Infineon Technologies SPN02N60S5

SPN02N60S5 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 250pF @ 25V.This device conducts a continuous drain current (ID) of 400mA, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.4A.When the device is turned off, a turn-off delay time of 110 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 2.2A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 3.5V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

SPN02N60S5 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 400mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 2.2A.


SPN02N60S5 Applications
There are a lot of Infineon Technologies
SPN02N60S5 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching