NXP USA Inc. PMGD175XN,115
- Part Number:
- PMGD175XN,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2475631-PMGD175XN,115
- Description:
- MOSFET 2N-CH 30V 0.9A 6TSSOP
- ECAD Model:
-
- Datasheet:
- PMGD175XN
NXP USA Inc. PMGD175XN,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMGD175XN,115.
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Terminal FormGULL WING
- Pin Count6
- Reference StandardIEC-60134
- JESD-30 CodeR-PDSO-G6
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power - Max390mW
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs225m Ω @ 1A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds75pF @ 15V
- Current - Continuous Drain (Id) @ 25°C900mA
- Gate Charge (Qg) (Max) @ Vgs1.1nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drain Current-Max (Abs) (ID)0.9A
- Drain-source On Resistance-Max0.225Ohm
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)0.905W
- FET FeatureLogic Level Gate
- RoHS StatusROHS3 Compliant
PMGD175XN,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD175XN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD175XN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD175XN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD175XN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PMGD175XN,115 More Descriptions
Dual MOSFET, Dual N Channel, 1 A, 30 V, 0.17 ohm, 4.5 V, 1 V
NOW NEXPERIA PMGD175XN - SMALL SIGNAL FIELD-EFFECT TRANSISTOR, SC-88
Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
STANDARD MARKING * REEL PACK, SMD, 7'
NOW NEXPERIA PMGD175XN - SMALL SIGNAL FIELD-EFFECT TRANSISTOR, SC-88
Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
STANDARD MARKING * REEL PACK, SMD, 7'
The three parts on the right have similar specifications to PMGD175XN,115.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishSubcategoryTerminal FormPin CountReference StandardJESD-30 CodeNumber of ElementsConfigurationOperating ModePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyPower Dissipation-Max (Abs)FET FeatureRoHS StatusFactory Lead TimeNumber of PinsSeriesECCN CodeHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power DissipationContinuous Drain Current (ID)REACH SVHCView Compare
-
PMGD175XN,115Surface Mount6-TSSOP, SC-88, SOT-363YESSILICON-55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)6Tin (Sn)FET General Purpose PowerGULL WING6IEC-60134R-PDSO-G62SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE390mW2 N-Channel (Dual)SWITCHING225m Ω @ 1A, 4.5V1.5V @ 250μA75pF @ 15V900mA1.1nC @ 4.5V30V0.9A0.225Ohm30VMETAL-OXIDE SEMICONDUCTOR0.905WLogic Level GateROHS3 Compliant----------- -
Surface Mount6-TSSOP, SC-88, SOT-363---55°C~150°C TJTape & Reel (TR)2012-Obsolete1 (Unlimited)----6-----390mW2 N-Channel (Dual)-145m Ω @ 1.2A, 4.5V1V @ 250μA83pF @ 10V1.2A1.3nC @ 4.5V20V-----Logic Level GateROHS3 Compliant----------
-
Surface Mount6-TSSOP, SC-88, SOT-363YESSILICON-55°C~150°C TJTape & Reel (TR)2010e3Active1 (Unlimited)6Tin (Sn)-GULL WING6--2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE410mW2 N-Channel (Dual)SWITCHING920m Ω @ 300mA, 10V2.5V @ 250μA23pF @ 30V-1.05nC @ 10V60V0.49A0.92Ohm-METAL-OXIDE SEMICONDUCTOR-Logic Level GateROHS3 Compliant4 Weeks6TrenchMOS™EAR998541.29.00.7526030410mW490mANo SVHC
-
Surface Mount6-TSSOP, SC-88, SOT-363YESSILICON-55°C~150°C TJTape & Reel (TR)1997e3Active1 (Unlimited)6Tin (Sn)-GULL WING6--2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE410mW2 N-Channel (Dual)SWITCHING350m Ω @ 200mA, 4.5V1.5V @ 250μA34pF @ 20V-0.72nC @ 4.5V20V-0.35Ohm20VMETAL-OXIDE SEMICONDUCTOR-Logic Level GateROHS3 Compliant4 Weeks6TrenchMOS™EAR998541.29.00.7526030410mW860mA-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 March 2024
STM32F030K6T6 Microcontroller Symbol, Characteristics, Specifications and Other Details
Ⅰ. Description of STM32F030K6T6Ⅱ. Functional characteristics of STM32F030K6T6Ⅲ. STM32F030K6T6 specificationsⅣ. Structure of STM32F030K6T6Ⅴ. STM32F030K6T6 symbol, footprint and pin configurationⅥ. STM32F030K6T6 development tools and ecosystemⅦ. Application cases of STM32F030K6T6STM32F030K6T6... -
28 March 2024
An Introduction to TPS54302DDCR Synchronous Buck Converter
Ⅰ. What is TPS54302DDCR?Ⅱ. Characteristics of TPS54302DDCRⅢ. Simplified schematic of TPS54302DDCRⅣ. What are the advantages of TPS54302DDCR?Ⅴ. Technical parameters of TPS54302DDCRⅥ. Pin configuration and functions of TPS54302DDCRⅦ. Protection... -
28 March 2024
UCC27517DBVR Gate Driver: Replacements, Advantages, Application and Package
Ⅰ. UCC27517DBVR overviewⅡ. Technical parameters of UCC27517DBVRⅢ. UCC27517DBVR's typical characteristicsⅣ. What are the advantages of UCC27517DBVR compared with other gate driver ICs?Ⅴ. What applications is the UCC27517DBVR typically... -
29 March 2024
TLP2362 Optocoupler Characteristics, Specifications, Working Principle and More
Ⅰ. Overview of TLP2362Ⅱ. Characteristics of TLP2362Ⅲ. Specifications of TLP2362Ⅳ. Recommended operating conditions of TLP2362Ⅴ. How does TLP2362 work?Ⅵ. Internal equivalent circuit of TLP2362Ⅶ. Storage and soldering of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.