Nexperia USA Inc. PBSS4350T,215
- Part Number:
- PBSS4350T,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2462865-PBSS4350T,215
- Description:
- TRANS NPN 50V 2A SOT23
- ECAD Model:
-
- Datasheet:
- PBSS4350T,215
Nexperia USA Inc. PBSS4350T,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS4350T,215.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPBSS4350
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.2W
- Power - Max540mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic370mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage50V
- Transition Frequency100MHz
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min300
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBSS4350T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 370mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4350T,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4350T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4350T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 370mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4350T,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4350T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4350T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS4350T,215 More Descriptions
PBSS4350T Series 50 V 2 A SMT NPN Low VCEsat (BISS) Transistor - SOT-23
50V 540mW 2A NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
TRANS NPN 50V 2A SOT23 / Trans GP BJT NPN 50V 2A 1200mW Automotive 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:2A; DC Current Gain Max (hfe):300 ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 3A; DC Current Gain hFE: 300hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 80V; Continuous Collector Current Ic Max: 3A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 3A; Current Ic hFE: 500µA; Device Marking: SS4350T; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 300; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; SMD Marking: 1A; Voltage Vcbo: 50V
50V 540mW 2A NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
TRANS NPN 50V 2A SOT23 / Trans GP BJT NPN 50V 2A 1200mW Automotive 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:2A; DC Current Gain Max (hfe):300 ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 3A; DC Current Gain hFE: 300hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 80V; Continuous Collector Current Ic Max: 3A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 3A; Current Ic hFE: 500µA; Device Marking: SS4350T; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 300; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; SMD Marking: 1A; Voltage Vcbo: 50V
The three parts on the right have similar specifications to PBSS4350T,215.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishCurrent - Collector (Ic) (Max)Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
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PBSS4350T,2154 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-334.535924gSILICON150°C TJTape & Reel (TR)2002e3Active1 (Unlimited)3EAR99300mWDUALGULL WING260100MHz40PBSS435031Single1.2W540mWSWITCHING100MHzNPNNPN50V2A300 @ 1A 2V100nA ICBO370mV @ 300mA, 3A50V100MHz50V50V5V3006.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead Free--------- -
4 Weeks-Surface MountSurface MountSC-74, SOT-4576-SILICON150°C TJTape & Reel (TR)2007e3Active1 (Unlimited)6EAR992.5WDUALGULL WING260140MHz30PBSS303N61Single2.5W1.1WSWITCHING140MHzNPNNPN60V3A345 @ 500mA 2V100nA515mV @ 600mA, 6A60V140MHz60V60V5V----No SVHCNoROHS3 CompliantLead FreeTin (Sn)1A------
-
4 Weeks-Surface MountSurface MountSC-74, SOT-4576--150°C TJTape & Reel (TR)2007-Active1 (Unlimited)--1.1W---100MHz-PBSS301N-1Single2.5W1.1W-100MHz-NPN20V4A250 @ 2A 2V100nA420mV @ 600mA, 6A20V-20V20V5V100----NoROHS3 CompliantLead Free-4A6-TSOP150°C-65°CNPN20V100MHz
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4 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON150°C TJCut Tape (CT)2010e3Active1 (Unlimited)3-1.1WDUALGULL WING-150MHz-PBSS4041P31Single1.1W-SWITCHING150MHzPNPPNP60V2.7A150 @ 1A 2V100nA360mV @ 300mA, 3A60V150MHz60V60V5V35---No SVHCNoROHS3 CompliantLead Free--------
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