Vishay Siliconix SI1070X-T1-E3

SI1070X-T1-E3 Overview
The maximum input capacitance of this device is 385pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.2A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 14 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 99mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.

SI1070X-T1-E3 Features
a continuous drain current (ID) of 1.2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 99mOhm
a 30V drain to source voltage (Vdss)


SI1070X-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1070X-T1-E3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,