Fairchild/ON Semiconductor RFD3055SM
- Part Number:
- RFD3055SM
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2489519-RFD3055SM
- Description:
- MOSFET N-CH 60V 12A DPAK
- Datasheet:
- RFD3055/SM, RFP3055
Fairchild/ON Semiconductor RFD3055SM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor RFD3055SM.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageTO-252AA
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2002
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max53W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs23nC @ 20V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
RFD3055SM Overview
The maximum input capacitance of this device is 300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
RFD3055SM Features
a 60V drain to source voltage (Vdss)
RFD3055SM Applications
There are a lot of ON Semiconductor
RFD3055SM applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
RFD3055SM Features
a 60V drain to source voltage (Vdss)
RFD3055SM Applications
There are a lot of ON Semiconductor
RFD3055SM applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
RFD3055SM More Descriptions
Trans MOSFET N-CH 60V 12A 3-Pin(2 Tab) TO-252AA
MOSFETs Power MOSFET N-Ch 6V/12a/.15 Ohm
PWR MOS 60V/12A/0.150 OHM N-CH TO-252AA
N-Channel Power MOSFETs 60V 12A 0.15Ω -55~175℃ TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:12A; On Resistance, Rds(on):0.15ohm; Package/Case:TO-252; Power Dissipation, Pd:53W; Drain-Source Breakdown Voltage:60V ;RoHS Compliant: Yes
MOSFETs Power MOSFET N-Ch 6V/12a/.15 Ohm
PWR MOS 60V/12A/0.150 OHM N-CH TO-252AA
N-Channel Power MOSFETs 60V 12A 0.15Ω -55~175℃ TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:12A; On Resistance, Rds(on):0.15ohm; Package/Case:TO-252; Power Dissipation, Pd:53W; Drain-Source Breakdown Voltage:60V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to RFD3055SM.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Lifecycle StatusFactory Lead TimeContact PlatingMountNumber of PinsWeightTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTerminal FormCurrent RatingJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRecovery TimeView Compare
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RFD3055SMSurface MountTO-252-3, DPak (2 Leads Tab), SC-63TO-252AA-55°C~175°C TJTube2002Obsolete1 (Unlimited)MOSFET (Metal Oxide)53W TcN-Channel150mOhm @ 12A, 10V4V @ 250μA300pF @ 25V12A Tc23nC @ 20V60V10V±20V-----------------------------------------------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)2002Active1 (Unlimited)MOSFET (Metal Oxide)38W TcN-Channel107m Ω @ 8A, 5V3V @ 250μA350pF @ 25V11A Tc11.3nC @ 10V-5V±16VACTIVE (Last Updated: 1 day ago)8 WeeksTinSurface Mount3260.37mgSILICONe3yes2EAR99107mOhmFET General Purpose Power60VGULL WING11AR-PSSO-G21SingleENHANCEMENT MODE38WDRAIN8 nsSWITCHING105ns39 ns22 ns11A3VTO-252AA16V60V3 V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)-Obsolete1 (Unlimited)MOSFET (Metal Oxide)53W TcN-Channel150m Ω @ 12A, 10V4V @ 250μA300pF @ 25V12A Tc23nC @ 20V60V10V±20V------SILICONe0no2----GULL WING-R-PSSO-G21-ENHANCEMENT MODE-DRAIN-SWITCHING-----TO-252AA--------ROHS3 Compliant-YESTIN LEADSINGLENOT SPECIFIEDNOT SPECIFIED3COMMERCIALSINGLE WITH BUILT-IN DIODE12A0.15Ohm60V-
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AA--55°C~175°C TJTube2002Active1 (Unlimited)MOSFET (Metal Oxide)38W TcN-Channel107m Ω @ 8A, 5V3V @ 250μA350pF @ 25V11A Tc11.3nC @ 10V-5V±16VACTIVE (Last Updated: 1 day ago)8 WeeksTinThrough Hole3343.08mgSILICONe3yes3EAR99107mOhmFET General Purpose Power60V-11A-1SingleENHANCEMENT MODE38WDRAIN8 nsSWITCHING105ns39 ns22 ns11A3V-16V60V3 V6.3mm6.8mm2.5mmNo SVHCNoROHS3 CompliantLead Free-----------66 ns
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