STMicroelectronics STB14NM50N

Name: STB14NM50N
Brand: STMicroelectronics
SKU: 3070216-STB14NM50N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB14NM50N

Manufacturer:: STMicroelectronics

Ventron No:: 3070216-STB14NM50N

Description:: MOSFET N-CH 500V 12A D2PAK

ECAD Model:

Datasheet:: STB14NM50N

Specifications

STMicroelectronics STB14NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB14NM50N.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
320mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Base Part Number
STB14N
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
90W Tc
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
Case Connection
DRAIN
Turn On Delay Time
10.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
320m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
816pF @ 50V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
32 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
48A
Height
4.6mm
Length
10.75mm
Width
10.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB14NM50N Description
The STB14NM50N is an MDmesh? II N-channel Power MOSFET developed using the second generation of MDmesh? technology. The STMicroelectronics STB14NM50N associates a vertical structure with strip layout yield to lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.

STB14NM50N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
In the TO-263 package
power dissipation: 90W

STB14NM50N Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STB14NM50N More Descriptions

N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package
Trans MOSFET N-CH 500V 12A 3-Pin(2 Tab) D2PAK T/R
N-Channel 550 V 0.32 Ohm Surface Mount MDMesh II Power MosFet - D2PAK
Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 500V, 12A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to STB14NM50N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Current Rating

Time@Peak Reflow Temperature-Max (s)

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Additional Feature

Voltage - Rated DC

Reach Compliance Code

Qualification Status

View Compare
STB14NM50N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

26 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

150°C TJ

Cut Tape (CT)

MDmesh™ II

e3

Active

1 (Unlimited)

2

EAR99

320mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

245

STB14N

4

R-PSSO-G2

1

90W Tc

Dual

ENHANCEMENT MODE

90W

DRAIN

10.2 ns

N-Channel

SWITCHING

320m Ω @ 6A, 10V

4V @ 100μA

816pF @ 50V

12A Tc

27nC @ 10V

9ns

10V

±25V

32 ns

42 ns

12A

3V

25V

500V

48A

4.6mm

10.75mm

10.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
STB130NS04ZBT4

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

245

-

3

R-PSSO-G2

1

300W Tc

Single

ENHANCEMENT MODE

300W

DRAIN

40 ns

N-Channel

SWITCHING

9m Ω @ 40A, 10V

4V @ 1mA

2700pF @ 25V

80A Tc

80nC @ 10V

10ns

10V

Clamped

100 ns

220 ns

80A

-

18V

33V

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

80A

30

0.009Ohm

500 mJ

-

-

-

-

STB14NM50N vs STB130NS04ZBT4
STB16NK65Z-S

STMicroelectronics

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

-

380mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

STB16N

3

R-PSIP-T3

1

190W Tc

Single

ENHANCEMENT MODE

190W

-

-

N-Channel

SWITCHING

500m Ω @ 6.5A, 10V

4.5V @ 100μA

2750pF @ 25V

13A Tc

89nC @ 10V

25ns

10V

±30V

17 ns

68 ns

13A

-

30V

650V

52A

-

-

-

-

-

ROHS3 Compliant

Lead Free

13A

NOT SPECIFIED

-

350 mJ

AVALANCHE RATED

650V

not_compliant

Not Qualified

STB14NM50N vs STB16NK65Z-S
STB13NM50N-1

STMicroelectronics

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

-

-

MATTE TIN

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

STB13N

3

-

1

100W Tc

Single

ENHANCEMENT MODE

100W

-

-

N-Channel

SWITCHING

320m Ω @ 6A, 10V

4V @ 250μA

960pF @ 50V

12A Tc

30nC @ 10V

15ns

10V

±25V

10 ns

40 ns

12A

-

25V

500V

48A

-

-

-

-

-

ROHS3 Compliant

-

-

NOT SPECIFIED

-

200 mJ

-

-

-

Not Qualified

STB14NM50N vs STB13NM50N-1