Renesas Electronics America RJH60F7ADPK-00#T0
- Part Number:
- RJH60F7ADPK-00#T0
- Manufacturer:
- Renesas Electronics America
- Ventron No:
- 3587238-RJH60F7ADPK-00#T0
- Description:
- IGBT 600V 90A 328.9W TO-3P
- ECAD Model:
-
- Datasheet:
- RJH60F7ADPK-00#T0
Renesas Electronics America RJH60F7ADPK-00#T0 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America RJH60F7ADPK-00#T0.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Operating Temperature150°C TJ
- PackagingTube
- Published2011
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation328.9W
- Base Part NumberRJH60F
- Pin Count4
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max328.9W
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current90A
- Reverse Recovery Time140 ns
- Collector Emitter Breakdown Voltage600V
- Test Condition400V, 30A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.75V @ 15V, 50A
- IGBT TypeTrench
- Td (on/off) @ 25°C63ns/142ns
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
RJH60F7ADPK-00#T0 Description
RJH60F7ADPK-00#T0 developed by Renesas Electronics America is a type of Silicon N Channel IGBT with a built-in fast recovery diode in one package. It is specifically designed based on a Trench gate and thin wafer technology. It is characterized by high-speed power switching, VCE(sat) = 1.35 V typ., and a low collector-to-emitter saturation voltage.
RJH60F7ADPK-00#T0 Features
Collector to emitter voltage: 600 V Gate to emitter voltage: ±30 V Low collector to the emitter saturation voltage Built-in fast recovery diode in one package
RJH60F7ADPK-00#T0 Applications
Industrial applications Home appliances Electronics applications
RJH60F7ADPK-00#T0 developed by Renesas Electronics America is a type of Silicon N Channel IGBT with a built-in fast recovery diode in one package. It is specifically designed based on a Trench gate and thin wafer technology. It is characterized by high-speed power switching, VCE(sat) = 1.35 V typ., and a low collector-to-emitter saturation voltage.
RJH60F7ADPK-00#T0 Features
Collector to emitter voltage: 600 V Gate to emitter voltage: ±30 V Low collector to the emitter saturation voltage Built-in fast recovery diode in one package
RJH60F7ADPK-00#T0 Applications
Industrial applications Home appliances Electronics applications
RJH60F7ADPK-00#T0 More Descriptions
Trans IGBT Chip N-CH 600V 90A 328900mW 3-Pin(3 Tab) TO-3P Tube
RJH60 - IGBT MPU RZ/A1H 400MHZ 10MB BGA324 Q1B
IGBT 600V 90A 328.9W TO-3P
RJH60 - IGBT MPU RZ/A1H 400MHZ 10MB BGA324 Q1B
IGBT 600V 90A 328.9W TO-3P
The three parts on the right have similar specifications to RJH60F7ADPK-00#T0.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Max Power DissipationBase Part NumberPin CountElement ConfigurationInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeTd (on/off) @ 25°CRadiation HardeningRoHS StatusLead FreeMax Breakdown VoltageGate ChargeSwitching EnergyTurn On Delay TimeTurn-Off Delay TimeECCN CodeSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Polarity/Channel TypeGate-Emitter Voltage-MaxView Compare
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RJH60F7ADPK-00#T016 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-33150°C TJTube2011yesActive1 (Unlimited)328.9WRJH60F4SingleStandard328.9W600V90A140 ns600V400V, 30A, 5 Ω, 15V1.75V @ 15V, 50ATrench63ns/142nsNoROHS3 CompliantLead Free------------ -
16 WeeksSurface MountSurface MountSC-8383150°C TJDigi-Reel®2012-Obsolete1 (Unlimited)113WRJH60M4SingleStandard113W600V35A90 ns600V300V, 17A, 5 Ω, 15V2.3V @ 15V, 17ATrench38ns/90nsNoROHS3 Compliant-600V60nC290μJ (on), 290μJ (off)--------
-
16 WeeksThrough HoleThrough HoleTO-3PFM, SC-93-33150°C TJTube2012yesActive1 (Unlimited)50WRJH60D3SingleStandard50W2.2V80A100 ns600V300V, 40A, 5 Ω, 15V2.2V @ 15V, 40ATrench50ns/160nsNoROHS3 CompliantLead Free-104nC850μJ (on), 600μJ (off)50 ns160 ns------
-
16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-150°C TJTube2012-Active1 (Unlimited)30WRJH60M3-Standard30W2.4V16A75 ns600V300V, 8A, 5 Ω, 15V2.4V @ 15V, 8ATrench30ns/55ns-ROHS3 Compliant--20.5nC80μJ (on), 90μJ (off)--EAR99Insulated Gate BIP TransistorsNOT SPECIFIEDNOT SPECIFIEDN-CHANNEL30V
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