Vishay Siliconix SI7380ADP-T1-E3
- Part Number:
- SI7380ADP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2490875-SI7380ADP-T1-E3
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Datasheet:
- SI7380ADP
Vishay Siliconix SI7380ADP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7380ADP-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance3mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max5.4W Ta 83W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id1.6V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7785pF @ 15V
- Current - Continuous Drain (Id) @ 25°C40A Tc
- Gate Charge (Qg) (Max) @ Vgs185nC @ 10V
- Rise Time13ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±12V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time155 ns
- Continuous Drain Current (ID)40A
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)70A
- Nominal Vgs600 mV
- Height1.04mm
- Length4.9mm
- Width5.89mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7380ADP-T1-E3 Overview
A device's maximum input capacitance is 7785pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Its maximum pulsed drain current is 70A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI7380ADP-T1-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 155 ns
based on its rated peak drain current 70A.
SI7380ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7380ADP-T1-E3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 7785pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Its maximum pulsed drain current is 70A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI7380ADP-T1-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 155 ns
based on its rated peak drain current 70A.
SI7380ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7380ADP-T1-E3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SI7380ADP-T1-E3 More Descriptions
Trans MOSFET N-CH 30V 31A 8-Pin PowerPAK SO T/R
MOSFET 30V 40A 83W 3.0mohm @ 10V
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:40A; On Resistance, Rds(on):0.003ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
MOSFET 30V 40A 83W 3.0mohm @ 10V
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:40A; On Resistance, Rds(on):0.003ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI7380ADP-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-30 CodePower DissipationThreshold VoltageDrain-source On Resistance-MaxFactory Lead TimeContact PlatingDrain Current-Max (Abs) (ID)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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SI7380ADP-T1-E3Surface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesObsolete1 (Unlimited)8EAR993mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260308115.4W Ta 83W TcSingleENHANCEMENT MODEDRAIN17 nsN-ChannelSWITCHING3m Ω @ 20A, 10V1.6V @ 250μA7785pF @ 15V40A Tc185nC @ 10V13ns4.5V 10V±12V35 ns155 ns40A12V30V70A600 mV1.04mm4.9mm5.89mmUnknownNoROHS3 CompliantLead Free---------------
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Surface MountSurface MountPowerPAK® SO-88-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3yesObsolete1 (Unlimited)5EAR99-Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND2604081-1.7W TaSingleENHANCEMENT MODEDRAIN21 nsN-ChannelSWITCHING5.5m Ω @ 20A, 10V3V @ 250μA-13A Ta25nC @ 4.5V16ns4.5V 10V±20V16 ns58 ns20A20V20V50A----UnknownNoROHS3 Compliant-R-XDSO-C51.7W3V0.0055Ohm----------
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Surface MountSurface MountPowerPAK® 1212-88-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)5EAR99--FET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260408111.5W TaSingleENHANCEMENT MODEDRAIN8 nsN-ChannelSWITCHING19.5m Ω @ 10A, 10V1.8V @ 250μA-6.5A Ta13nC @ 5V12ns4.5V 10V±25V12 ns32 ns10A25V30V40A1.8 V1.04mm3.3mm3.3mm-NoROHS3 Compliant-S-XDSO-C51.5W--14 WeeksTin6.5A-------
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Surface MountSurface MountPowerPAK® SO-8-506.605978mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2013--Obsolete1 (Unlimited)--4.2mOhm--MOSFET (Metal Oxide)------11.9W TaSingle--21 nsN-Channel-4.2mOhm @ 23A, 10V3V @ 250μA4650pF @ 15V14A Ta40nC @ 4.5V10ns4.5V 10V±20V27 ns83 ns14A20V---1.04mm4.9mm5.89mm--ROHS3 Compliant--------PowerPAK® SO-8150°C-55°C30V4.65nF4.2mOhm4.2 mΩ
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