Vishay Siliconix SQ2308CES-T1_GE3

Name: SQ2308CES-T1_GE3
Brand: Vishay Siliconix
SKU: 2479757-SQ2308CES-T1_GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SQ2308CES-T1_GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2479757-SQ2308CES-T1_GE3

Description:: MOSFET N-CH 60V 2.3A

ECAD Model:

Datasheet:: SQ2308CES-T1_GE3

Specifications

Vishay Siliconix SQ2308CES-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQ2308CES-T1_GE3.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchFET®
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
2W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
4 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
150m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
205pF @ 30V
Current - Continuous Drain (Id) @ 25°C
2.3A Tc
Gate Charge (Qg) (Max) @ Vgs
5.3nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
12 ns
Continuous Drain Current (ID)
2.3A
Threshold Voltage
2V
JEDEC-95 Code
TO-236AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Max Junction Temperature (Tj)
175°C
Height
1.12mm
RoHS Status
ROHS3 Compliant

Description

SQ2308CES-T1_GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 205pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 12 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SQ2308CES-T1_GE3 Features
a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12 ns
a threshold voltage of 2V

SQ2308CES-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQ2308CES-T1_GE3 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

SQ2308CES-T1_GE3 More Descriptions

SQ2308CES Series 60 V 150 mOhm Surface Mount N-Channel Mosfet - SOT-23-3
Trans MOSFET N-CH 60V 2.3A Automotive AEC-Q101 3-Pin SOT-23 T/R
N-Channel 60-V (D-S) 175C Mosfet Rohs Compliant: No |Vishay SQ2308CES-T1_GE3
MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 2.3A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.3A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)

Product Comparison

The three parts on the right have similar specifications to SQ2308CES-T1_GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Number of Channels

Power Dissipation-Max

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

RoHS Status

Contact Plating

Mount

Number of Pins

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

REACH SVHC

Pbfree Code

Max Operating Temperature

Min Operating Temperature

Subcategory

Max Power Dissipation

Base Part Number

Pin Count

Element Configuration

Transistor Application

Drain-source On Resistance-Max

Radiation Hardening

Lead Free

View Compare
SQ2308CES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2016

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

R-PDSO-G3

1

SINGLE WITH BUILT-IN DIODE

1

2W Tc

ENHANCEMENT MODE

2W

4 ns

N-Channel

150m Ω @ 2.3A, 10V

2.5V @ 250μA

205pF @ 30V

2.3A Tc

5.3nC @ 10V

4.5V 10V

±20V

12 ns

2.3A

2V

TO-236AB

20V

60V

175°C

1.12mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SQ2318AES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2016

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

-

1

SINGLE WITH BUILT-IN DIODE

-

3W Tc

ENHANCEMENT MODE

-

7.5 ns

N-Channel

31m Ω @ 6A, 10V

2.5V @ 250μA

555pF @ 10V

8A Tc

13nC @ 10V

4.5V 10V

±20V

12 ns

8A

2V

-

20V

-

-

-

ROHS3 Compliant

Tin

Surface Mount

3

8.4ns

40V

5.7 ns

8A

40V

46 pF

No SVHC

-

-

-

-

-

-

-

-

-

-

-

-

SQ2308CES-T1_GE3 vs SQ2318AES-T1_GE3
SQ2319ES-T1-GE3

Vishay Siliconix

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

Cut Tape (CT)

TrenchFET®

2013

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

40

-

1

-

-

-

ENHANCEMENT MODE

3W

7 ns

P-Channel

75m Ω @ 3A, 10V

2.5V @ 250μA

620pF @ 25V

4.6A Tc

16nC @ 10V

-

-

25 ns

-4.6A

-2V

-

20V

-40V

-

-

ROHS3 Compliant

-

Surface Mount

3

15ns

40V

25 ns

-

-

-

Unknown

yes

175°C

-55°C

Other Transistors

3W

SQ2319

3

Single

SWITCHING

0.082Ohm

No

Lead Free

SQ2308CES-T1_GE3 vs SQ2319ES-T1-GE3
SQ2389ES-T1_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2017

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

-

1

SINGLE WITH BUILT-IN DIODE

1

3W Tc

ENHANCEMENT MODE

3W

7 ns

P-Channel

94m Ω @ 10A, 10V

2.5V @ 250μA

420pF @ 20V

4.1A Tc

12nC @ 10V

4.5V 10V

±20V

16 ns

-4.1A

2V

-

20V

-40V

175°C

1.12mm

ROHS3 Compliant

-

Surface Mount

3

12ns

40V

4 ns

-

-

54 pF

No SVHC

-

-

-

-

-

-

-

-

-

-

-

-

SQ2308CES-T1_GE3 vs SQ2389ES-T1_GE3