STMicroelectronics STP60NE06-16

Name: STP60NE06-16
Brand: STMicroelectronics
SKU: 2851567-STP60NE06-16
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP60NE06-16

Manufacturer:: STMicroelectronics

Ventron No:: 2851567-STP60NE06-16

Description:: MOSFET N-CH 60V 60A TO-220

ECAD Model:

Datasheet:: STP60NE06-16(FP)

Specifications

STMicroelectronics STP60NE06-16 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP60NE06-16.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
60A
Base Part Number
STP60N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Turn On Delay Time
40 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
160nC @ 10V
Rise Time
125ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
150 ns
Continuous Drain Current (ID)
60A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.016Ohm
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
240A
Avalanche Energy Rating (Eas)
350 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP60NE06-16 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 350 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6200pF @ 25V.This device has a continuous drain current (ID) of [60A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 40 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

STP60NE06-16 Features
the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 60V voltage
based on its rated peak drain current 240A.

STP60NE06-16 Applications
There are a lot of STMicroelectronics
STP60NE06-16 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

STP60NE06-16 More Descriptions

Trans MOSFET N-CH 60V 60A 3-Pin(3 Tab) TO-220
Power MOSFET Transistors N-Ch 60 Volt 60 Amp
Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
French Electronic Distributor since 1988
CAP CER 0.015UF 100V X7R RADIAL

Product Comparison

The three parts on the right have similar specifications to STP60NE06-16.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Radiation Hardening

RoHS Status

Lead Free

Number of Pins

Series

Additional Feature

Terminal Position

Configuration

Drain to Source Voltage (Vdss)

Turn-Off Delay Time

Threshold Voltage

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Height

Length

Width

REACH SVHC

Pbfree Code

Resistance

Recovery Time

Lifecycle Status

Factory Lead Time

Manufacturer Package Identifier

Case Connection

View Compare
STP60NE06-16

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

175°C TJ

Tube

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

60A

STP60N

3

R-PSFM-T3

1

150W Tc

Single

ENHANCEMENT MODE

150W

40 ns

N-Channel

SWITCHING

16m Ω @ 30A, 10V

4V @ 250μA

6200pF @ 25V

60A Tc

160nC @ 10V

125ns

10V

±20V

150 ns

60A

TO-220AB

20V

0.016Ohm

60V

240A

350 mJ

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP6N52K3

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

e3

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP6N

3

-

1

70W Tc

-

ENHANCEMENT MODE

-

10 ns

N-Channel

SWITCHING

1.2 Ω @ 2.5A, 10V

4.5V @ 50μA

670pF @ 50V

5A Tc

26nC @ 10V

11ns

10V

±30V

18 ns

5A

TO-220AB

30V

-

-

20A

110 mJ

No

ROHS3 Compliant

Lead Free

3

SuperMESH3™

ULTRA-LOW RESISTANCE

SINGLE

SINGLE WITH BUILT-IN DIODE

525V

31 ns

3.75V

5A

525V

15.75mm

10.4mm

4.6mm

No SVHC

-

-

-

-

-

-

-

STP60NE06-16 vs STP6N52K3
STP6NK50Z

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

500V

MOSFET (Metal Oxide)

5.6A

STP6N

3

-

1

90W Tc

Single

ENHANCEMENT MODE

90W

12 ns

N-Channel

SWITCHING

1.2 Ω @ 2.8A, 10V

4.5V @ 50μA

690pF @ 25V

5.6A Tc

24.6nC @ 10V

23.5ns

10V

±30V

23 ns

5.6A

TO-220AB

30V

-

500V

22.4A

-

No

ROHS3 Compliant

Lead Free

3

SuperMESH™

-

-

-

-

31 ns

3.75V

-

-

15.75mm

10.4mm

4.6mm

No SVHC

yes

1.2Ohm

254 ns

-

-

-

-

STP60NE06-16 vs STP6NK50Z
STP62NS04Z

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

62A

STP62N

3

-

1

110W Tc

Single

ENHANCEMENT MODE

110W

13 ns

N-Channel

SWITCHING

15m Ω @ 30A, 10V

4V @ 250μA

1330pF @ 25V

62A Tc

47nC @ 10V

104ns

10V

Clamped

42 ns

62A

TO-220AB

18V

-

33V

248A

500 mJ

No

ROHS3 Compliant

Lead Free

3

MESH OVERLAY™

-

-

-

-

41 ns

4V

40A

-

15.75mm

10.4mm

4.6mm

No SVHC

-

15MOhm

-

ACTIVE (Last Updated: 8 months ago)

12 Weeks

0015988_Rev_R

DRAIN

STP60NE06-16 vs STP62NS04Z