STMicroelectronics STB9NK50ZT4
- Part Number:
- STB9NK50ZT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2484345-STB9NK50ZT4
- Description:
- MOSFET N-CH 500V 7.2A D2PAK
- Datasheet:
- STB9NK50ZT4
STMicroelectronics STB9NK50ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB9NK50ZT4.
- Lifecycle StatusNRND (Last Updated: 7 months ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Current Rating7.2A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTB9N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max110W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation110W
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs850m Ω @ 3.6A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds910pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.2A Tc
- Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
- Rise Time20ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)22 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)7.2A
- Threshold Voltage3.75V
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.85Ohm
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)28.8A
- Height4.6mm
- Length10.4mm
- Width9.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STB9NK50ZT4 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 910pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Peak drain current is 28.8A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 3.75V, which means that it will not activate any of its functions when its threshold voltage reaches 3.75V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STB9NK50ZT4 Features
a continuous drain current (ID) of 7.2A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 28.8A.
a threshold voltage of 3.75V
STB9NK50ZT4 Applications
There are a lot of STMicroelectronics
STB9NK50ZT4 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 910pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Peak drain current is 28.8A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 3.75V, which means that it will not activate any of its functions when its threshold voltage reaches 3.75V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STB9NK50ZT4 Features
a continuous drain current (ID) of 7.2A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 28.8A.
a threshold voltage of 3.75V
STB9NK50ZT4 Applications
There are a lot of STMicroelectronics
STB9NK50ZT4 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STB9NK50ZT4 More Descriptions
MOSFET N-CH 500V 7.2A D2PAK / Trans MOSFET N-CH 500V 7.2A 3-Pin(2 Tab) D2PAK T/R
N-Channel 500V - 0.72 Ohm - 7.2A Zener-Protected SuperMESH™ Power MOSFET
MOSFET, N CH, 500V, 7.2A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.2A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.72ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; P
N-Channel 500V - 0.72 Ohm - 7.2A Zener-Protected SuperMESH™ Power MOSFET
MOSFET, N CH, 500V, 7.2A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.2A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.72ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; P
The three parts on the right have similar specifications to STB9NK50ZT4.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePbfree CodeResistanceFactory Lead TimeNumber of ChannelsView Compare
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STB9NK50ZT4NRND (Last Updated: 7 months ago)Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~150°C TJTape & Reel (TR)SuperMESH™e3Not For New Designs1 (Unlimited)2EAR99Matte Tin (Sn) - annealedFET General Purpose Power500VMOSFET (Metal Oxide)GULL WING2457.2A30STB9N3R-PSSO-G21110W TcSingleENHANCEMENT MODE110W17 nsN-ChannelSWITCHING850m Ω @ 3.6A, 10V4.5V @ 100μA910pF @ 25V7.2A Tc32nC @ 10V20ns10V±30V22 ns45 ns7.2A3.75V30V0.85Ohm500V28.8A4.6mm10.4mm9.35mmNo SVHCNoROHS3 CompliantLead Free-----
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-Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~150°C TJTubeSuperMESH™e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn) - annealedFET General Purpose Power-MOSFET (Metal Oxide)----STB9N3-1115W TcSingleENHANCEMENT MODE115W22 nsN-ChannelSWITCHING1.2 Ω @ 4A, 10V4.5V @ 100μA1370pF @ 25V7.5A Tc68nC @ 10V17ns10V±30V13 ns45 ns7.5A3.75V30V-700V-10.75mm10.4mm4.6mmNo SVHCNoROHS3 Compliant-yes---
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTape & Reel (TR)STripFET™ IIIe3Obsolete1 (Unlimited)-EAR99Matte Tin (Sn) - annealedFET General Purpose Power-MOSFET (Metal Oxide)----STB95N--1110W TcSingle-110W15 nsN-Channel-5.8m Ω @ 40A, 10V4V @ 250μA2200pF @ 25V80A Tc54nC @ 10V50ns10V±20V15 ns40 ns80A-20V-40V-----NoROHS3 CompliantLead Free-5MOhm--
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q101, SuperMESH™-Active1 (Unlimited)-EAR99---MOSFET (Metal Oxide)----STB9N---125W TcSingle-125W20 nsN-Channel-1.8 Ω @ 2.6A, 10V4.5V @ 100μA1138pF @ 25V5.2A Tc40nC @ 10V12ns10V±30V22 ns45 ns5.2A-30V-800V-----NoROHS3 Compliant---12 Weeks1
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