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STB4NK60ZT4

STMicroelectronics STB4NK60ZT4

Part Number:
STB4NK60ZT4
Manufacturer:
STMicroelectronics
Ventron No:
2480378-STB4NK60ZT4
Description:
MOSFET N-CH 600V 4A D2PAK
ECAD Model:
Datasheet:
STB4NK60ZT4

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Specifications
STMicroelectronics STB4NK60ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB4NK60ZT4.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    2Ohm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Current Rating
    4A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STB4N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    70W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    70W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2 Ω @ 2A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    510pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 10V
  • Rise Time
    9.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    16.5 ns
  • Turn-Off Delay Time
    29 ns
  • Continuous Drain Current (ID)
    2A
  • Threshold Voltage
    3.75V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain to Source Breakdown Voltage
    600V
  • Dual Supply Voltage
    600V
  • Nominal Vgs
    3.75 V
  • Height
    4.6mm
  • Length
    10.4mm
  • Width
    9.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STB4NK60ZT4 Description This STB4NK60ZT4 is an N-channel Power MOSFET based on STMicroelectronics' SuperMESHTM technology, which is an improvement on the well-established PowerMESHTM technology. In addition to reducing on-resistance, these devices also provide high levels of DV/DT capabilities.
STB4NK60ZT4 Features Gate charge minimized
Zener-protected
Extremely high dv/dt capability
100% avalanche tested
STB4NK60ZT4 Applications Industrial
Industrial
Power Management
Motor Drivers
Battery Chargers

STB4NK60ZT4 More Descriptions
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in D2PAK
Trans MOSFET N-CH 600V 4A 3-Pin(2 Tab) D2PAK T/R
MOSFET, N CH, 600V, 4A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Source Voltage Vds:600V; On Resistance
MOSFET, N CH, 600V, 4A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.76ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 70W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 4A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to STB4NK60ZT4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Reach Compliance Code
    Qualification Status
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Manufacturer Package Identifier
    Terminal Position
    Configuration
    Number of Channels
    Case Connection
    Max Junction Temperature (Tj)
    View Compare
  • STB4NK60ZT4
    STB4NK60ZT4
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    2Ohm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    GULL WING
    245
    4A
    30
    STB4N
    3
    R-PSSO-G2
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    12 ns
    N-Channel
    SWITCHING
    2 Ω @ 2A, 10V
    4.5V @ 50μA
    510pF @ 25V
    4A Tc
    26nC @ 10V
    9.5ns
    10V
    ±30V
    16.5 ns
    29 ns
    2A
    3.75V
    30V
    4A
    600V
    600V
    3.75 V
    4.6mm
    10.4mm
    9.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STB45NF06T4
    STB45NF06T4
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-4, D2Pak (3 Leads Tab), TO-263AA
    3
    SILICON
    175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    23mOhm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    30
    STB45N
    3
    R-PSSO-G2
    1
    80W Tc
    Single
    ENHANCEMENT MODE
    80W
    12 ns
    N-Channel
    SWITCHING
    28m Ω @ 19A, 10V
    4V @ 250μA
    980pF @ 25V
    38A Tc
    58nC @ 10V
    40ns
    10V
    ±20V
    10 ns
    28 ns
    19A
    3V
    20V
    -
    60V
    60V
    3 V
    4.6mm
    10.4mm
    9.35mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    not_compliant
    Not Qualified
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STB4NK60ZT4 vs STB45NF06T4
  • STB4NK60Z-1
    STB4NK60Z-1
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    150°C TJ
    Tube
    SuperMESH™
    e3
    Not For New Designs
    1 (Unlimited)
    3
    -
    EAR99
    -
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    STB4N
    3
    -
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    12 ns
    N-Channel
    SWITCHING
    2 Ω @ 2A, 10V
    4.5V @ 50μA
    510pF @ 25V
    4A Tc
    26nC @ 10V
    9.5ns
    10V
    ±30V
    16.5 ns
    29 ns
    4A
    -
    30V
    4A
    600V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    2Ohm
    16A
    120 mJ
    -
    -
    -
    -
    -
    -
    STB4NK60ZT4 vs STB4NK60Z-1
  • STB43N65M5
    STB43N65M5
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    Automotive, AEC-Q101, MDmesh™
    -
    Active
    1 (Unlimited)
    2
    -
    EAR99
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STB43N
    -
    R-PSSO-G2
    1
    250W Tc
    -
    ENHANCEMENT MODE
    250W
    73 ns
    N-Channel
    SWITCHING
    63m Ω @ 21A, 10V
    5V @ 250μA
    4400pF @ 100V
    42A Tc
    100nC @ 10V
    -
    10V
    ±25V
    -
    12 ns
    42A
    -
    25V
    -
    650V
    -
    -
    4.83mm
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    0.063Ohm
    -
    650 mJ
    D2PAK-0079457-A2
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    1
    DRAIN
    150°C
    STB4NK60ZT4 vs STB43N65M5
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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