Infineon Technologies SPP03N60S5HKSA1

SPP03N60S5HKSA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 420pF @ 25V.This device has a continuous drain current (ID) of [3.2A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 40 ns.A maximum pulsed drain current of 5.7A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 35 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

SPP03N60S5HKSA1 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3.2A
the turn-off delay time is 40 ns
based on its rated peak drain current 5.7A.
a 600V drain to source voltage (Vdss)


SPP03N60S5HKSA1 Applications
There are a lot of Infineon Technologies
SPP03N60S5HKSA1 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit