Vishay Siliconix SQ2309ES-T1_GE3

Name: SQ2309ES-T1_GE3
Brand: Vishay Siliconix
SKU: 2480167-SQ2309ES-T1_GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SQ2309ES-T1_GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2480167-SQ2309ES-T1_GE3

Description:: MOSFET P-CHAN 60V SOT23

ECAD Model:

Datasheet:: SQ2309ES-T1_GE3

Specifications

Vishay Siliconix SQ2309ES-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQ2309ES-T1_GE3.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236 (SOT-23)
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchFET®
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
336mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
265pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.7A Tc
Gate Charge (Qg) (Max) @ Vgs
8.5nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain to Source Resistance
125mOhm
RoHS Status
ROHS3 Compliant

Description

SQ2309ES-T1_GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 265pF @ 25V.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 125mOhm.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SQ2309ES-T1_GE3 Features
single MOSFETs transistor is 125mOhm
a 60V drain to source voltage (Vdss)

SQ2309ES-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQ2309ES-T1_GE3 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

SQ2309ES-T1_GE3 More Descriptions

Trans MOSFET P-CH 60V 1.7A Automotive 3-Pin SOT-23 T/R / MOSFET P-CHAN 60V SOT23
VISHAY - SQ2309ES-T1_GE3 - Power MOSFET, P Channel, 60 V, 2.3 A, 0.125 ohm, SOT-23, Surface Mount
Single P-Channel 60 V 0.704 Ohm 8.5 nC 2 W Silicon SMT Mosfet - SOT-23
Mosfet, Aec-Q101, N-Ch, 60V, 2.3A, Sot-23; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-2.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V Rohs Compliant: Yes |Vishay SQ2309ES-T1_GE3
Small Signal Field-Effect Transistor, 1.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 2.3A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)

Product Comparison

The three parts on the right have similar specifications to SQ2309ES-T1_GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain to Source Resistance

RoHS Status

Mount

Number of Pins

Max Operating Temperature

Min Operating Temperature

Number of Elements

Power Dissipation

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Pbfree Code

Number of Terminations

ECCN Code

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Element Configuration

Operating Mode

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

REACH SVHC

Radiation Hardening

Lead Free

View Compare
SQ2309ES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236 (SOT-23)

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2016

Active

1 (Unlimited)

MOSFET (Metal Oxide)

2W Tc

P-Channel

336mOhm @ 3.8A, 10V

2.5V @ 250μA

265pF @ 25V

1.7A Tc

8.5nC @ 10V

60V

4.5V 10V

±20V

125mOhm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SQ2325ES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236 (SOT-23)

-55°C~175°C TA

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

-

Active

1 (Unlimited)

MOSFET (Metal Oxide)

3W Tc

P-Channel

1.77Ohm @ 500mA, 10V

3.5V @ 250μA

250pF @ 50V

840mA Tc

10nC @ 10V

150V

10V

±20V

-

ROHS3 Compliant

Surface Mount

3

175°C

-55°C

1

3W

1A

20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SQ2309ES-T1_GE3 vs SQ2325ES-T1_GE3
SQ2301ES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236 (SOT-23)

-55°C~175°C TA

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2017

Active

1 (Unlimited)

MOSFET (Metal Oxide)

3W Tc

P-Channel

120mOhm @ 2.8A, 4.5V

1.5V @ 250μA

425pF @ 10V

3.9A Tc

8nC @ 4.5V

20V

2.5V 4.5V

±8V

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SQ2309ES-T1_GE3 vs SQ2301ES-T1_GE3
SQ2319ES-T1-GE3

Vishay Siliconix

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

Cut Tape (CT)

TrenchFET®

2013

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

-

P-Channel

75m Ω @ 3A, 10V

2.5V @ 250μA

620pF @ 25V

4.6A Tc

16nC @ 10V

40V

-

-

-

ROHS3 Compliant

Surface Mount

3

175°C

-55°C

1

3W

-4.6A

20V

yes

3

EAR99

Other Transistors

3W

DUAL

GULL WING

260

40

SQ2319

3

Single

ENHANCEMENT MODE

7 ns

SWITCHING

15ns

25 ns

25 ns

-2V

0.082Ohm

-40V

Unknown

No

Lead Free

SQ2309ES-T1_GE3 vs SQ2319ES-T1-GE3