STMicroelectronics STP80NF55-08AG
- Part Number:
- STP80NF55-08AG
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2850005-STP80NF55-08AG
- Description:
- MOSFET N-CH 55V 80A TO220
- ECAD Model:
-
- Datasheet:
- STP80NF55-08AG
STMicroelectronics STP80NF55-08AG technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80NF55-08AG.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesAutomotive, AEC-Q101, STripFET™
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTP80N
- Power Dissipation-Max300W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3740pF @ 15V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs112nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
STP80NF55-08AG Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3740pF @ 15V.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STP80NF55-08AG Features
a 55V drain to source voltage (Vdss)
STP80NF55-08AG Applications
There are a lot of STMicroelectronics
STP80NF55-08AG applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3740pF @ 15V.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STP80NF55-08AG Features
a 55V drain to source voltage (Vdss)
STP80NF55-08AG Applications
There are a lot of STMicroelectronics
STP80NF55-08AG applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
STP80NF55-08AG More Descriptions
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3 Tab) TO-220AB Tube
Mosfet, Aec-Q101, N-Ch, 55V, 80A, 300W Rohs Compliant: Yes |Stmicroelectronics STP80NF55-08AG
Automotive-grade N-channel 55 V, 6.5 mOhm typ., 80 A STripFET Power MOSFET in a TO-220 packageCiiva Crawler
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, Aec-Q101, N-Ch, 55V, 80A, 300W Rohs Compliant: Yes |Stmicroelectronics STP80NF55-08AG
Automotive-grade N-channel 55 V, 6.5 mOhm typ., 80 A STripFET Power MOSFET in a TO-220 packageCiiva Crawler
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP80NF55-08AG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsECCN CodeResistanceSubcategoryNumber of ChannelsElement ConfigurationContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningLead FreeTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishAdditional FeaturePin CountJESD-30 CodeNumber of ElementsOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeJEDEC-95 CodePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Pbfree CodeVoltage - Rated DCCurrent RatingDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxView Compare
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STP80NF55-08AGACTIVE (Last Updated: 7 months ago)12 WeeksThrough HoleTO-220-3-55°C~175°C TJTubeAutomotive, AEC-Q101, STripFET™Active1 (Unlimited)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTP80N300W TcN-Channel8m Ω @ 40A, 10V4V @ 250μA3740pF @ 15V80A Tc112nC @ 10V55V10V±20VROHS3 Compliant---------------------------------------- -
ACTIVE (Last Updated: 8 months ago)-Through HoleTO-220-3-55°C~175°C TJTubeAutomotive, AEC-Q101, DeepGATE™, STripFET™ VIObsolete1 (Unlimited)MOSFET (Metal Oxide)--STP80N120W TcN-Channel5.8m Ω @ 50A, 10V4.5V @ 250μA7480pF @ 25V110A Tc122nC @ 10V-10V±20VROHS3 CompliantThrough Hole3EAR995mOhmFET General Purpose Powers1Single110A20V60V15.75mm10.4mm4.6mmNoLead Free------------------------
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-38 WeeksThrough HoleTO-220-3-55°C~175°C TJTubeSTripFET™ IIActiveNot ApplicableMOSFET (Metal Oxide)--STP85N300W TcN-Channel8m Ω @ 40A, 10V2.5V @ 250μA4050pF @ 25V80A Tc110nC @ 5V-5V 10V±15VROHS3 CompliantThrough Hole-EAR998mOhmFET General Purpose Power-Single80A15V55V---NoLead FreeSILICONe33Matte Tin (Sn)LOGIC LEVEL COMPATIBLE3R-PSFM-T31ENHANCEMENT MODE300WDRAIN35 nsSWITCHING165ns55 ns70 nsTO-220AB320A980 mJ-----
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--Through HoleTO-220-3-55°C~150°C TJTubeMDmesh™Obsolete1 (Unlimited)MOSFET (Metal Oxide)--STP8N100W TcN-Channel1 Ω @ 2.5A, 10V5V @ 250μA400pF @ 25V8A Tc18nC @ 10V-10V±30VROHS3 CompliantThrough Hole3--FET General Purpose Power-Single8A30V600V---NoLead FreeSILICONe33Matte Tin (Sn) - annealed-3-1ENHANCEMENT MODE100W-14 nsSWITCHING10ns10 ns23 nsTO-220AB-200 mJyes650V8A8A1Ohm
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