Nexperia USA Inc. PMGD370XN,115
- Part Number:
- PMGD370XN,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2848365-PMGD370XN,115
- Description:
- MOSFET 2N-CH 30V 0.74A 6TSSOP
- ECAD Model:
-
- Datasheet:
- PMGD370XN
Nexperia USA Inc. PMGD370XN,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMGD370XN,115.
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchMOS™
- Published1997
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal FormGULL WING
- Reach Compliance Codecompliant
- Pin Count6
- JESD-30 CodeR-PDSO-G6
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power - Max410mW
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs440m Ω @ 200mA, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds37pF @ 25V
- Current - Continuous Drain (Id) @ 25°C740mA
- Gate Charge (Qg) (Max) @ Vgs0.65nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drain Current-Max (Abs) (ID)0.74A
- Drain-source On Resistance-Max0.44Ohm
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
PMGD370XN,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD370XN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD370XN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD370XN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD370XN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PMGD370XN,115 More Descriptions
Trans MOSFET N-CH 30V 0.74A 6-Pin TSSOP T/R
Small Signal Field-Effect Transistor, 0.74A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PMGD370XN - Dual N-channel TrechMOS extremely low level FET
STANDARD MARKING * REEL PACK, SMD, 7'
MOSFET Transistor Array; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current, Id:740mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):440mohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
Small Signal Field-Effect Transistor, 0.74A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PMGD370XN - Dual N-channel TrechMOS extremely low level FET
STANDARD MARKING * REEL PACK, SMD, 7'
MOSFET Transistor Array; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current, Id:740mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):440mohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to PMGD370XN,115.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTerminal FormReach Compliance CodePin CountJESD-30 CodeNumber of ElementsConfigurationOperating ModePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyFET FeatureFactory Lead TimeNumber of PinsPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power DissipationContinuous Drain Current (ID)REACH SVHCRoHS StatusView Compare
-
PMGD370XN,115Surface Mount6-TSSOP, SC-88, SOT-363YESSILICON-55°C~150°C TJTape & Reel (TR)TrenchMOS™1997e3Obsolete1 (Unlimited)6EAR99Tin (Sn)8541.29.00.75GULL WINGcompliant6R-PDSO-G62SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE410mW2 N-Channel (Dual)SWITCHING440m Ω @ 200mA, 4.5V1.5V @ 250μA37pF @ 25V740mA0.65nC @ 4.5V30V0.74A0.44Ohm30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate--------- -
Surface Mount6-TSSOP, SC-88, SOT-363YESSILICON-55°C~150°C TJTape & Reel (TR)TrenchMOS™2010e3Active1 (Unlimited)6EAR99Tin (Sn)8541.29.00.75GULL WING-6-2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE410mW2 N-Channel (Dual)SWITCHING920m Ω @ 300mA, 10V2.5V @ 250μA23pF @ 30V-1.05nC @ 10V60V0.49A0.92Ohm-METAL-OXIDE SEMICONDUCTORLogic Level Gate4 Weeks626030410mW490mANo SVHCROHS3 Compliant
-
Surface Mount6-TSSOP, SC-88, SOT-363YESSILICON-55°C~150°C TJTape & Reel (TR)TrenchMOS™1997e3Active1 (Unlimited)6EAR99Tin (Sn)8541.29.00.75GULL WING-6-2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE400mW2 N-Channel (Dual)SWITCHING340m Ω @ 200mA, 4.5V1V @ 250μA45pF @ 20V-0.89nC @ 4.5V20V0.87A0.34Ohm20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate4 Weeks6--400mW870mA-ROHS3 Compliant
-
Surface Mount6-TSSOP, SC-88, SOT-363YESSILICON-55°C~150°C TJTape & Reel (TR)TrenchMOS™1997e3Active1 (Unlimited)6EAR99Tin (Sn)8541.29.00.75GULL WING-6-2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE410mW2 N-Channel (Dual)SWITCHING350m Ω @ 200mA, 4.5V1.5V @ 250μA34pF @ 20V-0.72nC @ 4.5V20V-0.35Ohm20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate4 Weeks626030410mW860mA-ROHS3 Compliant
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
01 November 2023
Do You Know the CD4046BE CMOS Micropower Phase Locked Loop?
Ⅰ. What is a phase locked loop?Ⅱ. Overview of CD4046BEⅢ. Symbol, footprint and pin configuration of CD4046BEⅣ. What are the features of CD4046BE?Ⅴ. Technical parameters of CD4046BEⅥ. How... -
02 November 2023
MPX2010DP Pressure Sensor: Manufacturer, Pin Configuration, and Applications
Ⅰ. What is a pressure sensor?Ⅱ. Overview of MPX2010DP pressure sensorⅢ. Manufacturer of MPX2010DP pressure sensorⅣ. MPX2010DP symbol, footprint and pin configurationⅤ. Features of MPX2010DP pressure sensorⅥ. Technical... -
02 November 2023
S8050 Bipolar Transistor: Manufacturer, Specifications, S8050 vs SS8050 and More Details
Ⅰ. Introduction to S8050 transistorⅡ. Manufacturer of S8050 transistorⅢ. Specifications of S8050 transistorⅣ. Symbol, footprint and pin configuration of S8050 transistorⅤ. What are the features of S8050 transistor?Ⅵ.... -
03 November 2023
ULN2003AD Equivalents, Symbol, Working Principle and Layout Guidelines
Ⅰ. Overview of ULN2003ADⅡ. Symbol, footprint and pin configuration of ULN2003ADⅢ. Features of ULN2003ADⅣ. Technical parameters of ULN2003ADⅤ. Working principle of ULN2003ADⅥ. Layout guidelines for ULN2003ADⅦ. What are...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.