RE1L002SNTL

Rohm Semiconductor RE1L002SNTL

Part Number:
RE1L002SNTL
Manufacturer:
Rohm Semiconductor
Ventron No:
2480793-RE1L002SNTL
Description:
2.5V DRIVE NCH MOSFET
ECAD Model:
Datasheet:
RE1L002SNTL

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Specifications
Rohm Semiconductor RE1L002SNTL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RE1L002SNTL.
  • Factory Lead Time
    16 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-89, SOT-490
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2012
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-F3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    150mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.4 Ω @ 250mA, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    15pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    250mA Ta
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    0.25A
  • Drain-source On Resistance-Max
    3.2Ohm
  • DS Breakdown Voltage-Min
    60V
  • RoHS Status
    ROHS3 Compliant
Description
RE1L002SNTL Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 15pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 0.25A.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

RE1L002SNTL Features
a 60V drain to source voltage (Vdss)


RE1L002SNTL Applications
There are a lot of ROHM Semiconductor
RE1L002SNTL applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
RE1L002SNTL More Descriptions
RE1L002SN Series 60 V 250 mA N-Channel Small Signall Mosfet - SOT-416FL-3
Trans MOSFET N-CH 60V 0.25A 3-Pin EMTF T/R
MOSFET, N-CH, 60V, 0.25A, 0.15W; Transistor Polarity: N Channel; Continuous Drain Current Id: 250mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.3V; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-416FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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