Vishay Siliconix SI1305DL-T1-E3
- Part Number:
- SI1305DL-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3071254-SI1305DL-T1-E3
- Description:
- MOSFET P-CH 8V 0.86A SOT323-3
- Datasheet:
- SI1305DL-T1-E3
Vishay Siliconix SI1305DL-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI1305DL-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Supplier Device PackageSC-70-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2015
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance280mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max290mW Ta
- Element ConfigurationSingle
- Power Dissipation340mW
- Turn On Delay Time8 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs280mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id450mV @ 250μA (Min)
- Current - Continuous Drain (Id) @ 25°C860mA Ta
- Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
- Rise Time55ns
- Drain to Source Voltage (Vdss)8V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)55 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)-920mA
- Threshold Voltage-450mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-8V
- Drain to Source Resistance530mOhm
- Rds On Max280 mΩ
- Nominal Vgs-450 mV
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI1305DL-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -8V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -8V.As a result of its turn-off delay time, which is 17 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 530mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -450mV.The transistor must receive a 8V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
SI1305DL-T1-E3 Features
a continuous drain current (ID) of -920mA
a drain-to-source breakdown voltage of -8V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 530mOhm
a threshold voltage of -450mV
a 8V drain to source voltage (Vdss)
SI1305DL-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1305DL-T1-E3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -8V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -8V.As a result of its turn-off delay time, which is 17 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 530mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -450mV.The transistor must receive a 8V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
SI1305DL-T1-E3 Features
a continuous drain current (ID) of -920mA
a drain-to-source breakdown voltage of -8V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 530mOhm
a threshold voltage of -450mV
a 8V drain to source voltage (Vdss)
SI1305DL-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1305DL-T1-E3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI1305DL-T1-E3 More Descriptions
Trans MOSFET P-CH 8V 0.86A 3-Pin SOT-323 T/R
P-CH MOSFET SC-70-3 (SOT-323) 8V 280MOHM @ 4.5VMOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-8V; Continuous Drain Current, Id:-0.92A; On Resistance, Rds(on):0.28ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:3-SC-70 ;RoHS Compliant: Yes
P-CH MOSFET SC-70-3 (SOT-323) 8V 280MOHM @ 4.5V
The three parts on the right have similar specifications to SI1305DL-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDrain to Source ResistanceRds On MaxNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationOperating ModeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinInput Capacitance (Ciss) (Max) @ VdsView Compare
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SI1305DL-T1-E3Surface MountSurface MountSC-70, SOT-3233SC-70-3-55°C~150°C TJTape & Reel (TR)TrenchFET®2015Obsolete1 (Unlimited)280mOhm150°C-55°CMOSFET (Metal Oxide)1290mW TaSingle340mW8 nsP-Channel280mOhm @ 1A, 4.5V450mV @ 250μA (Min)860mA Ta4nC @ 4.5V55ns8V1.8V 4.5V±8V55 ns17 ns-920mA-450mV8V-8V530mOhm280 mΩ-450 mVUnknownNoROHS3 CompliantLead Free------------------------
-
-Surface MountSC-70, SOT-323---55°C~150°C TJTape & Reel (TR)-2010Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1290mW Ta---P-Channel290m Ω @ 1A, 4.5V450mV @ 250μA (Min)850mA Ta5nC @ 4.5V-12V1.8V 4.5V±8V-----------ROHS3 Compliant-YESSILICONe3yes3EAR99PURE MATTE TINESD PROTECTIONOther TransistorsDUALGULL WING260unknown303R-PDSO-G3Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODE0.85A0.29Ohm12V-
-
Surface MountSurface MountSC-70, SOT-3233--55°C~150°C TJCut Tape (CT)TrenchFET®2015Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1290mW Ta-290mW8 nsP-Channel280m Ω @ 1A, 4.5V450mV @ 250μA (Min)860mA Ta4nC @ 4.5V55ns---12 ns17 ns860mA-8V-----NoROHS3 CompliantLead Free-SILICONe3yes3EAR99PURE MATTE TIN-Other TransistorsDUALGULL WING260-303--SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE0.86A0.28Ohm8V-
-
Surface MountSurface MountSC-70, SOT-3233--55°C~150°C TJTape & Reel (TR)TrenchFET®2012Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1340mW Ta 370mW Tc-340mW10 nsN-Channel270m Ω @ 900mA, 4.5V1.3V @ 250μA900mA Tc2.7nC @ 4.5V30ns30V2.5V 4.5V±12V10 ns5 ns850mA-12V-----NoROHS3 Compliant--SILICONe3yes3EAR99PURE MATTE TIN-FET General Purpose PowersDUALGULL WING260-303--SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE0.85A0.27Ohm-100pF @ 15V
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