T3

Not Qualified

-

1

-

ENHANCEMENT MODE

-

SWITCHING

-

TO-220AB

8A

1Ohm

32A

-

200 mJ

-

-

ROHS3 Compliant

Through Hole

-65°C~150°C TJ

MDmesh™

yes

AVALANCHE RATED

MOSFET (Metal Oxide)

100W Tc

Single

100W

N-Channel

1 Ω @ 2.5A, 10V

5V @ 250μA

380pF @ 25V

8A Tc

18nC @ 10V

10ns

10V

±30V

8 ns

26 ns

8A

30V

600V

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP80NF55 vs STP8NM60D
STP80NF55-08AG

STMicroelectronics

12 Weeks

Through Hole

TO-220-3

-

-

Tube

-

Active

1 (Unlimited)

-

-

-

-

-

NOT SPECIFIED

-

NOT SPECIFIED

STP80N

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-55°C~175°C TJ

Automotive, AEC-Q101, STripFET™

-

-

MOSFET (Metal Oxide)

300W Tc

-

-

N-Channel

8m Ω @ 40A, 10V

4V @ 250μA

3740pF @ 15V

80A Tc

112nC @ 10V

-

10V

±20V

-

-

-

-

-

-

ACTIVE (Last Updated: 7 months ago)

55V

-

-

-

-

-

-

-

-

-

-

-

-

STP80NF55 vs STP80NF55-08AG
STP85NF55

STMicroelectronics

12 Weeks

Through Hole

TO-220-3

-

SILICON

Tube

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

-

-

-

-

STP85N

3

-

-

-

1

-

ENHANCEMENT MODE

DRAIN

SWITCHING

-

TO-220AB

-

-

-

-

980 mJ

-

-

ROHS3 Compliant

Through Hole

-55°C~175°C TJ

STripFET™ II

-

-

MOSFET (Metal Oxide)

300W Tc

Single

300W

N-Channel

8m Ω @ 40A, 10V

4V @ 250μA

3700pF @ 25V

80A Tc

150nC @ 10V

100ns

10V

±20V

35 ns

70 ns

80A

20V

55V

Lead Free

ACTIVE (Last Updated: 8 months ago)

-

3

9.071847g

8mOhm

55V

80A

25 ns

3V

6.35mm

38.1mm

12.7mm

No SVHC

No

STP80NF55 vs STP85NF55