Vishay Siliconix SQ2310ES-T1_GE3

Name: SQ2310ES-T1_GE3
Brand: Vishay Siliconix
SKU: 2478124-SQ2310ES-T1_GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SQ2310ES-T1_GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478124-SQ2310ES-T1_GE3

Description:: MOSFET N-CH 20V 6A SOT23

ECAD Model:

Datasheet:: SQ2310ES-T1_GE3

Specifications

Vishay Siliconix SQ2310ES-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQ2310ES-T1_GE3.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
485pF @ 10V
Current - Continuous Drain (Id) @ 25°C
6A Tc
Gate Charge (Qg) (Max) @ Vgs
8.5nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.5V 4.5V
Vgs (Max)
±8V
Drain to Source Resistance
24mOhm
RoHS Status
ROHS3 Compliant

Description

SQ2310ES-T1_GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 485pF @ 10V is its maximum input capacitance.This device has a drain-to-source resistance of 24mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (1.5V 4.5V), this device contributes to a reduction in overall power consumption.

SQ2310ES-T1_GE3 Features
single MOSFETs transistor is 24mOhm
a 20V drain to source voltage (Vdss)

SQ2310ES-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQ2310ES-T1_GE3 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

SQ2310ES-T1_GE3 More Descriptions

Single N-Channel 20 V 0.042 Ohm 8.5 nC 2 W Silicon Mosfet - SOT-23
N-Channel 20-V (D-S) 175C Mosfet Rohs Compliant: No |Vishay SQ2310ES-T1_GE3
MOSFET, AEC-Q101, N-CH, 20V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 600mV
Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Product Comparison

The three parts on the right have similar specifications to SQ2310ES-T1_GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain to Source Resistance

RoHS Status

Mount

Number of Pins

Weight

Transistor Element Material

Pbfree Code

Number of Terminations

ECCN Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Feedback Cap-Max (Crss)

REACH SVHC

Radiation Hardening

Lead Free

Contact Plating

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Transistor Application

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

View Compare
SQ2310ES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236

-55°C~175°C TJ

Tape & Reel (TR)

TrenchFET®

2016

Active

1 (Unlimited)

MOSFET (Metal Oxide)

2W Tc

N-Channel

30mOhm @ 5A, 4.5V

1V @ 250μA

485pF @ 10V

6A Tc

8.5nC @ 4.5V

20V

1.5V 4.5V

±8V

24mOhm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SQ2361EES-T1-GE3

Vishay Siliconix

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-55°C~175°C TJ

Digi-Reel®

TrenchFET®

2013

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2W Tc

P-Channel

150m Ω @ 2.4A, 10V

2.5V @ 250μA

545pF @ 30V

2.5A Tc

17nC @ 10V

60V

4.5V 10V

±20V

-

ROHS3 Compliant

Surface Mount

3

1.437803g

SILICON

yes

3

EAR99

Other Transistors

DUAL

GULL WING

260

40

3

1

1

Single

ENHANCEMENT MODE

2W

7 ns

8ns

8 ns

19 ns

2.5A

-1.5V

20V

-60V

-2.5 V

50 pF

Unknown

No

Lead Free

-

-

-

-

-

-

-

SQ2310ES-T1_GE3 vs SQ2361EES-T1-GE3
SQ2360EES-T1-GE3

Vishay Siliconix

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

Digi-Reel®

TrenchFET®

2008

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

-

N-Channel

85m Ω @ 6A, 10V

2.5V @ 250μA

370pF @ 25V

4.4A Tc

12nC @ 10V

-

-

-

-

ROHS3 Compliant

Surface Mount

3

-

-

-

3

EAR99

-

DUAL

GULL WING

260

40

3

1

-

Single

ENHANCEMENT MODE

3W

5 ns

11ns

8 ns

10 ns

4.4A

1.5V

20V

60V

-

-

Unknown

No

Lead Free

Tin

175°C

-55°C

3W

SWITCHING

0.066Ohm

1.8 mJ

SQ2310ES-T1_GE3 vs SQ2360EES-T1-GE3
SQ2337ES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2017

Active

1 (Unlimited)

MOSFET (Metal Oxide)

3W Tc

P-Channel

290mOhm @ 1A, 4.5V

2.5V @ 250μA

620pF @ 30V

2.2A Tc

18nC @ 10V

80V

6V 10V

±20V

-

ROHS3 Compliant

Surface Mount

3

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

3W

-

-

-

-

2.2A

-

20V

-

-

-

-

-

-

-

175°C

-55°C

-

-

-

-

SQ2310ES-T1_GE3 vs SQ2337ES-T1_GE3