STMicroelectronics STB70NF03LT4

STB70NF03LT4 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1440pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 70A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.Peak drain current is 280A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 18V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

STB70NF03LT4 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 280A.


STB70NF03LT4 Applications
There are a lot of STMicroelectronics
STB70NF03LT4 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies