Fairchild/ON Semiconductor RFD3055LE

Name: RFD3055LE
Brand: Fairchild/ON Semiconductor
SKU: 2478224-RFD3055LE
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: RFD3055LE

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478224-RFD3055LE

Description:: MOSFET N-CH 60V 11A I-PAK

ECAD Model:

Datasheet:: RFD3055LE

Specifications

Fairchild/ON Semiconductor RFD3055LE technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor RFD3055LE.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Weight
343.08mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
107mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
11A
Number of Elements
1
Power Dissipation-Max
38W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
38W
Case Connection
DRAIN
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
107m Ω @ 8A, 5V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
11.3nC @ 10V
Rise Time
105ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±16V
Fall Time (Typ)
39 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
60V
Recovery Time
66 ns
Nominal Vgs
3 V
Height
6.3mm
Length
6.8mm
Width
2.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

RFD3055LE Description
RFD3055LE MOSFETs are manufactured with the most up-to-date manufacturing technology. This method, which uses feature sizes that are similar to those found in LSI circuits, allows for the most efficient use of silicon, resulting in exceptional performance. They were designed for use in switching regulators, switching converters, motor drivers, and relay drivers, among other applications. These transistors can be directly controlled from integrated circuits.

RFD3055LE Features
?Temperature Compensating Model PSPICE?
?Peak Curve vs. Pulse Width Curve (Peak Curve vs. Pulse Width Curve)
?UIS Curve of Ratio
?Related Readings
"Guidelines for Soldering Surface Mount Components to PC Boards" -TB334

RFD3055LE Applications
RFD3055LE is intended for general use and can be used in a variety of situations.

RFD3055LE More Descriptions

N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ
N-Channel 60 V 0.107 Ohm Through Hole Logic Level Power Mosfet - TO-251AA
Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 38 W
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.

Product Comparison

The three parts on the right have similar specifications to RFD3055LE.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Form

JESD-30 Code

JEDEC-95 Code

Surface Mount

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Supplier Device Package

View Compare
RFD3055LE

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

343.08mg

SILICON

-55°C~175°C TJ

Tube

2002

e3

yes

Active

1 (Unlimited)

3

EAR99

107mOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

11A

1

38W Tc

Single

ENHANCEMENT MODE

38W

DRAIN

8 ns

N-Channel

SWITCHING

107m Ω @ 8A, 5V

3V @ 250μA

350pF @ 25V

11A Tc

11.3nC @ 10V

105ns

5V

±16V

39 ns

22 ns

11A

3V

16V

60V

66 ns

3 V

6.3mm

6.8mm

2.5mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
RFD3055LESM9A

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2002

e3

yes

Active

1 (Unlimited)

2

EAR99

107mOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

11A

1

38W Tc

Single

ENHANCEMENT MODE

38W

DRAIN

8 ns

N-Channel

SWITCHING

107m Ω @ 8A, 5V

3V @ 250μA

350pF @ 25V

11A Tc

11.3nC @ 10V

105ns

5V

±16V

39 ns

22 ns

11A

3V

16V

60V

-

3 V

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

GULL WING

R-PSSO-G2

TO-252AA

-

-

-

-

-

-

-

-

-

-

-

-

-

RFD3055LE vs RFD3055LESM9A
RFD3055SM9A

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

-

e0

no

Obsolete

1 (Unlimited)

2

-

-

-

-

MOSFET (Metal Oxide)

-

1

53W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

150m Ω @ 12A, 10V

4V @ 250μA

300pF @ 25V

12A Tc

23nC @ 20V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

GULL WING

R-PSSO-G2

TO-252AA

YES

TIN LEAD

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

60V

12A

0.15Ohm

60V

-

RFD3055LE vs RFD3055SM9A
RFD3055SM

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~175°C TJ

Tube

2002

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

53W Tc

-

-

-

-

-

N-Channel

-

150mOhm @ 12A, 10V

4V @ 250μA

300pF @ 25V

12A Tc

23nC @ 20V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

60V

-

-

-

TO-252AA

RFD3055LE vs RFD3055SM