STMicroelectronics STB9NK70ZT4
- Part Number:
- STB9NK70ZT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488010-STB9NK70ZT4
- Description:
- MOSFET N-CH 700V 7.5A D2PAK
- Datasheet:
- STB9NK70ZT4
STMicroelectronics STB9NK70ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB9NK70ZT4.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC700V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Reach Compliance Codenot_compliant
- Current Rating7.5A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTB9N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max115W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation115W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.2 Ω @ 4A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds1370pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.5A Tc
- Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
- Rise Time17ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)7.5A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage700V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STB9NK70ZT4 Overview
A device's maximum input capacitance is 1370pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=700V, and this device has a drain-to-source breakdown voltage of 700V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STB9NK70ZT4 Features
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 45 ns
STB9NK70ZT4 Applications
There are a lot of STMicroelectronics
STB9NK70ZT4 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1370pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=700V, and this device has a drain-to-source breakdown voltage of 700V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STB9NK70ZT4 Features
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 45 ns
STB9NK70ZT4 Applications
There are a lot of STMicroelectronics
STB9NK70ZT4 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STB9NK70ZT4 More Descriptions
N-CHANNEL 700V 1 OHM 7.5A D2PAK ZENER-PROTECTED SuperMESH POWER MOSFET
Eia Case Size: 1210, Voltage: 250, Cap Value: 100000, Tol: /-20%, Thickness: 2.00 0.30, -0.20
Power MOSFET Transistors N-Ch 700 Volt 7.5 A
Power Field-Effect Transistor, 7.5A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Eia Case Size: 1210, Voltage: 250, Cap Value: 100000, Tol: /-20%, Thickness: 2.00 0.30, -0.20
Power MOSFET Transistors N-Ch 700 Volt 7.5 A
Power Field-Effect Transistor, 7.5A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to STB9NK70ZT4.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRoHS StatusLead FreeLifecycle StatusFactory Lead TimeResistanceTurn On Delay TimeThreshold VoltageDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningNumber of ChannelsView Compare
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STB9NK70ZT4Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~150°C TJTape & Reel (TR)SuperMESH™e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn)FET General Purpose Power700VMOSFET (Metal Oxide)GULL WING245not_compliant7.5A30STB9N3R-PSSO-G2Not Qualified1115W TcSingleENHANCEMENT MODE115WN-ChannelSWITCHING1.2 Ω @ 4A, 10V4.5V @ 100μA1370pF @ 25V7.5A Tc68nC @ 10V17ns10V±30V13 ns45 ns7.5A30V700VROHS3 CompliantLead Free--------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~150°C TJTape & Reel (TR)SuperMESH™e3Active1 (Unlimited)2EAR99Matte Tin (Sn) - annealedFET General Purpose Power600VMOSFET (Metal Oxide)GULL WING245-7A30STB9N3R-PSSO-G2-1125W TcSingleENHANCEMENT MODE125WN-ChannelSWITCHING950m Ω @ 3.5A, 10V4.5V @ 100μA1110pF @ 25V7A Tc53nC @ 10V17ns10V±30V15 ns43 ns7A30V600VROHS3 CompliantLead FreeACTIVE (Last Updated: 7 months ago)12 Weeks950mOhm19 ns3.75V7A28A4.6mm10.4mm9.35mmNo SVHCNo-
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTape & Reel (TR)STripFET™ IIIe3Obsolete1 (Unlimited)-EAR99Matte Tin (Sn) - annealedFET General Purpose Power-MOSFET (Metal Oxide)-----STB95N---1110W TcSingle-110WN-Channel-5.8m Ω @ 40A, 10V4V @ 250μA2200pF @ 25V80A Tc54nC @ 10V50ns10V±20V15 ns40 ns80A20V40VROHS3 CompliantLead Free--5MOhm15 ns-------No-
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q101, SuperMESH™-Active1 (Unlimited)-EAR99---MOSFET (Metal Oxide)-----STB9N----125W TcSingle-125WN-Channel-1.8 Ω @ 2.6A, 10V4.5V @ 100μA1138pF @ 25V5.2A Tc40nC @ 10V12ns10V±30V22 ns45 ns5.2A30V800VROHS3 Compliant--12 Weeks-20 ns-------No1
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