Nexperia USA Inc. PBSS4160T,215
- Part Number:
- PBSS4160T,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845371-PBSS4160T,215
- Description:
- TRANS NPN 60V 1A SOT23
- ECAD Model:
-
- Datasheet:
- PBSS4160T,215
Nexperia USA Inc. PBSS4160T,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS4160T,215.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation270mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency220MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPBSS4160
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.25W
- Power - Max400mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product220MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency220MHz
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min250
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBSS4160T,215 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 220MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
PBSS4160T,215 Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
PBSS4160T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4160T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 220MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
PBSS4160T,215 Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
PBSS4160T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4160T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS4160T,215 More Descriptions
PBSS4160T Series 60 V 1 A SMT NPN Low VCEsat (BISS) Transistor - SOT-23
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 60V 1A 1250mW Automotive 3-Pin SOT-23 T/R
60V 400mW 1A 150@1A,5V 220MHz 200mV@1A,100mA NPN 150¡æ@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ, ft:220MHz; Power Dissipation Pd:270mW; DC Collector Current:1A; DC Current Gain Max (hfe):400 ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 220MHz; Power Dissipation Pd: 270mW; DC Collector Current: 1A; DC Current Gain hFE: 400hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 110V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 150MHz; Gain Bandwidth ft Typ: 220MHz; Hfe Min: 100; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: 80V
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 60V 1A 1250mW Automotive 3-Pin SOT-23 T/R
60V 400mW 1A 150@1A,5V 220MHz 200mV@1A,100mA NPN 150¡æ@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ, ft:220MHz; Power Dissipation Pd:270mW; DC Collector Current:1A; DC Current Gain Max (hfe):400 ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 220MHz; Power Dissipation Pd: 270mW; DC Collector Current: 1A; DC Current Gain hFE: 400hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 110V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 150MHz; Gain Bandwidth ft Typ: 220MHz; Hfe Min: 100; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: 80V
The three parts on the right have similar specifications to PBSS4160T,215.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeCollector Emitter Saturation VoltageCurrent - Collector (Ic) (Max)JESD-30 CodeCase ConnectionTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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PBSS4160T,2154 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-334.535924gSILICON150°C TJTape & Reel (TR)2001e3Active1 (Unlimited)3EAR99Tin (Sn)270mWDUALGULL WING260220MHz40PBSS416031Single1.25W400mWSWITCHING220MHzNPNNPN60V1A200 @ 500mA 5V100nA250mV @ 100mA, 1A60V220MHz60V80V5V2506.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead Free------- -
8 WeeksSurface MountSurface Mount3-XFDFN3--150°C TJTape & Reel (TR)2016e3Active1 (Unlimited)--Tin (Sn)590mW-----PBSS25403-Single-250mW-450MHz-NPN40V500mA200 @ 10mA 2V100μA ICBO50mV @ 500μA, 10mA40V-40V40V6V200----NoROHS3 Compliant-250mV-----
-
4 WeeksSurface MountSurface MountSC-74, SOT-4576-SILICON150°C TJTape & Reel (TR)2007e3Active1 (Unlimited)6EAR99Tin (Sn)2.5WDUALGULL WING260140MHz30PBSS303N61Single2.5W1.1WSWITCHING140MHzNPNNPN60V3A345 @ 500mA 2V100nA515mV @ 600mA, 6A60V140MHz60V60V5V----No SVHCNoROHS3 CompliantLead Free-1A----
-
4 WeeksSurface MountSurface MountTO-243AA4-SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)2.1W-FLAT---PBSS303P31Single-2.1WSWITCHING130MHzPNPPNP30V5.1A200 @ 2A 2V100nA ICBO230mV @ 255mA, 5.1A30V130MHz30V30V5V-----NoROHS3 CompliantLead Free--R-PSSO-F3COLLECTOR320ns70ns
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