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PMBF4393,215

NXP USA Inc. PMBF4393,215

Part Number:
PMBF4393,215
Manufacturer:
NXP USA Inc.
Ventron No:
2495714-PMBF4393,215
Description:
JFET N-CH 40V 250MW SOT23
ECAD Model:
Datasheet:
PMBF4391-4393

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Comments
Specifications
NXP USA Inc. PMBF4393,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBF4393,215.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN (SN)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MBF4393
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    250mW
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Input Capacitance (Ciss) (Max) @ Vds
    14pF @ 20V
  • Drain Current-Max (Abs) (ID)
    0.003A
  • Drain-source On Resistance-Max
    100Ohm
  • DS Breakdown Voltage-Min
    40V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.25W
  • Feedback Cap-Max (Crss)
    3.5 pF
  • Current - Drain (Idss) @ Vds (Vgs=0)
    5mA @ 20V
  • Voltage - Cutoff (VGS off) @ Id
    500mV @ 1nA
  • Voltage - Breakdown (V(BR)GSS)
    40V
  • Resistance - RDS(On)
    100Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMBF4393,215 Description
For use in thick and thin-film circuits, symmetrical silicon n-channel depletion type junction field-effect transistors are mounted on a plastic microminiature envelope. The transistors are designed for industrial low-power switching or chopping applications.

PMBF4393,215 Features
Limited liability and warranty
the ability to change
qualified non-automotive items

PMBF4393,215 Applications
The applications for any of these goods that are mentioned here are solely illustrative. Without additional testing or modification, NXP Semiconductors gives no guarantee that such applications will be acceptable for the intended usage.
PMBF4393,215 More Descriptions
PMBF439X Series 40 V 5 mA 100 Ohm Surface Mount N-Channel JFET - SOT-23
Transistor JFET N-CH 40V 30mA 3-Pin TO-236AB T/R
TRANSISTOR, JFET, N-CH, 40V, SOT-23
Small Signal Field-Effect Transistor, 0.003A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET
PMBF4393,215,TAPE7 FET-RFSS, SOT23, R77 LDO Regulator Pos 3.3V 0.28A 4-Pin SC-82AB T/R
STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
RF SMALL SIGNAL TRANSISTOR MOSFET
TRANSISTOR, JFET, N-CH, 40V, SOT-23; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 30mA; Power Dissipation Pd: 250mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Breakdown Voltage Vbr: 40V; Gate-Source Cutoff Voltage Vgs(off) Max: 3V; No. of Pins: 3 Pin; Transistor Case Style: SOT-23; Transistor Type: JFET; Zero Gate Voltage Drain Current Idss Max: 30mA; Zero Gate Voltage Drain Current Idss Min: 5mA
Product Comparison
The three parts on the right have similar specifications to PMBF4393,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Feedback Cap-Max (Crss)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    JEDEC-95 Code
    View Compare
  • PMBF4393,215
    PMBF4393,215
    NXP USA Inc.
    8 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN (SN)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBF4393
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    SWITCHING
    14pF @ 20V
    0.003A
    100Ohm
    40V
    JUNCTION
    0.25W
    3.5 pF
    5mA @ 20V
    500mV @ 1nA
    40V
    100Ohm
    ROHS3 Compliant
    -
    -
  • PMBF4392,215
    PMBF4392,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBF4392
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    250mW
    N-Channel
    SWITCHING
    14pF @ 20V
    0.006A
    60Ohm
    40V
    JUNCTION
    0.25W
    3.5 pF
    25mA @ 20V
    2V @ 1nA
    40V
    -
    ROHS3 Compliant
    -
    PMBF4393,215 vs PMBF4392,215
  • PMBFJ111,215
    PMBFJ111,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ111
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    -
    30Ohm
    40V
    JUNCTION
    0.3W
    -
    20mA @ 15V
    10V @ 1μA
    40V
    30Ohm
    ROHS3 Compliant
    TO-236AB
    PMBF4393,215 vs PMBFJ111,215
  • PMBFJ112,215
    PMBFJ112,215
    NXP USA Inc.
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ112
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    -
    50Ohm
    40V
    JUNCTION
    0.3W
    -
    5mA @ 15V
    5V @ 1μA
    40V
    50Ohm
    ROHS3 Compliant
    TO-236AB
    PMBF4393,215 vs PMBFJ112,215
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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