STMicroelectronics STP80N70F6

Name: STP80N70F6
Brand: STMicroelectronics
SKU: 2483660-STP80N70F6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP80N70F6

Manufacturer:: STMicroelectronics

Ventron No:: 2483660-STP80N70F6

Description:: MOSFET N CH 68V 96A TO-220

ECAD Model:

Datasheet:: STP80N70F6

Specifications

STMicroelectronics STP80N70F6 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80N70F6.

Factory Lead Time
42 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
DeepGATE™, STripFET™ VI
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Base Part Number
STP80N
Number of Elements
1
Configuration
Single
Power Dissipation-Max
110W Tc
Power Dissipation
110W
Turn On Delay Time
23 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
8m Ω @ 48A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5850pF @ 25V
Current - Continuous Drain (Id) @ 25°C
96A Tc
Gate Charge (Qg) (Max) @ Vgs
99nC @ 10V
Rise Time
29ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
23 ns
Turn-Off Delay Time
102 ns
Continuous Drain Current (ID)
96A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
68V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP80N70F6 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5850pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 96A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=68V. And this device has 68V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 102 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 23 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STP80N70F6 Features
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 68V voltage
the turn-off delay time is 102 ns

STP80N70F6 Applications
There are a lot of STMicroelectronics
STP80N70F6 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

STP80N70F6 More Descriptions

N-channel 68 V, 0.0052 Ohm, 96 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
Power Field-Effect Transistor, 96A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel 68 V 0.008 Ohm Flange Mount Mosfet - TO-220-3
Trans MOSFET N-CH 68V 96A 3-Pin(3 Tab) TO-220 Tube

Product Comparison

The three parts on the right have similar specifications to STP80N70F6.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Subcategory

Technology

Base Part Number

Number of Elements

Configuration

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

JESD-609 Code

Number of Terminations

Resistance

Terminal Finish

Additional Feature

Pin Count

JESD-30 Code

Element Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Operating Temperature (Max)

Polarity/Channel Type

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

FET Technology

Power Dissipation-Max (Abs)

Lifecycle Status

Number of Pins

Weight

Number of Channels

Height

Length

Width

View Compare
STP80N70F6

STMicroelectronics

42 Weeks

Through Hole

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VI

Active

1 (Unlimited)

EAR99

FET General Purpose Powers

MOSFET (Metal Oxide)

STP80N

1

Single

110W Tc

110W

23 ns

N-Channel

8m Ω @ 48A, 10V

4V @ 250μA

5850pF @ 25V

96A Tc

99nC @ 10V

29ns

10V

±20V

23 ns

102 ns

96A

20V

68V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP85NF55L

STMicroelectronics

38 Weeks

Through Hole

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

STripFET™ II

Active

Not Applicable

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STP85N

1

-

300W Tc

300W

35 ns

N-Channel

8m Ω @ 40A, 10V

2.5V @ 250μA

4050pF @ 25V

80A Tc

110nC @ 5V

165ns

5V 10V

±15V

55 ns

70 ns

80A

15V

55V

No

ROHS3 Compliant

Lead Free

SILICON

e3

3

8mOhm

Matte Tin (Sn)

LOGIC LEVEL COMPATIBLE

3

R-PSFM-T3

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-220AB

320A

980 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP80N70F6 vs STP85NF55L
STP80NF55

STMicroelectronics

12 Weeks

-

Through Hole

TO-220-3

-

Tube

-

Active

1 (Unlimited)

EAR99

FET General Purpose Power

-

STP80N

1

SINGLE WITH BUILT-IN DIODE

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

SILICON

e3

3

-

Matte Tin (Sn)

-

3

R-PSFM-T3

-

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-220AB

320A

1300 mJ

NO

SINGLE

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

175°C

N-CHANNEL

80A

0.0065Ohm

55V

METAL-OXIDE SEMICONDUCTOR

210W

-

-

-

-

-

-

-

STP80N70F6 vs STP80NF55
STP80N10F7

STMicroelectronics

13 Weeks

Through Hole

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VII

Active

1 (Unlimited)

EAR99

-

MOSFET (Metal Oxide)

STP80N

2

-

110W Tc

110W

19 ns

N-Channel

10m Ω @ 40A, 10V

4.5V @ 250μA

3100pF @ 50V

80A Tc

45nC @ 10V

32ns

10V

±20V

13 ns

36 ns

80A

20V

100V

-

ROHS3 Compliant

Lead Free

SILICON

-

3

-

-

ULTRA LOW-ON RESISTANCE

-

-

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

3

329.988449mg

1

4.6mm

10.4mm

15.75mm

STP80N70F6 vs STP80N10F7