PBSS5140T,215

Nexperia USA Inc. PBSS5140T,215

Part Number:
PBSS5140T,215
Manufacturer:
Nexperia USA Inc.
Ventron No:
2463572-PBSS5140T,215
Description:
TRANS PNP 40V 1A SOT23
ECAD Model:
Datasheet:
PBSS5140T,215

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Specifications
Nexperia USA Inc. PBSS5140T,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS5140T,215.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    PBSS5140
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    450mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    300 @ 100mA 5V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 100mA, 1A
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Current - Collector (Ic) (Max)
    1A
  • Transition Frequency
    150MHz
  • Frequency - Transition
    150MHz
  • RoHS Status
    ROHS3 Compliant
Description
PBSS5140T,215 Overview
In this device, the DC current gain is 300 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.

PBSS5140T,215 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 150MHz


PBSS5140T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5140T,215 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
PBSS5140T,215 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
NEXPERIA - PBSS5140T,215 - Bipolární (BJT) Jeden Tranzistor, PNP, 40 V, 300 mW, 1 A, 300 hFE
PBSS5140T - 40 V, 1 A PNP low VCEsat transistor
Trans GP BJT PNP 40V 1A Automotive 3-Pin TO-236AB T/R
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ, ft:150MHz; Power Dissipation Pd:300mW; DC Collector Current:-1A; DC Current Gain Max (hfe):300 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 300hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 250V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 100µA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 150MHz; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 300; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: -40V
Product Comparison
The three parts on the right have similar specifications to PBSS5140T,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Mount
    Weight
    Termination
    Max Power Dissipation
    Frequency
    Element Configuration
    Power Dissipation
    Case Connection
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    JESD-30 Code
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    View Compare
  • PBSS5140T,215
    PBSS5140T,215
    4 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    DUAL
    GULL WING
    260
    30
    PBSS5140
    3
    1
    SINGLE
    450mW
    SWITCHING
    PNP
    PNP
    300 @ 100mA 5V
    100nA
    500mV @ 100mA, 1A
    40V
    1A
    150MHz
    150MHz
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PBSS306NZ,135
    4 Weeks
    Surface Mount
    TO-261-4, TO-261AA
    -
    4
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    4
    EAR99
    Tin (Sn)
    DUAL
    GULL WING
    -
    -
    PBSS306N
    4
    1
    -
    2W
    SWITCHING
    NPN
    NPN
    100 @ 2A 2V
    100nA ICBO
    300mV @ 255mA, 5.1A
    -
    -
    110MHz
    -
    ROHS3 Compliant
    Surface Mount
    4.535924g
    SMD/SMT
    2W
    110MHz
    Single
    700mW
    COLLECTOR
    110MHz
    100V
    5.1A
    100V
    100V
    100V
    5V
    200
    6.35mm
    6.35mm
    6.35mm
    No SVHC
    No
    Lead Free
    -
    -
    -
  • PBSS303PX,115
    4 Weeks
    Surface Mount
    TO-243AA
    -
    4
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    -
    FLAT
    -
    -
    PBSS303P
    3
    1
    -
    2.1W
    SWITCHING
    PNP
    PNP
    200 @ 2A 2V
    100nA ICBO
    230mV @ 255mA, 5.1A
    -
    -
    130MHz
    -
    ROHS3 Compliant
    Surface Mount
    -
    -
    2.1W
    -
    Single
    -
    COLLECTOR
    130MHz
    30V
    5.1A
    30V
    30V
    30V
    5V
    -
    -
    -
    -
    -
    No
    Lead Free
    R-PSSO-F3
    320ns
    70ns
  • PBSS4032PX,115
    4 Weeks
    Surface Mount
    TO-243AA
    -
    4
    -
    150°C TJ
    Tape & Reel (TR)
    2010
    e3
    Active
    1 (Unlimited)
    -
    -
    Tin (Sn)
    -
    -
    -
    -
    PBSS4032P
    3
    -
    -
    2.5W
    -
    -
    PNP
    150 @ 2A 2V
    100nA
    400mV @ 200mA, 4A
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    -
    -
    2.5W
    -
    Single
    -
    -
    115MHz
    400mV
    4.2A
    30V
    30V
    30V
    -5V
    200
    -
    -
    -
    -
    No
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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