SI7380ADP-T1-E3

Vishay Siliconix SI7380ADP-T1-E3

Part Number:
SI7380ADP-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2490875-SI7380ADP-T1-E3
Description:
MOSFET N-CH 30V 40A PPAK SO-8
ECAD Model:
Datasheet:
SI7380ADP

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Specifications
Vishay Siliconix SI7380ADP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7380ADP-T1-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2015
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    3mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    5.4W Ta 83W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    1.6V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7785pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    185nC @ 10V
  • Rise Time
    13ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    155 ns
  • Continuous Drain Current (ID)
    40A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    70A
  • Nominal Vgs
    600 mV
  • Height
    1.04mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7380ADP-T1-E3 Overview
A device's maximum input capacitance is 7785pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Its maximum pulsed drain current is 70A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SI7380ADP-T1-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 155 ns
based on its rated peak drain current 70A.


SI7380ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7380ADP-T1-E3 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SI7380ADP-T1-E3 More Descriptions
Trans MOSFET N-CH 30V 31A 8-Pin PowerPAK SO T/R
MOSFET 30V 40A 83W 3.0mohm @ 10V
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:40A; On Resistance, Rds(on):0.003ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SI7380ADP-T1-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    JESD-30 Code
    Power Dissipation
    Threshold Voltage
    Drain-source On Resistance-Max
    Factory Lead Time
    Contact Plating
    Drain Current-Max (Abs) (ID)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI7380ADP-T1-E3
    SI7380ADP-T1-E3
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    3mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    1
    1
    5.4W Ta 83W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    3m Ω @ 20A, 10V
    1.6V @ 250μA
    7785pF @ 15V
    40A Tc
    185nC @ 10V
    13ns
    4.5V 10V
    ±12V
    35 ns
    155 ns
    40A
    12V
    30V
    70A
    600 mV
    1.04mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7366DP-T1-GE3
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    1
    -
    1.7W Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    21 ns
    N-Channel
    SWITCHING
    5.5m Ω @ 20A, 10V
    3V @ 250μA
    -
    13A Ta
    25nC @ 4.5V
    16ns
    4.5V 10V
    ±20V
    16 ns
    58 ns
    20A
    20V
    20V
    50A
    -
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    -
    R-XDSO-C5
    1.7W
    3V
    0.0055Ohm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7326DN-T1-GE3
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    1
    1
    1.5W Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    19.5m Ω @ 10A, 10V
    1.8V @ 250μA
    -
    6.5A Ta
    13nC @ 5V
    12ns
    4.5V 10V
    ±25V
    12 ns
    32 ns
    10A
    25V
    30V
    40A
    1.8 V
    1.04mm
    3.3mm
    3.3mm
    -
    No
    ROHS3 Compliant
    -
    S-XDSO-C5
    1.5W
    -
    -
    14 Weeks
    Tin
    6.5A
    -
    -
    -
    -
    -
    -
    -
  • SI7358ADP-T1-GE3
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    -
    506.605978mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    4.2mOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    1.9W Ta
    Single
    -
    -
    21 ns
    N-Channel
    -
    4.2mOhm @ 23A, 10V
    3V @ 250μA
    4650pF @ 15V
    14A Ta
    40nC @ 4.5V
    10ns
    4.5V 10V
    ±20V
    27 ns
    83 ns
    14A
    20V
    -
    -
    -
    1.04mm
    4.9mm
    5.89mm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    PowerPAK® SO-8
    150°C
    -55°C
    30V
    4.65nF
    4.2mOhm
    4.2 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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