Renesas Electronics America RJH60V3BDPE-00#J3
- Part Number:
- RJH60V3BDPE-00#J3
- Manufacturer:
- Renesas Electronics America
- Ventron No:
- 3554835-RJH60V3BDPE-00#J3
- Description:
- IGBT 600V 35A 113W LDPAK
- Datasheet:
- RJH60V3BDPE-00#J3
Renesas Electronics America RJH60V3BDPE-00#J3 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America RJH60V3BDPE-00#J3.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-83
- Number of Pins83
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation113W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberRJH60V
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max113W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.2V
- Max Collector Current35A
- Reverse Recovery Time25 ns
- Collector Emitter Breakdown Voltage600V
- Max Breakdown Voltage600V
- Turn On Time60 ns
- Test Condition300V, 17A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 17A
- Turn Off Time-Nom (toff)165 ns
- IGBT TypeTrench
- Gate Charge60nC
- Td (on/off) @ 25°C40ns/90ns
- Switching Energy90μJ (on), 300μJ (off)
- Gate-Emitter Voltage-Max30V
- RoHS StatusROHS3 Compliant
RJH60V3BDPE-00#J3 Overview
This product is manufactured by Renesas Electronics America and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RJH60V3BDPE-00#J3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RJH60V3BDPE-00#J3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Renesas Electronics America and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RJH60V3BDPE-00#J3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RJH60V3BDPE-00#J3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RJH60V3BDPE-00#J3 More Descriptions
Trans IGBT Chip N-CH 600V 35A 4-Pin LDPAK(S)-(1) T/R
IGBT 600V 35A 113W LDPAK
IGBT for Inverter Applications
IGBT Transistors IGBT
IGBT 600V 35A 113W LDPAK
IGBT for Inverter Applications
IGBT Transistors IGBT
The three parts on the right have similar specifications to RJH60V3BDPE-00#J3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeTd (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxRoHS StatusView Compare
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RJH60V3BDPE-00#J316 WeeksSurface MountSurface MountSC-8383SILICON150°C TJTape & Reel (TR)2012Obsolete1 (Unlimited)2EAR99Insulated Gate BIP Transistors113WGULL WINGNOT SPECIFIEDNOT SPECIFIEDRJH60V4R-PSSO-G21SingleCOLLECTORStandard113WPOWER CONTROLN-CHANNEL2.2V35A25 ns600V600V60 ns300V, 17A, 5 Ω, 15V2.2V @ 15V, 17A165 nsTrench60nC40ns/90ns90μJ (on), 300μJ (off)30VROHS3 Compliant-
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16 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-150°C TJTape & Reel (TR)-Last Time Buy1 (Unlimited)-EAR99Insulated Gate BIP Transistors29.4W-NOT SPECIFIEDNOT SPECIFIED-4--Single-Standard29.4W-N-CHANNEL2.3V10A100 ns600V--300V, 5A, 5 Ω, 15V2.3V @ 15V, 5A-Trench11nC30ns/40ns130μJ (on), 70μJ (off)-ROHS3 Compliant
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16 WeeksSurface MountSurface MountSC-8383-150°C TJCut Tape (CT)2012Obsolete1 (Unlimited)---52W-NOT SPECIFIEDNOT SPECIFIEDRJH60M4----Standard52W--2.4V16A100 ns600V600V-300V, 8A, 5 Ω, 15V2.4V @ 15V, 8A-Trench20.5nC30ns/55ns80μJ (on), 90μJ (off)-ROHS3 Compliant
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16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack--150°C TJTube2012Active1 (Unlimited)-EAR99Insulated Gate BIP Transistors30W-NOT SPECIFIEDNOT SPECIFIEDRJH60M3----Standard30W-N-CHANNEL2.4V16A75 ns600V--300V, 8A, 5 Ω, 15V2.4V @ 15V, 8A-Trench20.5nC30ns/55ns80μJ (on), 90μJ (off)30VROHS3 Compliant
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