Renesas Electronics America RJH65D27BDPQ-A0#T0

Name: RJH65D27BDPQ-A0#T0
Brand: Renesas Electronics America
SKU: 3587495-RJH65D27BDPQ-A0#T0
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: RJH65D27BDPQ-A0#T0

Manufacturer:: Renesas Electronics America

Ventron No:: 3587495-RJH65D27BDPQ-A0#T0

Description:: IGBT 650V

ECAD Model:

Datasheet:: RJH65D27BDPQ-A0#T0

Specifications

Renesas Electronics America RJH65D27BDPQ-A0#T0 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America RJH65D27BDPQ-A0#T0.

Factory Lead Time
16 Weeks
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant

Description

RJH65D27BDPQ-A0#T0 Overview
This product is manufactured by Renesas Electronics America and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RJH65D27BDPQ-A0#T0 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RJH65D27BDPQ-A0#T0. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

RJH65D27BDPQ-A0#T0 More Descriptions

Trans IGBT Chip N-CH 650V 100A 3-Pin TO-247A Tube
OEMs, CMs ONLY (NO BROKERS)

Product Comparison

The three parts on the right have similar specifications to RJH65D27BDPQ-A0#T0.

Image

Part Number

Manufacturer

Factory Lead Time

Part Status

Moisture Sensitivity Level (MSL)

RoHS Status

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

Pbfree Code

Max Power Dissipation

Base Part Number

Pin Count

Element Configuration

Input Type

Turn On Delay Time

Power - Max

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Td (on/off) @ 25°C

Switching Energy

Radiation Hardening

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Max Breakdown Voltage

ECCN Code

Subcategory

Polarity/Channel Type

Gate-Emitter Voltage-Max

View Compare
RJH65D27BDPQ-A0#T0

Renesas Electronics America

16 Weeks

Active

1 (Unlimited)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
RJH60D6DPM-00#T1

Renesas Electronics America

16 Weeks

Active

1 (Unlimited)

ROHS3 Compliant

Through Hole

Through Hole

TO-3PFM, SC-93-3

3

150°C TJ

Tube

2012

yes

50W

RJH60D

3

Single

Standard

50 ns

50W

160 ns

2.2V

80A

100 ns

600V

300V, 40A, 5 Ω, 15V

2.2V @ 15V, 40A

Trench

104nC

50ns/160ns

850μJ (on), 600μJ (off)

No

Lead Free

-

-

-

-

-

-

-

RJH65D27BDPQ-A0#T0 vs RJH60D6DPM-00#T1
RJH60M1DPE-00#J3

Renesas Electronics America

16 Weeks

Obsolete

1 (Unlimited)

ROHS3 Compliant

Surface Mount

Surface Mount

SC-83

83

150°C TJ

Cut Tape (CT)

2012

-

52W

RJH60M

4

-

Standard

-

52W

-

2.4V

16A

100 ns

600V

300V, 8A, 5 Ω, 15V

2.4V @ 15V, 8A

Trench

20.5nC

30ns/55ns

80μJ (on), 90μJ (off)

-

-

NOT SPECIFIED

NOT SPECIFIED

600V

-

-

-

-

RJH65D27BDPQ-A0#T0 vs RJH60M1DPE-00#J3
RJH60M1DPP-M0#T2

Renesas Electronics America

16 Weeks

Active

1 (Unlimited)

ROHS3 Compliant

Through Hole

Through Hole

TO-220-3 Full Pack

-

150°C TJ

Tube

2012

-

30W

RJH60M

3

-

Standard

-

30W

-

2.4V

16A

75 ns

600V

300V, 8A, 5 Ω, 15V

2.4V @ 15V, 8A

Trench

20.5nC

30ns/55ns

80μJ (on), 90μJ (off)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

EAR99

Insulated Gate BIP Transistors

N-CHANNEL

30V

RJH65D27BDPQ-A0#T0 vs RJH60M1DPP-M0#T2