Vishay Siliconix SI1302DL-T1-E3

SI1302DL-T1-E3 Overview
This device conducts a continuous drain current (ID) of 640mA, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.6A.When the device is turned off, a turn-off delay time of 8 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SI1302DL-T1-E3 Features
a continuous drain current (ID) of 640mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 8 ns
a threshold voltage of 1V


SI1302DL-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1302DL-T1-E3 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching