STB70NF3LLT4

STMicroelectronics STB70NF3LLT4

Part Number:
STB70NF3LLT4
Manufacturer:
STMicroelectronics
Ventron No:
2849827-STB70NF3LLT4
Description:
MOSFET N-CH 30V 70A D2PAK
ECAD Model:
Datasheet:
STB70NF3LLT4

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Specifications
STMicroelectronics STB70NF3LLT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB70NF3LLT4.
  • Lifecycle Status
    NRND (Last Updated: 7 months ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Current Rating
    70A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STB70N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    100W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    100W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    23 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9.5m Ω @ 35A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1650pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    70A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    33nC @ 4.5V
  • Rise Time
    165ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    28 ns
  • Turn-Off Delay Time
    27 ns
  • Continuous Drain Current (ID)
    35A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    16V
  • Drain-source On Resistance-Max
    0.0095Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    280A
  • Dual Supply Voltage
    30V
  • Avalanche Energy Rating (Eas)
    500 mJ
  • Nominal Vgs
    1 V
  • Height
    4.6mm
  • Length
    10.75mm
  • Width
    10.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STB70NF3LLT4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1650pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 35A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 280A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

STB70NF3LLT4 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 280A.
a threshold voltage of 1V


STB70NF3LLT4 Applications
There are a lot of STMicroelectronics
STB70NF3LLT4 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STB70NF3LLT4 More Descriptions
N-CHANNEL 30V - 0.008 OHM - 70A D2PAK LOW GATE CHARGE STripFET MOSFET
Trans MOSFET N-CH 30V 70A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 70A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 30V, 70A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 100W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 70A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 16V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to STB70NF3LLT4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Reach Compliance Code
    Qualification Status
    Factory Lead Time
    View Compare
  • STB70NF3LLT4
    STB70NF3LLT4
    NRND (Last Updated: 7 months ago)
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    e3
    Not For New Designs
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    GULL WING
    245
    70A
    30
    STB70N
    3
    R-PSSO-G2
    1
    100W Tc
    Single
    ENHANCEMENT MODE
    100W
    DRAIN
    23 ns
    N-Channel
    SWITCHING
    9.5m Ω @ 35A, 10V
    1V @ 250μA
    1650pF @ 25V
    70A Tc
    33nC @ 4.5V
    165ns
    4.5V 10V
    ±16V
    28 ns
    27 ns
    35A
    1V
    16V
    0.0095Ohm
    30V
    280A
    30V
    500 mJ
    1 V
    4.6mm
    10.75mm
    10.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
  • STB70NFS03LT4
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    GULL WING
    245
    70A
    30
    STB70N
    3
    R-PSSO-G2
    1
    100W Tc
    Single
    ENHANCEMENT MODE
    100W
    DRAIN
    -
    N-Channel
    SWITCHING
    9.5m Ω @ 35A, 10V
    1V @ 250μA
    1440pF @ 25V
    70A Tc
    30nC @ 5V
    165ns
    5V 10V
    ±18V
    25 ns
    21 ns
    70A
    -
    18V
    0.0095Ohm
    30V
    280A
    -
    500 mJ
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    not_compliant
    Not Qualified
    -
  • STB76NF75
    ACTIVE (Last Updated: 8 months ago)
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    2
    -
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    -
    STB76N
    4
    R-PSSO-G2
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    25 ns
    N-Channel
    SWITCHING
    11m Ω @ 40A, 10V
    4V @ 250μA
    3700pF @ 25V
    80A Tc
    160nC @ 10V
    100ns
    10V
    ±20V
    30 ns
    66 ns
    80A
    -
    20V
    0.011Ohm
    75V
    -
    -
    700 mJ
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    12 Weeks
  • STB75NH02LT4
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Cut Tape (CT)
    STripFET™ III
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    24V
    MOSFET (Metal Oxide)
    GULL WING
    245
    75A
    30
    STB75N
    3
    R-PSSO-G2
    1
    80W Tc
    Single
    ENHANCEMENT MODE
    80W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    8m Ω @ 30A, 10V
    1.8V @ 250μA
    2050pF @ 15V
    60A Tc
    22nC @ 5V
    200ns
    5V 10V
    ±20V
    25 ns
    18 ns
    60A
    -
    20V
    0.014Ohm
    24V
    240A
    -
    -
    -
    -
    -
    -
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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