STB9NK50ZT4

STMicroelectronics STB9NK50ZT4

Part Number:
STB9NK50ZT4
Manufacturer:
STMicroelectronics
Ventron No:
2484345-STB9NK50ZT4
Description:
MOSFET N-CH 500V 7.2A D2PAK
ECAD Model:
Datasheet:
STB9NK50ZT4

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Specifications
STMicroelectronics STB9NK50ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB9NK50ZT4.
  • Lifecycle Status
    NRND (Last Updated: 7 months ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Current Rating
    7.2A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STB9N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    110W
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    850m Ω @ 3.6A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    910pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7.2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    32nC @ 10V
  • Rise Time
    20ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    22 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    7.2A
  • Threshold Voltage
    3.75V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain-source On Resistance-Max
    0.85Ohm
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    28.8A
  • Height
    4.6mm
  • Length
    10.4mm
  • Width
    9.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STB9NK50ZT4 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 910pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Peak drain current is 28.8A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 3.75V, which means that it will not activate any of its functions when its threshold voltage reaches 3.75V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STB9NK50ZT4 Features
a continuous drain current (ID) of 7.2A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 28.8A.
a threshold voltage of 3.75V


STB9NK50ZT4 Applications
There are a lot of STMicroelectronics
STB9NK50ZT4 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STB9NK50ZT4 More Descriptions
MOSFET N-CH 500V 7.2A D2PAK / Trans MOSFET N-CH 500V 7.2A 3-Pin(2 Tab) D2PAK T/R
N-Channel 500V - 0.72 Ohm - 7.2A Zener-Protected SuperMESH™ Power MOSFET
MOSFET, N CH, 500V, 7.2A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.2A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.72ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; P
Product Comparison
The three parts on the right have similar specifications to STB9NK50ZT4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Pbfree Code
    Resistance
    Factory Lead Time
    Number of Channels
    View Compare
  • STB9NK50ZT4
    STB9NK50ZT4
    NRND (Last Updated: 7 months ago)
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    e3
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    500V
    MOSFET (Metal Oxide)
    GULL WING
    245
    7.2A
    30
    STB9N
    3
    R-PSSO-G2
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    17 ns
    N-Channel
    SWITCHING
    850m Ω @ 3.6A, 10V
    4.5V @ 100μA
    910pF @ 25V
    7.2A Tc
    32nC @ 10V
    20ns
    10V
    ±30V
    22 ns
    45 ns
    7.2A
    3.75V
    30V
    0.85Ohm
    500V
    28.8A
    4.6mm
    10.4mm
    9.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • STB9NK70Z-1
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    STB9N
    3
    -
    1
    115W Tc
    Single
    ENHANCEMENT MODE
    115W
    22 ns
    N-Channel
    SWITCHING
    1.2 Ω @ 4A, 10V
    4.5V @ 100μA
    1370pF @ 25V
    7.5A Tc
    68nC @ 10V
    17ns
    10V
    ±30V
    13 ns
    45 ns
    7.5A
    3.75V
    30V
    -
    700V
    -
    10.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    -
    yes
    -
    -
    -
  • STB95N4F3
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ III
    e3
    Obsolete
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    STB95N
    -
    -
    1
    110W Tc
    Single
    -
    110W
    15 ns
    N-Channel
    -
    5.8m Ω @ 40A, 10V
    4V @ 250μA
    2200pF @ 25V
    80A Tc
    54nC @ 10V
    50ns
    10V
    ±20V
    15 ns
    40 ns
    80A
    -
    20V
    -
    40V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    5MOhm
    -
    -
  • STB9NK80Z
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, SuperMESH™
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    STB9N
    -
    -
    -
    125W Tc
    Single
    -
    125W
    20 ns
    N-Channel
    -
    1.8 Ω @ 2.6A, 10V
    4.5V @ 100μA
    1138pF @ 25V
    5.2A Tc
    40nC @ 10V
    12ns
    10V
    ±30V
    22 ns
    45 ns
    5.2A
    -
    30V
    -
    800V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    12 Weeks
    1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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