Nexperia USA Inc. PMGD280UN,115
- Part Number:
- PMGD280UN,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2473244-PMGD280UN,115
- Description:
- MOSFET 2N-CH 20V 0.87A 6TSSOP
- Datasheet:
- PMGD280UN,115
Nexperia USA Inc. PMGD280UN,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMGD280UN,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchMOS™
- Published1997
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal FormGULL WING
- Pin Count6
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power Dissipation400mW
- Power - Max400mW
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs340m Ω @ 200mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds45pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs0.89nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Continuous Drain Current (ID)870mA
- Drain Current-Max (Abs) (ID)0.87A
- Drain-source On Resistance-Max0.34Ohm
- DS Breakdown Voltage-Min20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- RoHS StatusROHS3 Compliant
PMGD280UN,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD280UN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD280UN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD280UN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD280UN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PMGD280UN,115 More Descriptions
Transistor MOSFET Array Dual N-CH 20V 0.87A 6-Pin SC-88 T/RAvnet Japan
Dual N-Channel 20 V 660 mOhm 0.89 nC 0.4 W Surface Mount MOSFET - SOT-363
MOSFET, N CH, TRENCH DL, 20V, SOT363; Module Configuration:Dual; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:400mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:870mA; Package / Case:SOT-363; Power Dissipation Pd:400mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V
Dual N-Channel 20 V 660 mOhm 0.89 nC 0.4 W Surface Mount MOSFET - SOT-363
MOSFET, N CH, TRENCH DL, 20V, SOT363; Module Configuration:Dual; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:400mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:870mA; Package / Case:SOT-363; Power Dissipation Pd:400mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V
The three parts on the right have similar specifications to PMGD280UN,115.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTerminal FormPin CountNumber of ElementsConfigurationOperating ModePower DissipationPower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyFET FeatureRoHS StatusSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusCurrent - Continuous Drain (Id) @ 25°CPower Dissipation-Max (Abs)REACH SVHCView Compare
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PMGD280UN,1154 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6SILICON-55°C~150°C TJTape & Reel (TR)TrenchMOS™1997e3Active1 (Unlimited)6EAR99Tin (Sn)8541.29.00.75GULL WING62SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE400mW400mW2 N-Channel (Dual)SWITCHING340m Ω @ 200mA, 4.5V1V @ 250μA45pF @ 20V0.89nC @ 4.5V20V870mA0.87A0.34Ohm20VMETAL-OXIDE SEMICONDUCTORLogic Level GateROHS3 Compliant---------
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-Surface Mount6-TSSOP, SC-88, SOT-363YES-SILICON-55°C~150°C TJTape & Reel (TR)TrenchMOS™1997e3Obsolete1 (Unlimited)6EAR99Tin (Sn)8541.29.00.75GULL WING62SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE-410mW2 N-Channel (Dual)SWITCHING480m Ω @ 200mA, 4.5V1V @ 250μA43pF @ 25V0.89nC @ 4.5V30V-0.71A0.48Ohm30VMETAL-OXIDE SEMICONDUCTORLogic Level GateROHS3 CompliantFET General Purpose PowerNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G6Not Qualified710mA0.41W-
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4 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6SILICON-55°C~150°C TJTape & Reel (TR)TrenchMOS™2010e3Active1 (Unlimited)6EAR99Tin (Sn)8541.29.00.75GULL WING62SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE410mW410mW2 N-Channel (Dual)SWITCHING920m Ω @ 300mA, 10V2.5V @ 250μA23pF @ 30V1.05nC @ 10V60V490mA0.49A0.92Ohm-METAL-OXIDE SEMICONDUCTORLogic Level GateROHS3 Compliant-26030----No SVHC
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4 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6SILICON-55°C~150°C TJTape & Reel (TR)TrenchMOS™1997e3Active1 (Unlimited)6EAR99Tin (Sn)8541.29.00.75GULL WING62SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE410mW410mW2 N-Channel (Dual)SWITCHING350m Ω @ 200mA, 4.5V1.5V @ 250μA34pF @ 20V0.72nC @ 4.5V20V860mA-0.35Ohm20VMETAL-OXIDE SEMICONDUCTORLogic Level GateROHS3 Compliant-26030-----
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