Nexperia USA Inc. PMGD290XN,115

Name: PMGD290XN,115
Brand: Nexperia USA Inc.
SKU: 2473211-PMGD290XN,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: PMGD290XN,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2473211-PMGD290XN,115

Description:: MOSFET 2N-CH 20V 0.86A 6TSSOP

ECAD Model:

Datasheet:: PMGD290XN,115

Specifications

Nexperia USA Inc. PMGD290XN,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMGD290XN,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
Published
1997
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.75
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
6
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Power Dissipation
410mW
Power - Max
410mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
350m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
34pF @ 20V
Gate Charge (Qg) (Max) @ Vgs
0.72nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Continuous Drain Current (ID)
860mA
Drain-source On Resistance-Max
0.35Ohm
DS Breakdown Voltage-Min
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
RoHS Status
ROHS3 Compliant

Description

PMGD290XN,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD290XN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD290XN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

PMGD290XN,115 More Descriptions

Transistor MOSFET Array Dual N-CH 20V 0.86A 6-Pin SC-88 T/RAvnet Japan
NEXPERIA - PMGD290XN,115 - MOSFET ARRAY, DUAL N CHANNEL, 20V, 860MA, 6-SOT-363
Trans MOSFET N-CH 20V 0.86A 6-Pin SOT-363 T/R
20V 860mA 410mW 350m¦¸@4.5V,200mA 1.5V@250¦ÌA 2 N-Channel SOT-363 MOSFETs ROHS
Dual N-Channel 20 V 350 mOhm 0.41 W 0.72 nC Surface Mount TrenchMOS - SOT-363
PMGD290XN - Dual N-channel TrenchMOS extremely low level FET
MOSFET N-CH TRENCH DL 20V 6TSSOP
Pmgd290Xn/Sot363/Sc-88 Rohs Compliant: Yes |Nexperia PMGD290XN,115.
Small Signal Field-Effect Transistor, 0.86A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Dual N-channel uTrenchmos (tm)

Product Comparison

The three parts on the right have similar specifications to PMGD290XN,115.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Configuration

Operating Mode

Power Dissipation

Power - Max

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Continuous Drain Current (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

FET Technology

FET Feature

RoHS Status

Current - Continuous Drain (Id) @ 25°C

Drain Current-Max (Abs) (ID)

REACH SVHC

View Compare
PMGD290XN,115

Nexperia USA Inc.

4 Weeks

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchMOS™

1997

e3

Active

1 (Unlimited)

6

EAR99

Tin (Sn)

8541.29.00.75

GULL WING

260

30

6

2

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ENHANCEMENT MODE

410mW

410mW

2 N-Channel (Dual)

SWITCHING

350m Ω @ 200mA, 4.5V

1.5V @ 250μA

34pF @ 20V

0.72nC @ 4.5V

20V

860mA

0.35Ohm

20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

ROHS3 Compliant

-

-

-

-
PMGD130UN,115

NXP USA Inc.

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2012

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

6

-

-

-

-

390mW

2 N-Channel (Dual)

-

145m Ω @ 1.2A, 4.5V

1V @ 250μA

83pF @ 10V

1.3nC @ 4.5V

20V

-

-

-

-

Logic Level Gate

ROHS3 Compliant

1.2A

-

-

PMGD290XN,115 vs PMGD130UN,115
PMGD780SN,115

Nexperia USA Inc.

4 Weeks

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchMOS™

2010

e3

Active

1 (Unlimited)

6

EAR99

Tin (Sn)

8541.29.00.75

GULL WING

260

30

6

2

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ENHANCEMENT MODE

410mW

410mW

2 N-Channel (Dual)

SWITCHING

920m Ω @ 300mA, 10V

2.5V @ 250μA

23pF @ 30V

1.05nC @ 10V

60V

490mA

0.92Ohm

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

ROHS3 Compliant

-

0.49A

No SVHC

PMGD290XN,115 vs PMGD780SN,115
PMGD280UN,115

Nexperia USA Inc.

4 Weeks

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchMOS™

1997

e3

Active

1 (Unlimited)

6

EAR99

Tin (Sn)

8541.29.00.75

GULL WING

-

-

6

2

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ENHANCEMENT MODE

400mW

400mW

2 N-Channel (Dual)

SWITCHING

340m Ω @ 200mA, 4.5V

1V @ 250μA

45pF @ 20V

0.89nC @ 4.5V

20V

870mA

0.34Ohm

20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

ROHS3 Compliant

-

0.87A

-

PMGD290XN,115 vs PMGD280UN,115

Certification

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PMGD290XN,115

Nexperia USA Inc.

MOSFET 2N-CH 20V 0.86A 6TSSOP

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PMGD290XN,115 Specification

Part Number	Manufacturers	Description	Stock	Price
PMGD290XN,115 DISTI #V72:2272_06540398	Nexperia	Trans MOSFET N-CH 20V 0.86A 6-Pin TSSOP T/R	7735	1 $0.323 10 $0.2527 25 $0.2274 100 $0.1368 250 $0.1231 500 $0.1108 1000 $0.1026 3000 $0.0884 6000 $0.0795
PMGD290XN,115 DISTI #V36:1790_06540398	Nexperia	Trans MOSFET N-CH 20V 0.86A 6-Pin TSSOP T/R	0
PMGD290XN,115 DISTI #1727-3126-1-ND	Nexperia	MOSFET 2N-CH 20V 0.86A 6TSSOP RoHS: Compliant	133697	1 $0.44 10 $0.347 100 $0.2379 500 $0.16316 1000 $0.12236
PMGD290XN,115 DISTI #1727-3126-6-ND	Nexperia	MOSFET 2N-CH 20V 0.86A 6TSSOP RoHS: Compliant	133697	1 $0.44 10 $0.347 100 $0.2379 500 $0.16316 1000 $0.12236
PMGD290XN,115 DISTI #1727-3126-2-ND	Nexperia	MOSFET 2N-CH 20V 0.86A 6TSSOP RoHS: Compliant	132000	3000 $0.1089 6000 $0.1023 15000 $0.0957 30000 $0.08778 75000 $0.08448
PMGD290XN,115 DISTI #31919796	Nexperia	Trans MOSFET N-CH 20V 0.86A 6-Pin TSSOP T/R	7735	76 $0.2274 100 $0.1368 250 $0.1231 500 $0.1108 1000 $0.1026 3000 $0.0884 6000 $0.0795
PMGD290XN,115 DISTI #PMGD290XN,115	Nexperia	Trans MOSFET N-CH 20V 0.86A 6-Pin TSSOP T/R (Alt: RoHS: Compliant	48000	3000 $0.1399 6000 $0.1079 12000 $0.0889 18000 $0.0749 30000 $0.0699
PMGD290XN,115 DISTI #PMGD290XN,115	Nexperia	Trans MOSFET N-CH 20V 0.86A 6-Pin TSSOP T/R - Tape RoHS: Compliant	0	3000 $0.07895 6000 $0.07792 12000 $0.07595 18000 $0.07407 30000 $0.07229
PMGD290XN,115 DISTI #75R4829	Nexperia	MOSFET ARRAY, DUAL N CHANNEL, 20V, 860MA, 6-SOT-36	9000	1 $0.377 25 $0.296 50 $0.228 100 $0.16 250 $0.146 500 $0.133 1000 $0.12
PMGD290XN,115 DISTI #34R4572	Nexperia	MOSFET, N-CH, 20V, 0.86, 150DEG C, 0.41W, Transis	58445	1 $0.377 25 $0.296 50 $0.228 100 $0.16 250 $0.146 500 $0.133 1000 $0.12
PMGD290XN,115 DISTI #771-PMGD290XN-T/R	Nexperia	MOSFET N-CH TRENCH DL 20V RoHS: Compliant	32618	1 $0.34 10 $0.266 100 $0.144 1000 $0.108 3000 $0.093 9000 $0.087 24000 $0.08 45000 $0.077 99000 $0.074
PMGD290XN,115 DISTI #7258394P	Nexperia	MOSFET DUAL N-CHANNEL 20V 0.86A SOT363, RL	7020	40 $0.148 100 $0.104 200 $0.102 400 $0.1
PMGD290XN,115 DISTI #7258394	Nexperia	MOSFET DUAL N-CHANNEL 20V 0.86A SOT363, PK	1360	20 $0.221 40 $0.148 100 $0.104 200 $0.102 400 $0.1
PMGD290XN,115 DISTI #XSKDRABV0046956	Nexperia	RoHS: Compliant	30000	6000 $0.1129 30000 $0.1053
PMGD290XN,115 DISTI #1758099	Nexperia	MOSFET, N CH, TRENCH DL, 20V, SOT363	59030	5 $0.243 25 $0.234 100 $0.12 250 $0.116 500 $0.0953
PMGD290XN,115 DISTI #1758099RL	Nexperia	MOSFET, N CH, TRENCH DL, 20V, SOT363 RoHS: Compliant	0	1 $0.523 10 $0.41 100 $0.222 1000 $0.167 3000 $0.143 9000 $0.134 24000 $0.124 45000 $0.119
PMGD290XN,115 DISTI #1758099	Nexperia	MOSFET, N CH, TRENCH DL, 20V, SOT363 RoHS: Compliant	58445	1 $0.523 10 $0.41 100 $0.222 1000 $0.167 3000 $0.143 9000 $0.134 24000 $0.124 45000 $0.119

PMGD290~~(4)~~
PMGD29~~(4)~~
PMGD2~~(6)~~
PMGD~~(20)~~
PMG~~(35)~~

Nexperia USA Inc. PMGD290XN,115

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