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PMBFJ177,215

NXP USA Inc. PMBFJ177,215

Part Number:
PMBFJ177,215
Manufacturer:
NXP USA Inc.
Ventron No:
2495701-PMBFJ177,215
Description:
JFET P-CH 30V 0.3W SOT23
ECAD Model:
Datasheet:
PMBFJ177,215

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Specifications
NXP USA Inc. PMBFJ177,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ177,215.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Subcategory
    FET General Purpose Small Signal
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MBFJ177
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    300mW
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Input Capacitance (Ciss) (Max) @ Vds
    8pF @ 10V VGS
  • Drain-source On Resistance-Max
    300Ohm
  • DS Breakdown Voltage-Min
    30V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.3W
  • Current - Drain (Idss) @ Vds (Vgs=0)
    1.5mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id
    800mV @ 10nA
  • Voltage - Breakdown (V(BR)GSS)
    30V
  • Resistance - RDS(On)
    300Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMBFJ177,215 Description
PMBFJ177,215 is a 30V P-channel silicon field-effect transistor. The NXP PMBFJ177,215 is intended for application with analog switches, choppers, commutators, etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. The Operating and Storage Temperature Range is between -65 and 150℃. And the transistor PMBFJ177,215 is in the SOT-23 package with 300mW power dissipation.

PMBFJ177,215 Features
Drain-source voltage:  30 V Gate current (d.c.): 50 mA Total power dissipation up to Tamb = 25℃ 300 mW Storage temperature range: ?65 to 150℃  Drain-source ON-resistance: 300Ω ?

PMBFJ177,215 Applications
Industrial  Medical  Enterprise systems  Enterprise projectors  Personal electronics  Tablets 
PMBFJ177,215 More Descriptions
PMBFJ174 Series 30 V 20 mA P-Ch silicon Field-effect Transistor - SOT-23-3
Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET
RF JFET, N CHANNEL, 30V, 20MA, 3-SOT-23
Trans JFET P-CH 30V 20mA Si 3-Pin TO-236AB T/R
P-Channel -30V 50mA 300mW SOT-23(SOT-23-3) MOSFET RoHS
PMBFJ177,215,TAPE7 J-FET, SOT 23, R77 STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
RF SMALL SIGNAL TRANSISTOR MOSFET
Rf Jfet, N Channel, 30V, 20Ma, 3-Sot-23; Digital Transistor Polarity:single Pnp; Collector Emitter Voltage V(Br)Ceo:-; Continuous Collector Current Ic:-; Base Input Resistor R1:-; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / R2:-Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PMBFJ177,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    Additional Feature
    JEDEC-95 Code
    Feedback Cap-Max (Crss)
    Highest Frequency Band
    View Compare
  • PMBFJ177,215
    PMBFJ177,215
    NXP USA Inc.
    8 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    FET General Purpose Small Signal
    DUAL
    GULL WING
    260
    40
    MBFJ177
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    P-Channel
    SWITCHING
    8pF @ 10V VGS
    300Ohm
    30V
    JUNCTION
    0.3W
    1.5mA @ 15V
    800mV @ 10nA
    30V
    300Ohm
    ROHS3 Compliant
    -
    -
    -
    -
    -
  • PMBFJ308,215
    PMBFJ308,215
    NXP USA Inc.
    8 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Not For New Designs
    1 (Unlimited)
    3
    -
    Tin (Sn)
    8541.21.00.75
    Other Transistors
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    -
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    AMPLIFIER
    5pF @ 10V
    -
    25V
    JUNCTION
    0.25W
    12mA @ 10V
    1V @ 1μA
    25V
    50Ohm
    ROHS3 Compliant
    LOW NOISE
    TO-236AB
    2.5 pF
    VERY HIGH FREQUENCY B
    PMBFJ177,215 vs PMBFJ308,215
  • PMBFJ113,215
    PMBFJ113,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ113
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    100Ohm
    40V
    JUNCTION
    0.3W
    2mA @ 15V
    3V @ 1μA
    40V
    100Ohm
    ROHS3 Compliant
    -
    TO-236AB
    -
    -
    PMBFJ177,215 vs PMBFJ113,215
  • PMBFJ176,215
    PMBFJ176,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    FET General Purpose Small Signal
    DUAL
    GULL WING
    260
    40
    MBFJ176
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    P-Channel
    SWITCHING
    8pF @ 10V VGS
    250Ohm
    30V
    JUNCTION
    0.3W
    2mA @ 15V
    1V @ 10nA
    30V
    250Ohm
    ROHS3 Compliant
    -
    -
    -
    -
    PMBFJ177,215 vs PMBFJ176,215
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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