Nexperia USA Inc. PBSS5140T,215
- Part Number:
- PBSS5140T,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463572-PBSS5140T,215
- Description:
- TRANS PNP 40V 1A SOT23
- Datasheet:
- PBSS5140T,215
Nexperia USA Inc. PBSS5140T,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS5140T,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberPBSS5140
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power - Max450mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)1A
- Transition Frequency150MHz
- Frequency - Transition150MHz
- RoHS StatusROHS3 Compliant
PBSS5140T,215 Overview
In this device, the DC current gain is 300 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.
PBSS5140T,215 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 150MHz
PBSS5140T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5140T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 300 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.
PBSS5140T,215 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 150MHz
PBSS5140T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5140T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS5140T,215 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
NEXPERIA - PBSS5140T,215 - Bipolární (BJT) Jeden Tranzistor, PNP, 40 V, 300 mW, 1 A, 300 hFE
PBSS5140T - 40 V, 1 A PNP low VCEsat transistor
Trans GP BJT PNP 40V 1A Automotive 3-Pin TO-236AB T/R
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ, ft:150MHz; Power Dissipation Pd:300mW; DC Collector Current:-1A; DC Current Gain Max (hfe):300 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 300hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 250V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 100µA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 150MHz; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 300; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: -40V
NEXPERIA - PBSS5140T,215 - Bipolární (BJT) Jeden Tranzistor, PNP, 40 V, 300 mW, 1 A, 300 hFE
PBSS5140T - 40 V, 1 A PNP low VCEsat transistor
Trans GP BJT PNP 40V 1A Automotive 3-Pin TO-236AB T/R
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ, ft:150MHz; Power Dissipation Pd:300mW; DC Collector Current:-1A; DC Current Gain Max (hfe):300 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 300hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 250V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 100µA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 150MHz; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 300; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: -40V
The three parts on the right have similar specifications to PBSS5140T,215.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusMountWeightTerminationMax Power DissipationFrequencyElement ConfigurationPower DissipationCase ConnectionGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeJESD-30 CodeTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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PBSS5140T,2154 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)2001e3Active1 (Unlimited)3EAR99Tin (Sn)DUALGULL WING26030PBSS514031SINGLE450mWSWITCHINGPNPPNP300 @ 100mA 5V100nA500mV @ 100mA, 1A40V1A150MHz150MHzROHS3 Compliant--------------------------
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4 WeeksSurface MountTO-261-4, TO-261AA-4SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)4EAR99Tin (Sn)DUALGULL WING--PBSS306N41-2WSWITCHINGNPNNPN100 @ 2A 2V100nA ICBO300mV @ 255mA, 5.1A--110MHz-ROHS3 CompliantSurface Mount4.535924gSMD/SMT2W110MHzSingle700mWCOLLECTOR110MHz100V5.1A100V100V100V5V2006.35mm6.35mm6.35mmNo SVHCNoLead Free---
-
4 WeeksSurface MountTO-243AA-4SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)-FLAT--PBSS303P31-2.1WSWITCHINGPNPPNP200 @ 2A 2V100nA ICBO230mV @ 255mA, 5.1A--130MHz-ROHS3 CompliantSurface Mount--2.1W-Single-COLLECTOR130MHz30V5.1A30V30V30V5V-----NoLead FreeR-PSSO-F3320ns70ns
-
4 WeeksSurface MountTO-243AA-4-150°C TJTape & Reel (TR)2010e3Active1 (Unlimited)--Tin (Sn)----PBSS4032P3--2.5W--PNP150 @ 2A 2V100nA400mV @ 200mA, 4A----ROHS3 CompliantSurface Mount--2.5W-Single--115MHz400mV4.2A30V30V30V-5V200----No----
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