NXP USA Inc. PMGD400UN,115
- Part Number:
- PMGD400UN,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477859-PMGD400UN,115
- Description:
- MOSFET 2N-CH 30V 0.71A 6TSSOP
- ECAD Model:
-
- Datasheet:
- PMGD400UN,115
NXP USA Inc. PMGD400UN,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMGD400UN,115.
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchMOS™
- Published1997
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count6
- JESD-30 CodeR-PDSO-G6
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power - Max410mW
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs480m Ω @ 200mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds43pF @ 25V
- Current - Continuous Drain (Id) @ 25°C710mA
- Gate Charge (Qg) (Max) @ Vgs0.89nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drain Current-Max (Abs) (ID)0.71A
- Drain-source On Resistance-Max0.48Ohm
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)0.41W
- FET FeatureLogic Level Gate
- RoHS StatusROHS3 Compliant
PMGD400UN,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD400UN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD400UN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD400UN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD400UN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PMGD400UN,115 More Descriptions
Trans MOSFET N-CH 30V 0.71A 6-Pin TSSOP T/R
Dual N-channel TrenchMOS ultra low level FET
LDO Regulator Pos 1.2V 0.15A Automotive 5-Pin TSOP T/R
STANDARD MARKING * REEL PACK, SMD, 7'
MOSFET, N CH, TRENCH DL, 30V, SOT363; Module Configuration:Dual; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:410mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:710mA; Package / Case:SOT-363; Power Dissipation Pd:410mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:30V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V
Dual N-channel TrenchMOS ultra low level FET
LDO Regulator Pos 1.2V 0.15A Automotive 5-Pin TSOP T/R
STANDARD MARKING * REEL PACK, SMD, 7'
MOSFET, N CH, TRENCH DL, 30V, SOT363; Module Configuration:Dual; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:410mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:710mA; Package / Case:SOT-363; Power Dissipation Pd:410mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:30V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V
The three parts on the right have similar specifications to PMGD400UN,115.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyPower Dissipation-Max (Abs)FET FeatureRoHS StatusReference StandardFactory Lead TimeNumber of PinsPower DissipationContinuous Drain Current (ID)View Compare
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PMGD400UN,115Surface Mount6-TSSOP, SC-88, SOT-363YESSILICON-55°C~150°C TJTape & Reel (TR)TrenchMOS™1997e3Obsolete1 (Unlimited)6EAR99Tin (Sn)8541.29.00.75FET General Purpose PowerGULL WINGNOT SPECIFIEDNOT SPECIFIED6R-PDSO-G6Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE410mW2 N-Channel (Dual)SWITCHING480m Ω @ 200mA, 4.5V1V @ 250μA43pF @ 25V710mA0.89nC @ 4.5V30V0.71A0.48Ohm30VMETAL-OXIDE SEMICONDUCTOR0.41WLogic Level GateROHS3 Compliant------ -
Surface Mount6-TSSOP, SC-88, SOT-363---55°C~150°C TJTape & Reel (TR)-2012-Obsolete1 (Unlimited)--------6-----390mW2 N-Channel (Dual)-145m Ω @ 1.2A, 4.5V1V @ 250μA83pF @ 10V1.2A1.3nC @ 4.5V20V-----Logic Level GateROHS3 Compliant-----
-
Surface Mount6-TSSOP, SC-88, SOT-363YESSILICON-55°C~150°C TJTape & Reel (TR)-2012e3Obsolete1 (Unlimited)6-Tin (Sn)-FET General Purpose PowerGULL WING--6R-PDSO-G6-2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE390mW2 N-Channel (Dual)SWITCHING225m Ω @ 1A, 4.5V1.5V @ 250μA75pF @ 15V900mA1.1nC @ 4.5V30V0.9A0.225Ohm30VMETAL-OXIDE SEMICONDUCTOR0.905WLogic Level GateROHS3 CompliantIEC-60134----
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Surface Mount6-TSSOP, SC-88, SOT-363YESSILICON-55°C~150°C TJTape & Reel (TR)TrenchMOS™1997e3Active1 (Unlimited)6EAR99Tin (Sn)8541.29.00.75-GULL WING260306--2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE410mW2 N-Channel (Dual)SWITCHING350m Ω @ 200mA, 4.5V1.5V @ 250μA34pF @ 20V-0.72nC @ 4.5V20V-0.35Ohm20VMETAL-OXIDE SEMICONDUCTOR-Logic Level GateROHS3 Compliant-4 Weeks6410mW860mA
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