Fairchild/ON Semiconductor SFR9024TM
- Part Number:
- SFR9024TM
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3071257-SFR9024TM
- Description:
- MOSFET P-CH 60V 7.8A DPAK
- Datasheet:
- SFR9024TM
Fairchild/ON Semiconductor SFR9024TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SFR9024TM.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta 32W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs280m Ω @ 3.9A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.8A Tc
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Drain Current-Max (Abs) (ID)7.8A
- Drain-source On Resistance-Max0.28Ohm
- Pulsed Drain Current-Max (IDM)31A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)104 mJ
- RoHS StatusROHS3 Compliant
SFR9024TM Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 104 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 600pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 7.8A.A maximum pulsed drain current of 31A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
SFR9024TM Features
the avalanche energy rating (Eas) is 104 mJ
based on its rated peak drain current 31A.
a 60V drain to source voltage (Vdss)
SFR9024TM Applications
There are a lot of Rochester Electronics, LLC
SFR9024TM applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 104 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 600pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 7.8A.A maximum pulsed drain current of 31A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
SFR9024TM Features
the avalanche energy rating (Eas) is 104 mJ
based on its rated peak drain current 31A.
a 60V drain to source voltage (Vdss)
SFR9024TM Applications
There are a lot of Rochester Electronics, LLC
SFR9024TM applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SFR9024TM More Descriptions
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 7.8A Tc 7.8A 2.5W 20ns
Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P, 60V, 7.8A; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.8A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 32W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: -60V; Voltage Vgs Rds on Measurement: -10V
Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P, 60V, 7.8A; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.8A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 32W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: -60V; Voltage Vgs Rds on Measurement: -10V
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