STMicroelectronics STP25NM60ND

Name: STP25NM60ND
Brand: STMicroelectronics
SKU: 2478200-STP25NM60ND
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP25NM60ND

Manufacturer:: STMicroelectronics

Ventron No:: 2478200-STP25NM60ND

Description:: MOSFET N-CH 600V 21A TO-220

ECAD Model:

Datasheet:: STP25NM60ND

Specifications

STMicroelectronics STP25NM60ND technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP25NM60ND.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
FDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
160mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP25N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Turn On Delay Time
60 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2400pF @ 50V
Current - Continuous Drain (Id) @ 25°C
21A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
21A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
84A
Avalanche Energy Rating (Eas)
850 mJ
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP25NM60ND Description
As a member of FDmesh? II power MOSFETs provided by STMicroelectronics, STP25NM60ND is equipped with an intrinsic fast-recovery body diode and developed based on the second generation of MDmesh? technology. It is optimized for extremely low on-resistance and superior switching performance. Power MOSFET STP25NM60ND is well suited for bridge topologies and ZVS phase-shift converters.

STP25NM60ND Features
Low input capacitance
Low gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
Available in the TO-220 package

STP25NM60ND Applications
Switching applications
Bridge topologies
ZVS phase-shift converters

STP25NM60ND More Descriptions

N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
N-Channel 600 V 0.16 Ohm Flange Mount FDmesh II Power MosFet - TO-220
Trans MOSFET N-CH 600V 21A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 21A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 160W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Product Comparison

The three parts on the right have similar specifications to STP25NM60ND.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Voltage - Rated DC

Current Rating

JESD-30 Code

Lifecycle Status

Factory Lead Time

Weight

Number of Channels

Case Connection

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

View Compare
STP25NM60ND

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

160mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP25N

3

1

160W Tc

Single

ENHANCEMENT MODE

160W

60 ns

N-Channel

SWITCHING

160m Ω @ 10.5A, 10V

5V @ 250μA

2400pF @ 50V

21A Tc

80nC @ 10V

30ns

10V

±25V

40 ns

50 ns

21A

4V

TO-220AB

25V

600V

84A

850 mJ

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
STP20N20

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

SILICON

-50°C~150°C TJ

Tube

STripFET™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP20N

3

1

90W Tc

Single

ENHANCEMENT MODE

90W

15 ns

N-Channel

SWITCHING

125m Ω @ 10A, 10V

4V @ 250μA

940pF @ 25V

18A Tc

39nC @ 10V

30ns

10V

±20V

10 ns

40 ns

18A

-

TO-220AB

20V

200V

72A

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

yes

200V

18A

R-PSFM-T3

-

-

-

-

-

-

-

-

STP25NM60ND vs STP20N20
STP28N60M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

3

EAR99

-

-

-

MOSFET (Metal Oxide)

STP28N

-

1

170W Tc

Single

ENHANCEMENT MODE

-

14.5 ns

N-Channel

SWITCHING

150m Ω @ 12A, 10V

4V @ 250μA

1370pF @ 100V

24A Tc

37nC @ 10V

-

10V

±25V

-

100 ns

24A

-

TO-220AB

25V

-

88A

-

15.75mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

329.988449mg

1

DRAIN

600V

22A

600V

STP25NM60ND vs STP28N60M2
STP240N10F7

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VII

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

STP240

-

-

300W Tc

Single

-

300W

62 ns

N-Channel

-

3.2m Ω @ 60A, 10V

4.5V @ 250μA

12600pF @ 25V

180A Tc

176nC @ 10V

108ns

10V

±20V

40 ns

148 ns

180A

-

-

20V

100V

-

-

15.75mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

ACTIVE (Last Updated: 7 months ago)

13 Weeks

-

-

-

-

-

-

STP25NM60ND vs STP240N10F7