RFD3055SM

Fairchild/ON Semiconductor RFD3055SM

Part Number:
RFD3055SM
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2489519-RFD3055SM
Description:
MOSFET N-CH 60V 12A DPAK
ECAD Model:
Datasheet:
RFD3055/SM, RFP3055

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Specifications
Fairchild/ON Semiconductor RFD3055SM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor RFD3055SM.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Supplier Device Package
    TO-252AA
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2002
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    53W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    150mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 20V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
Description
RFD3055SM Overview
The maximum input capacitance of this device is 300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

RFD3055SM Features
a 60V drain to source voltage (Vdss)


RFD3055SM Applications
There are a lot of ON Semiconductor
RFD3055SM applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
RFD3055SM More Descriptions
Trans MOSFET N-CH 60V 12A 3-Pin(2 Tab) TO-252AA
MOSFETs Power MOSFET N-Ch 6V/12a/.15 Ohm
PWR MOS 60V/12A/0.150 OHM N-CH TO-252AA
N-Channel Power MOSFETs 60V 12A 0.15Ω -55~175℃ TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:12A; On Resistance, Rds(on):0.15ohm; Package/Case:TO-252; Power Dissipation, Pd:53W; Drain-Source Breakdown Voltage:60V ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to RFD3055SM.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Number of Pins
    Weight
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Recovery Time
    View Compare
  • RFD3055SM
    RFD3055SM
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    TO-252AA
    -55°C~175°C TJ
    Tube
    2002
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    53W Tc
    N-Channel
    150mOhm @ 12A, 10V
    4V @ 250μA
    300pF @ 25V
    12A Tc
    23nC @ 20V
    60V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • RFD3055LESM9A
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2002
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    38W Tc
    N-Channel
    107m Ω @ 8A, 5V
    3V @ 250μA
    350pF @ 25V
    11A Tc
    11.3nC @ 10V
    -
    5V
    ±16V
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Surface Mount
    3
    260.37mg
    SILICON
    e3
    yes
    2
    EAR99
    107mOhm
    FET General Purpose Power
    60V
    GULL WING
    11A
    R-PSSO-G2
    1
    Single
    ENHANCEMENT MODE
    38W
    DRAIN
    8 ns
    SWITCHING
    105ns
    39 ns
    22 ns
    11A
    3V
    TO-252AA
    16V
    60V
    3 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • RFD3055SM9A
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    53W Tc
    N-Channel
    150m Ω @ 12A, 10V
    4V @ 250μA
    300pF @ 25V
    12A Tc
    23nC @ 20V
    60V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    SILICON
    e0
    no
    2
    -
    -
    -
    -
    GULL WING
    -
    R-PSSO-G2
    1
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    SWITCHING
    -
    -
    -
    -
    -
    TO-252AA
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    TIN LEAD
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    12A
    0.15Ohm
    60V
    -
  • RFD3055LE
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -55°C~175°C TJ
    Tube
    2002
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    38W Tc
    N-Channel
    107m Ω @ 8A, 5V
    3V @ 250μA
    350pF @ 25V
    11A Tc
    11.3nC @ 10V
    -
    5V
    ±16V
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Through Hole
    3
    343.08mg
    SILICON
    e3
    yes
    3
    EAR99
    107mOhm
    FET General Purpose Power
    60V
    -
    11A
    -
    1
    Single
    ENHANCEMENT MODE
    38W
    DRAIN
    8 ns
    SWITCHING
    105ns
    39 ns
    22 ns
    11A
    3V
    -
    16V
    60V
    3 V
    6.3mm
    6.8mm
    2.5mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    66 ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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