NXP USA Inc. PMGD130UN,115
- Part Number:
- PMGD130UN,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2475636-PMGD130UN,115
- Description:
- MOSFET 2N-CH 20V 1.2A 6TSSOP
- ECAD Model:
-
- Datasheet:
- PMGD130UN
NXP USA Inc. PMGD130UN,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMGD130UN,115.
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Pin Count6
- Power - Max390mW
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs145m Ω @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds83pF @ 10V
- Current - Continuous Drain (Id) @ 25°C1.2A
- Gate Charge (Qg) (Max) @ Vgs1.3nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- FET FeatureLogic Level Gate
- RoHS StatusROHS3 Compliant
PMGD130UN,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD130UN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD130UN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMGD130UN,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMGD130UN,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PMGD130UN,115 More Descriptions
Trans MOSFET N-CH 20V 1.2A 6-Pin TSSOP T/R
PMGD130UN - 20 V, dual N-channel Trench MOSFET
PMGD130UN - SMALL SIGNAL, SC-88
PMGD130UN - 20 V, dual N-channel Trench MOSFET
PMGD130UN - SMALL SIGNAL, SC-88
The three parts on the right have similar specifications to PMGD130UN,115.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Pin CountPower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)FET FeatureRoHS StatusSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyPower Dissipation-Max (Abs)Reference StandardFactory Lead TimeNumber of PinsPower DissipationContinuous Drain Current (ID)View Compare
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PMGD130UN,115Surface Mount6-TSSOP, SC-88, SOT-363-55°C~150°C TJTape & Reel (TR)2012Obsolete1 (Unlimited)6390mW2 N-Channel (Dual)145m Ω @ 1.2A, 4.5V1V @ 250μA83pF @ 10V1.2A1.3nC @ 4.5V20VLogic Level GateROHS3 Compliant----------------------------- -
Surface Mount6-TSSOP, SC-88, SOT-363-55°C~150°C TJTape & Reel (TR)1997Obsolete1 (Unlimited)6410mW2 N-Channel (Dual)480m Ω @ 200mA, 4.5V1V @ 250μA43pF @ 25V710mA0.89nC @ 4.5V30VLogic Level GateROHS3 CompliantYESSILICONTrenchMOS™e36EAR99Tin (Sn)8541.29.00.75FET General Purpose PowerGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G6Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING0.71A0.48Ohm30VMETAL-OXIDE SEMICONDUCTOR0.41W-----
-
Surface Mount6-TSSOP, SC-88, SOT-363-55°C~150°C TJTape & Reel (TR)2012Obsolete1 (Unlimited)6390mW2 N-Channel (Dual)225m Ω @ 1A, 4.5V1.5V @ 250μA75pF @ 15V900mA1.1nC @ 4.5V30VLogic Level GateROHS3 CompliantYESSILICON-e36-Tin (Sn)-FET General Purpose PowerGULL WING--R-PDSO-G6-2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING0.9A0.225Ohm30VMETAL-OXIDE SEMICONDUCTOR0.905WIEC-60134----
-
Surface Mount6-TSSOP, SC-88, SOT-363-55°C~150°C TJTape & Reel (TR)1997Active1 (Unlimited)6410mW2 N-Channel (Dual)350m Ω @ 200mA, 4.5V1.5V @ 250μA34pF @ 20V-0.72nC @ 4.5V20VLogic Level GateROHS3 CompliantYESSILICONTrenchMOS™e36EAR99Tin (Sn)8541.29.00.75-GULL WING26030--2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING-0.35Ohm20VMETAL-OXIDE SEMICONDUCTOR--4 Weeks6410mW860mA
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