PMGD280UN,115

Nexperia USA Inc. PMGD280UN,115

Part Number:
PMGD280UN,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2473244-PMGD280UN,115
Description:
MOSFET 2N-CH 20V 0.87A 6TSSOP
ECAD Model:
Datasheet:
PMGD280UN,115

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Specifications
Nexperia USA Inc. PMGD280UN,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMGD280UN,115.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchMOS™
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.75
  • Terminal Form
    GULL WING
  • Pin Count
    6
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    400mW
  • Power - Max
    400mW
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    340m Ω @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    45pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    0.89nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Continuous Drain Current (ID)
    870mA
  • Drain Current-Max (Abs) (ID)
    0.87A
  • Drain-source On Resistance-Max
    0.34Ohm
  • DS Breakdown Voltage-Min
    20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • RoHS Status
    ROHS3 Compliant
Description
PMGD280UN,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD280UN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD280UN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PMGD280UN,115 More Descriptions
Transistor MOSFET Array Dual N-CH 20V 0.87A 6-Pin SC-88 T/RAvnet Japan
Dual N-Channel 20 V 660 mOhm 0.89 nC 0.4 W Surface Mount MOSFET - SOT-363
MOSFET, N CH, TRENCH DL, 20V, SOT363; Module Configuration:Dual; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:400mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:870mA; Package / Case:SOT-363; Power Dissipation Pd:400mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V
Product Comparison
The three parts on the right have similar specifications to PMGD280UN,115.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Terminal Form
    Pin Count
    Number of Elements
    Configuration
    Operating Mode
    Power Dissipation
    Power - Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    FET Feature
    RoHS Status
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Current - Continuous Drain (Id) @ 25°C
    Power Dissipation-Max (Abs)
    REACH SVHC
    View Compare
  • PMGD280UN,115
    PMGD280UN,115
    4 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchMOS™
    1997
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    8541.29.00.75
    GULL WING
    6
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    400mW
    400mW
    2 N-Channel (Dual)
    SWITCHING
    340m Ω @ 200mA, 4.5V
    1V @ 250μA
    45pF @ 20V
    0.89nC @ 4.5V
    20V
    870mA
    0.87A
    0.34Ohm
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PMGD400UN,115
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchMOS™
    1997
    e3
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    8541.29.00.75
    GULL WING
    6
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    -
    410mW
    2 N-Channel (Dual)
    SWITCHING
    480m Ω @ 200mA, 4.5V
    1V @ 250μA
    43pF @ 25V
    0.89nC @ 4.5V
    30V
    -
    0.71A
    0.48Ohm
    30V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    ROHS3 Compliant
    FET General Purpose Power
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G6
    Not Qualified
    710mA
    0.41W
    -
  • PMGD780SN,115
    4 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchMOS™
    2010
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    8541.29.00.75
    GULL WING
    6
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    410mW
    410mW
    2 N-Channel (Dual)
    SWITCHING
    920m Ω @ 300mA, 10V
    2.5V @ 250μA
    23pF @ 30V
    1.05nC @ 10V
    60V
    490mA
    0.49A
    0.92Ohm
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    ROHS3 Compliant
    -
    260
    30
    -
    -
    -
    -
    No SVHC
  • PMGD290XN,115
    4 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchMOS™
    1997
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    8541.29.00.75
    GULL WING
    6
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    410mW
    410mW
    2 N-Channel (Dual)
    SWITCHING
    350m Ω @ 200mA, 4.5V
    1.5V @ 250μA
    34pF @ 20V
    0.72nC @ 4.5V
    20V
    860mA
    -
    0.35Ohm
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    ROHS3 Compliant
    -
    260
    30
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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