STMicroelectronics STB70NF3LLT4
- Part Number:
- STB70NF3LLT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2849827-STB70NF3LLT4
- Description:
- MOSFET N-CH 30V 70A D2PAK
- Datasheet:
- STB70NF3LLT4
STMicroelectronics STB70NF3LLT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB70NF3LLT4.
- Lifecycle StatusNRND (Last Updated: 7 months ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Current Rating70A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTB70N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max100W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation100W
- Case ConnectionDRAIN
- Turn On Delay Time23 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9.5m Ω @ 35A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1650pF @ 25V
- Current - Continuous Drain (Id) @ 25°C70A Tc
- Gate Charge (Qg) (Max) @ Vgs33nC @ 4.5V
- Rise Time165ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)28 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)35A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)16V
- Drain-source On Resistance-Max0.0095Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)280A
- Dual Supply Voltage30V
- Avalanche Energy Rating (Eas)500 mJ
- Nominal Vgs1 V
- Height4.6mm
- Length10.75mm
- Width10.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STB70NF3LLT4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1650pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 35A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 280A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
STB70NF3LLT4 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 280A.
a threshold voltage of 1V
STB70NF3LLT4 Applications
There are a lot of STMicroelectronics
STB70NF3LLT4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1650pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 35A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 280A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
STB70NF3LLT4 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 280A.
a threshold voltage of 1V
STB70NF3LLT4 Applications
There are a lot of STMicroelectronics
STB70NF3LLT4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STB70NF3LLT4 More Descriptions
N-CHANNEL 30V - 0.008 OHM - 70A D2PAK LOW GATE CHARGE STripFET MOSFET
Trans MOSFET N-CH 30V 70A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 70A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 30V, 70A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 100W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 70A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 16V; Voltage Vgs Rds on Measurement: 10V
Trans MOSFET N-CH 30V 70A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 70A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 30V, 70A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 100W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 70A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 16V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to STB70NF3LLT4.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodeQualification StatusFactory Lead TimeView Compare
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STB70NF3LLT4NRND (Last Updated: 7 months ago)Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ IIe3Not For New Designs1 (Unlimited)2SMD/SMTEAR99Matte Tin (Sn)FET General Purpose Power30VMOSFET (Metal Oxide)GULL WING24570A30STB70N3R-PSSO-G21100W TcSingleENHANCEMENT MODE100WDRAIN23 nsN-ChannelSWITCHING9.5m Ω @ 35A, 10V1V @ 250μA1650pF @ 25V70A Tc33nC @ 4.5V165ns4.5V 10V±16V28 ns27 ns35A1V16V0.0095Ohm30V280A30V500 mJ1 V4.6mm10.75mm10.4mmNo SVHCNoROHS3 CompliantLead Free----
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)STripFET™e3Obsolete1 (Unlimited)2-EAR99Matte Tin (Sn) - annealedFET General Purpose Power30VMOSFET (Metal Oxide)GULL WING24570A30STB70N3R-PSSO-G21100W TcSingleENHANCEMENT MODE100WDRAIN-N-ChannelSWITCHING9.5m Ω @ 35A, 10V1V @ 250μA1440pF @ 25V70A Tc30nC @ 5V165ns5V 10V±18V25 ns21 ns70A-18V0.0095Ohm30V280A-500 mJ------ROHS3 CompliantLead Freenot_compliantNot Qualified-
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ACTIVE (Last Updated: 8 months ago)Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ IIe3Active1 (Unlimited)2-EAR99Matte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)GULL WING245--STB76N4R-PSSO-G21300W TcSingleENHANCEMENT MODE300WDRAIN25 nsN-ChannelSWITCHING11m Ω @ 40A, 10V4V @ 250μA3700pF @ 25V80A Tc160nC @ 10V100ns10V±20V30 ns66 ns80A-20V0.011Ohm75V--700 mJ-----NoROHS3 CompliantLead Free--12 Weeks
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJCut Tape (CT)STripFET™ IIIe3Obsolete1 (Unlimited)2-EAR99Matte Tin (Sn)FET General Purpose Power24VMOSFET (Metal Oxide)GULL WING24575A30STB75N3R-PSSO-G2180W TcSingleENHANCEMENT MODE80WDRAIN12 nsN-ChannelSWITCHING8m Ω @ 30A, 10V1.8V @ 250μA2050pF @ 15V60A Tc22nC @ 5V200ns5V 10V±20V25 ns18 ns60A-20V0.014Ohm24V240A-------NoNon-RoHS Compliant----
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