Nexperia USA Inc. PBSS5160U,115
- Part Number:
- PBSS5160U,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463539-PBSS5160U,115
- Description:
- TRANS PNP 60V 0.7A SOT323
- ECAD Model:
-
- Datasheet:
- PBSS5160U,115
Nexperia USA Inc. PBSS5160U,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS5160U,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation415mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency185MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberPBSS5160
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation415mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product185MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current700mA
- DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic340mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency220MHz
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)-5V
- hFE Min200
- Height6.35mm
- Length6.35mm
- Width6.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBSS5160U,115 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 340mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 700mA volts is possible.
PBSS5160U,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160U,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160U,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 340mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 700mA volts is possible.
PBSS5160U,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160U,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160U,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS5160U,115 More Descriptions
PBSS5160U Series PNP 415 mW 60 V 1 A SMT Small Signal Transistor - SOT-323
PBSS5160U - 60 V, 1 A PNP low VCEsat transistor
Trans GP BJT PNP 60V 1A 415mW Automotive 3-Pin SC-70 T/R
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ, ft:185MHz; Power Dissipation Pd:415mW; DC Collector Current:-1A; DC Current Gain Max (hfe):350 ;RoHS Compliant: Yes
TRANS PNP 60V 1A LOW SAT SOT323; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:-60V; Typ Gain Bandwidth ft:185MHz; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-323; SVHC:No SVHC (18-Jun-2010); Case Style:SOT-323; Max Current Ic Continuous a:-100mA; Max Voltage Vce Sat:-175mV; Min Hfe:200; Power Dissipation:250mW; Termination Type:SMD; Transistor Type:Low Saturation
PBSS5160U - 60 V, 1 A PNP low VCEsat transistor
Trans GP BJT PNP 60V 1A 415mW Automotive 3-Pin SC-70 T/R
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ, ft:185MHz; Power Dissipation Pd:415mW; DC Collector Current:-1A; DC Current Gain Max (hfe):350 ;RoHS Compliant: Yes
TRANS PNP 60V 1A LOW SAT SOT323; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:-60V; Typ Gain Bandwidth ft:185MHz; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-323; SVHC:No SVHC (18-Jun-2010); Case Style:SOT-323; Max Current Ic Continuous a:-100mA; Max Voltage Vce Sat:-175mV; Min Hfe:200; Power Dissipation:250mW; Termination Type:SMD; Transistor Type:Low Saturation
The three parts on the right have similar specifications to PBSS5160U,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeJESD-30 CodeCase ConnectionPower - MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Contact PlatingREACH SVHCView Compare
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PBSS5160U,1154 WeeksSurface MountSurface MountSC-70, SOT-32334.535924gSILICON150°C TJTape & Reel (TR)2008e3Active1 (Unlimited)3EAR99Tin (Sn)415mWDUALGULL WING260185MHz30PBSS516031Single415mWSWITCHING185MHzPNPPNP60V700mA150 @ 500mA 5V100nA340mV @ 100mA, 1A60V220MHz60V80V-5V2006.35mm6.35mm6.35mmNoROHS3 CompliantLead Free-------- -
4 WeeksSurface MountSurface MountTO-243AA4-SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)2.1W-FLAT---PBSS303P31Single-SWITCHING130MHzPNPPNP30V5.1A200 @ 2A 2V100nA ICBO230mV @ 255mA, 5.1A30V130MHz30V30V5V----NoROHS3 CompliantLead FreeR-PSSO-F3COLLECTOR2.1W320ns70ns--
-
4 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON150°C TJCut Tape (CT)2010e3Active1 (Unlimited)3--1.1WDUALGULL WING-150MHz-PBSS4041P31Single1.1WSWITCHING150MHzPNPPNP60V2.7A150 @ 1A 2V100nA360mV @ 300mA, 3A60V150MHz60V60V5V35---NoROHS3 CompliantLead Free-----TinNo SVHC
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4 WeeksSurface MountSurface MountTO-243AA4--150°C TJTape & Reel (TR)2010e3Active1 (Unlimited)--Tin (Sn)2.5W-----PBSS4032P3-Single--115MHz-PNP400mV4.2A150 @ 2A 2V100nA400mV @ 200mA, 4A30V-30V30V-5V200---NoROHS3 Compliant---2.5W----
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