STB9NK70ZT4

STMicroelectronics STB9NK70ZT4

Part Number:
STB9NK70ZT4
Manufacturer:
STMicroelectronics
Ventron No:
2488010-STB9NK70ZT4
Description:
MOSFET N-CH 700V 7.5A D2PAK
ECAD Model:
Datasheet:
STB9NK70ZT4

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Specifications
STMicroelectronics STB9NK70ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB9NK70ZT4.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    700V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Reach Compliance Code
    not_compliant
  • Current Rating
    7.5A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STB9N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    115W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    115W
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.2 Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1370pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    68nC @ 10V
  • Rise Time
    17ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    7.5A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    700V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STB9NK70ZT4 Overview
A device's maximum input capacitance is 1370pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=700V, and this device has a drain-to-source breakdown voltage of 700V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STB9NK70ZT4 Features
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 45 ns


STB9NK70ZT4 Applications
There are a lot of STMicroelectronics
STB9NK70ZT4 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STB9NK70ZT4 More Descriptions
N-CHANNEL 700V 1 OHM 7.5A D2PAK ZENER-PROTECTED SuperMESH POWER MOSFET
Eia Case Size: 1210, Voltage: 250, Cap Value: 100000, Tol: /-20%, Thickness: 2.00 0.30, -0.20
Power MOSFET Transistors N-Ch 700 Volt 7.5 A
Power Field-Effect Transistor, 7.5A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to STB9NK70ZT4.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Resistance
    Turn On Delay Time
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Number of Channels
    View Compare
  • STB9NK70ZT4
    STB9NK70ZT4
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    700V
    MOSFET (Metal Oxide)
    GULL WING
    245
    not_compliant
    7.5A
    30
    STB9N
    3
    R-PSSO-G2
    Not Qualified
    1
    115W Tc
    Single
    ENHANCEMENT MODE
    115W
    N-Channel
    SWITCHING
    1.2 Ω @ 4A, 10V
    4.5V @ 100μA
    1370pF @ 25V
    7.5A Tc
    68nC @ 10V
    17ns
    10V
    ±30V
    13 ns
    45 ns
    7.5A
    30V
    700V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STB9NK60ZT4
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    7A
    30
    STB9N
    3
    R-PSSO-G2
    -
    1
    125W Tc
    Single
    ENHANCEMENT MODE
    125W
    N-Channel
    SWITCHING
    950m Ω @ 3.5A, 10V
    4.5V @ 100μA
    1110pF @ 25V
    7A Tc
    53nC @ 10V
    17ns
    10V
    ±30V
    15 ns
    43 ns
    7A
    30V
    600V
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    950mOhm
    19 ns
    3.75V
    7A
    28A
    4.6mm
    10.4mm
    9.35mm
    No SVHC
    No
    -
  • STB95N4F3
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ III
    e3
    Obsolete
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    STB95N
    -
    -
    -
    1
    110W Tc
    Single
    -
    110W
    N-Channel
    -
    5.8m Ω @ 40A, 10V
    4V @ 250μA
    2200pF @ 25V
    80A Tc
    54nC @ 10V
    50ns
    10V
    ±20V
    15 ns
    40 ns
    80A
    20V
    40V
    ROHS3 Compliant
    Lead Free
    -
    -
    5MOhm
    15 ns
    -
    -
    -
    -
    -
    -
    -
    No
    -
  • STB9NK80Z
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, SuperMESH™
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    STB9N
    -
    -
    -
    -
    125W Tc
    Single
    -
    125W
    N-Channel
    -
    1.8 Ω @ 2.6A, 10V
    4.5V @ 100μA
    1138pF @ 25V
    5.2A Tc
    40nC @ 10V
    12ns
    10V
    ±30V
    22 ns
    45 ns
    5.2A
    30V
    800V
    ROHS3 Compliant
    -
    -
    12 Weeks
    -
    20 ns
    -
    -
    -
    -
    -
    -
    -
    No
    1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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