Fairchild/ON Semiconductor RFD3055LESM9A

Name: RFD3055LESM9A
Brand: Fairchild/ON Semiconductor
SKU: 2848422-RFD3055LESM9A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: RFD3055LESM9A

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848422-RFD3055LESM9A

Description:: MOSFET N-CH 60V 11A TO-252AA

ECAD Model:

Datasheet:: RFD3055LESM9A

Specifications

Fairchild/ON Semiconductor RFD3055LESM9A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor RFD3055LESM9A.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
107mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
11A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
38W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
38W
Case Connection
DRAIN
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
107m Ω @ 8A, 5V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
11.3nC @ 10V
Rise Time
105ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±16V
Fall Time (Typ)
39 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
3V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
60V
Nominal Vgs
3 V
Height
2.39mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

RFD3055LESM9A Description
RFD3055LESM9A is a 60v N-Channel Logic Level Power MOSFET. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFD3055LESM9A is designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The transistor RFD3055LESM9A can be operated directly from integrated circuits.

RFD3055LESM9A Features
11A, 60V
rDS(ON)= 0.107Ω
Temperature Compensating PSPICE? Model
Peak Current vs Pulse Width Curve
UIS Rating Curve

RFD3055LESM9A Applications
AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe
Switching regulators
Switching converters

RFD3055LESM9A More Descriptions

N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ
Transistor, N-channel, logic level, power MOSFET, 60V, 11A, 107mOhm | ON Semiconductor RFD3055LESM9A
N-Channel 60 V 0.107 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA
Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:11mA; Package/Case:3-TO-251; Operating Temperature Range:-55°C to 175°C
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.

Product Comparison

The three parts on the right have similar specifications to RFD3055LESM9A.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Supplier Device Package

Recovery Time

View Compare
RFD3055LESM9A

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2002

e3

yes

Active

1 (Unlimited)

2

EAR99

107mOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

11A

R-PSSO-G2

1

38W Tc

Single

ENHANCEMENT MODE

38W

DRAIN

8 ns

N-Channel

SWITCHING

107m Ω @ 8A, 5V

3V @ 250μA

350pF @ 25V

11A Tc

11.3nC @ 10V

105ns

5V

±16V

39 ns

22 ns

11A

3V

TO-252AA

16V

60V

3 V

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
RFD3055SM9A

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

-

e0

no

Obsolete

1 (Unlimited)

2

-

-

-

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

53W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

150m Ω @ 12A, 10V

4V @ 250μA

300pF @ 25V

12A Tc

23nC @ 20V

-

10V

±20V

-

-

-

-

TO-252AA

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

TIN LEAD

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

60V

12A

0.15Ohm

60V

-

-

RFD3055LESM9A vs RFD3055SM9A
RFD3055SM

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~175°C TJ

Tube

2002

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

53W Tc

-

-

-

-

-

N-Channel

-

150mOhm @ 12A, 10V

4V @ 250μA

300pF @ 25V

12A Tc

23nC @ 20V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

60V

-

-

-

TO-252AA

-

RFD3055LESM9A vs RFD3055SM
RFD3055LE

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

343.08mg

SILICON

-55°C~175°C TJ

Tube

2002

e3

yes

Active

1 (Unlimited)

3

EAR99

107mOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

-

11A

-

1

38W Tc

Single

ENHANCEMENT MODE

38W

DRAIN

8 ns

N-Channel

SWITCHING

107m Ω @ 8A, 5V

3V @ 250μA

350pF @ 25V

11A Tc

11.3nC @ 10V

105ns

5V

±16V

39 ns

22 ns

11A

3V

-

16V

60V

3 V

6.3mm

6.8mm

2.5mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

66 ns

RFD3055LESM9A vs RFD3055LE