Nexperia USA Inc. PBSS9110T,215
- Part Number:
- PBSS9110T,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3068899-PBSS9110T,215
- Description:
- TRANS PNP 100V 1A SOT23
- Datasheet:
- PBSS9110T,215
Nexperia USA Inc. PBSS9110T,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS9110T,215.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- Tolerance5%
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation480mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPBSS9110
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation480mW
- Transistor ApplicationSWITCHING
- Test Current5mA
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Zener Voltage16V
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic320mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage320mV
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- hFE Min150
- Height1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBSS9110T,215 Overview
DC current gain in this device equals 150 @ 500mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 320mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 1A volts.
PBSS9110T,215 Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS9110T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 150 @ 500mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 320mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 1A volts.
PBSS9110T,215 Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS9110T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS9110T,215 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
PBSS9110T - 100 V, 1 A PNP low VCEsat transistor
Trans GP BJT PNP 100V 1A 480mW Automotive 3-Pin SOT-23 T/R
Biss Transistor, Pnp, -100V, -1A, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Nexperia PBSS9110T,215.
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 180V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 125; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: -120V
PBSS9110T - 100 V, 1 A PNP low VCEsat transistor
Trans GP BJT PNP 100V 1A 480mW Automotive 3-Pin SOT-23 T/R
Biss Transistor, Pnp, -100V, -1A, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Nexperia PBSS9110T,215.
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 180V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 125; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: -120V
The three parts on the right have similar specifications to PBSS9110T,215.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedToleranceJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationTest CurrentGain Bandwidth ProductPolarity/Channel TypeZener VoltageTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionTerminal FinishView Compare
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PBSS9110T,2154 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-334.535924gSILICON150°C TJTape & Reel (TR)20015%e3Active1 (Unlimited)3EAR99480mWDUALGULL WING260100MHz40PBSS911031Single480mWSWITCHING5mA100MHzPNP16VPNP100V1A150 @ 500mA 5V100nA320mV @ 100mA, 1A100V100MHz320mV100V120V5V1501mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------
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4 Weeks-Surface MountSurface MountSC-74, SOT-4576--150°C TJTape & Reel (TR)2007--Active1 (Unlimited)--1.1W---100MHz-PBSS301N-1Single2.5W--100MHz--NPN20V4A250 @ 2A 2V100nA420mV @ 600mA, 6A20V--20V20V5V100----NoROHS3 CompliantLead Free6-TSOP150°C-65°CNPN1.1W20V4A100MHz-
-
4 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON150°C TJCut Tape (CT)2010-e3Active1 (Unlimited)3-1.1WDUALGULL WING-150MHz-PBSS4041P31Single1.1WSWITCHING-150MHzPNP-PNP60V2.7A150 @ 1A 2V100nA360mV @ 300mA, 3A60V150MHz-60V60V5V35---No SVHCNoROHS3 CompliantLead Free---------
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4 Weeks-Surface MountSurface MountTO-243AA4--150°C TJTape & Reel (TR)2010-e3Active1 (Unlimited)--2.5W-----PBSS4032P3-Single---115MHz--PNP400mV4.2A150 @ 2A 2V100nA400mV @ 200mA, 4A30V--30V30V-5V200----NoROHS3 Compliant-----2.5W---Tin (Sn)
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