Vishay Siliconix SI1032X-T1-E3

SI1032X-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 5Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 50 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 6VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4.5V).

SI1032X-T1-E3 Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 5Ohm
a 20V drain to source voltage (Vdss)


SI1032X-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1032X-T1-E3 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.